Abstract: A swimming aid device in the form of a monofi is contemplated. The swimming aid device may include first and second fins formed of a resilient material, each fin including an elongated internal space within a fin body, an opening leading to the elongated internal space, a fin blade coupled to and extending away from the elongated internal space, a first and second side heel connectors on opposing sides of the opening leading to the elongated internal space and sized and shaped to mate with each other, a fin blade connector and a fin blade connector receiver on the fin blade and sized and shaped to mate with each other, the combination of the first and second fins forming a monofin.

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract: Aspects of the present disclosure describe an attachment device for mounting a module to a substrate comprises a module leg with two ends and a module foot. One end of the module leg is configured to be attached to a bottom surface of the module and the other end of the module leg is configured to be attached to the module foot. At least a portion of the module foot is configured to be attached to the substrate. Also a portion of a surface area of the module foot is configured to be exposed outside of an area covered by the module. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract: This invention provides center locking means that are manufactured from harder materials for detachably coupling two swim fins for use by a swimmer practicing the dolphin kick. Also, the invention explains how to strengthen the center locking means to preserve longevity of use.

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract: Apparatus for controlling the thermal uniformity of a substrate are provided. The thermal uniformity of the substrate may be controlled to be more uniform or the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon; and a flow path disposed within the substrate support to flow a heat transfer fluid beneath the support surface, wherein the flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length, wherein the first portion is spaced about 2 mm to about 10 mm from the second portion, and wherein the first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract: Implementations described herein provide a magnetic ring which enables both lateral and azimuthal tuning of the plasma in a processing chamber. In one embodiment, the magnetic ring has a body. The body has a top surface and a bottom surface, and a plurality of magnets are disposed on the bottom surface of the body.

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract: A system and method for dilating a Eustachian tube of a patient is disclosed. The device includes a protective sheath, a flexible endoscope and a balloon dilation catheter. The protective sheath includes an endoscope lumen and a balloon dilation catheter lumen. The balloon of the balloon dilation catheter is a low profile balloon particularly useful for dilating the Eustachian tube, and in particular, the Eustachian tube of a pediatric patient. The method involves advancing the balloon dilation catheter through a nasal passage of the patient to dilate a portion of the Eustachian tube.

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.