Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: The current document discloses an automated method and system for inferring the logical rules underlying the configuration and versioning state of the components and subcomponents of a complex system, including data centers and other complex computational environments. The methods and systems employ a database of configuration information and construct an initial set of logical rules, or hypotheses, regarding system configuration. Then, using simulated annealing and a variant of genetic programming, the methods and systems disclosed in the current document carry out a search through the hypothesis state space for the system under several constrains in order to find one or more hypotheses that best explain the configuration and, when available, configuration history. The constraints include minimization of the complexity of the hypotheses and maximizing the accuracy by which the hypotheses predict observed configuration and configuration history.

Abstract: Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas injection assembly. The gas injection assembly includes an inlet hub, a nozzle having a plurality of injection passages disposed against the inlet hub, and a distribution insert disposed between the nozzle and the inlet hub. The distribution insert has one or more gas distribution passages configured to connect the inlet hub to the plurality of the injection passages the nozzle. Each of the one or more gas distribution passages has one inlet connecting with a plurality of outlets, and distances between the inlet and each of the plurality of outlets are substantially equal.

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one or more modules in a modular process chamber according to the present disclosure.

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract: Temperature measurement of a silicon wafer is described using the interference between reflections off surfaces of the wafer. In one example, the invention includes a silicon processing chamber, a wafer holder within the chamber to hold a silicon substrate for processing, and a laser directed to a surface of the substrate. A photodetector receives light from the laser that is reflected off the surface directly and through the substrate and a processor determines a temperature of the silicon substrate based on the received reflected light.

Abstract: The present disclosure generally relates to apparatus and methods for symmetry in electrical field, gas flow and thermal distribution in a processing chamber to achieve process uniformity. Embodiment of the present disclosure includes a plasma processing chamber having a plasma source, a substrate support assembly and a vacuum pump aligned along the same central axis to create substantially symmetrical flow paths, electrical field, and thermal distribution in the plasma processing chamber resulting in improved process uniformity and reduced skew.

Abstract: An apparatus comprises a shaft, an expandable dilator, and at least one ventilation pathway. The shaft defines a longitudinal axis and comprises a distal and proximal ends with at least one shaft lumen. The expandable dilator comprises body with its own proximal and distal ends. The body is configured to transition between a contracted state and an expanded state. The body is configured to dilate a Eustachian tube of a patient in the expanded state. The at least one ventilation pathway is configured to provide ventilation from the distal end of the body to the proximal end of the body when the body is in the expanded state. In some examples, the ventilation pathway comprises a set of transversely oriented vent openings formed through the shaft. In some other examples, the ventilation pathway comprises a space defined between one or more radially outwardly protruding features of the expandable dilator.

Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract: An exemplary semiconductor processing system may include a high-frequency electrical source that has an outlet plug. The system may include a processing chamber having a top plate, and an inlet assembly coupled with the top plate. The inlet assembly may include an electrode defining an aperture at a first end and configured to receive the outlet plug. The aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The inlet assembly may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.

Abstract: An exemplary semiconductor processing system may include a processing chamber and a first plasma source. The first plasma source may utilize a first electrode positioned externally to the processing chamber, and the first plasma source may be configured to generate a first plasma. The processing system may further comprise a second plasma source separate from the first plasma source that utilizes a second electrode separate from the first electrode. The second electrode may be positioned externally to the processing chamber, and the second plasma source may be configured to generate a second plasma within the processing chamber. The processing system may further comprise a showerhead disposed between the relative locations of the first plasma electrode and the second plasma electrode.

Abstract: A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials.

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract: Embodiments of the present invention relate to hollow cathode plasma sources with improved uniformity. One embodiment of the present invention provides a hollow cathode assembly having a conductive rod disposed in an inner volume along a central axis of a hollow cathode. The conductive rod being closest to the ground electrode and having the sharpest features of the hollow cathode becomes the point of plasma ignition. Since the conductive rod is positioned along the central axis, the plasma is ignited at symmetrically about the central axis thus improving plasma uniformity and reducing skews.

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract: The current document discloses an automated method and system for inferring the logical rules underlying the configuration and versioning state of the components and subcomponents of a complex system, including data centers and other complex computational environments. The methods and systems employ a database of configuration information and construct an initial set of logical rules, or hypotheses, regarding system configuration. Then, using simulated annealing and a variant of genetic programming, the methods and systems disclosed in the current document carry out a search through the hypothesis state space for the system under several constrains in order to find one or more hypotheses that best explain the configuration and, when available, configuration history. The constraints include minimization of the complexity of the hypotheses and maximizing the accuracy by which the hypotheses predict observed configuration and configuration history.