Abstract: We disclose an in-toilet urinalysis system which includes a system for collection urine and for analysis of urine components using aptamer technology. Urine collection system may dispense urine into cuvettes, channels, or other containers that include aptamers. The aptamers may detect target molecules in urine. The aptamers may measure urine analytes, detect excreted drugs or drug metabolites, or disease markers. Upon binding to the target molecule, the aptamers may produce a signal which a sensor in the toilet may detect. In some embodiments, the signal may be electrochemical, fluorescent, or colorimetric. The measurements obtained from analysis of the urine may be used to assess a user's health or diagnose disease. In some embodiments, the measurements are stored in a controller which may transmit the measurements to a healthcare provider for assessment.

Abstract: An electronic device manufacturing system may include a loadlock. The loadlock may include a plurality of gas line heaters for providing a heated gas to the loadlock to heat a processed substrate therein. Heating a processed substrate may reduce corrosion in the loadlock and subsequent contamination of substrates therein. The loadlock may also include a plurality of embedded heaters in the loadlock housing to reduce moisture therein, further reducing corrosion and contamination. Methods of heating a substrate in a loadlock are also provided, as are other aspects.

Abstract: Systems and methods are presented that allow for selection of tumor neoepitopes that are then used to generate a recombinant polytope that is optimized for proper trafficking and processing. In preferred methods, the polytope is encoded in a viral expression system that is used as a therapeutic agent.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one of more modules in a modular process chamber according to the present disclosure.

Abstract: A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

Abstract: Disclosed is a multi-port control valve with multi-lumen paths diverging flow so that, the multi-port control valve fills and expels fluid at the same time through the same port for use in a blood sampling, blood pressure monitoring system that includes a sampling site, a pressure transducer, and reservoir. The multi-port control valve may include a rotatable valve member and three ports. Each of the three ports is connected to one of the sampling site, the pressure transducer, and the reservoir. In particular, the rotatable valve member is rotatable, such that, depending upon a position of the rotatable valve member, one of the three ports is blocked from fluid communication with the other two ports.

Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes.

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.

Abstract: A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.

Abstract: Examples of the present invention include a method for removing halogen-containing residues from a substrate. The method includes transferring a substrate to a substrate processing system through a first chamber volume of a load lock chamber. The load lock chamber is coupled to a transfer chamber of the substrate processing system. The substrate is etched in one or more processing chambers coupled to the transfer chamber of the substrate processing system with chemistry from a showerhead disposed over a heated substrate support assembly. The chemistry includes halogen. Halogen-containing residues are removed from the etched substrate in a second chamber volume of the load lock chamber. Cooling the etched substrate in a cooled substrate support assembly of the load lock chamber after removing the halogen-containing residue.

Abstract: Contemplated cancer treatments comprise recursive analysis of patient-, cancer-, and location-specific neoepitopes from various biopsy sites of a patient after treatment or between successive rounds of immunotherapy and/or chemotherapy to inform further immunotherapy. Recursive analysis preferably includes various neoepitope attributes to so identify treatment relevant neoepitopes.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Certain universal neoepitopes and cancer specific neoepitopes and methods therefore are presented that may be used in immunotherapy and cancer diagnosis. Preferred therapeutic and diagnostic compositions include antibodies or fragments thereof that bind to neoepitopes on cancer cells.

Abstract: Disclosed is an adapter for use with a multi-port control valve that is used in a blood sampling, blood pressure monitoring system that includes a sampling site, a pressure transducer, and a reservoir. The multi-port control valve includes a partition and a rotatable valve member that rotates around to one of a reservoir port, a sampling site port, or a pressure transducer port to block fluid communication. The adapter comprises: a partition to define an input fluid path and an output fluid path, wherein the partition of the adapter mates with the partition of the multi-port control valve and a partition of the reservoir, in which, the partition in the adapter mates with the partition in the reservoir such that a fluid circuit is created from the multi-port control valve, through the adapter, and through the reservoir, and back to the multi-port control valve.

Abstract: Methods for targeting a tumor antigen for immunotherapy based on HLA allele type and the mutations present in the tumor antigen are presented. A patient's HLA allele type and a tumor antigen derived from a mutation in cancer driver gene can be matched with a majority allele type having a minimum affinity to the same tumor antigen or with those of a plurality of patients with a history of cancer treatment. Upon matching, a cancer treatment against the tumor antigen can be selected and administered to the patient to achieve a desired effect.

Abstract: A process condition measurement wafer assembly is disclosed. In embodiments, the process condition measurement wafer assembly includes a bottom substrate and a top substrate. In another embodiment, the process condition measurement wafer assembly includes one or more electronic components disposed on one or more printed circuit elements and interposed between the top substrate and bottom substrate. In another embodiment, the process condition measurement wafer assembly includes one or more shielding layers formed between the bottom substrate and the top substrate. In embodiments, the one or more shielding layers are configured to electromagnetically shield the one or more electronic components and diffuse voltage potentials across the bottom substrate and the top substrate.