Abstract: A semiconductor sensor component including a housing with a cavity and a sensor chip and a method for producing the same are described herein. The housing includes an opening to the surroundings of the housing and the sensor chip includes a sensor region which faces the opening. The sensor chip is embedded in the cavity of the housing into a rubber-elastic layer with its rear side and its edge sides, where the rubber-elastic layer includes cleavable included organometallic or inorganic metallic complexes. The metals of the complexes lie in a freely accessible manner on the top side of the rubber-elastic layer and form metallic nuclei for wiring lines which electrically connect the sensor region of the sensor chip to contact pads in the cavity of the cavity housing.

Abstract: A semiconductor module includes a module package including a first substrate having a first semiconductor device and a second substrate having a second semiconductor device. A first outer conductor extends from the module package and is connected to the first substrate and a second outer conductor extends from the module package and is connected to the second substrate. A method for producing the semiconductor module includes attaching first outer conductors of a leadframe to a first substrate, where the first substrate includes a first semiconductor device that is attached to the first substrate either before or after attaching the first outer conductors, A second substrate is provided including a signal processing circuit and the second substrate is fastening to second outer conductors of the leadframe.

Abstract: A component arrangement comprising a carrier, a component in a housing with electrical contacts and a moulding compound that encloses the carrier, the semiconductor component in the housing and the electrical contacts, wherein the component is applied on the carrier, and wherein the carrier is provided with holes, and a method for producing a component arrangement, wherein the carrier is provided with holes, the component is positioned on the carrier, the component is connected to the carrier, the component with the carrier is positioned in the leadframe, and this arrangement is enclosed by a moulding compound.

Abstract: A circuit arrangement includes a component or an integrated circuit firmly attached on a wiring carrier via an adhesive layer. Furthermore, a pyrolytically deposited adhesion promoter layer with high surface energy and/or high porosity in the nanometer range is selectively provided on a metallic adherend location of the wiring carrier.

Abstract: An electronic module includes a component housing and at least one semiconductor chip. The semiconductor chip is arranged on a circuit carrier in the component housing. The semiconductor chip is connected to an upper face of the circuit carrier via connection elements. In this case, the semiconductor chip, the connection elements and, partially, the circuit carrier are embedded in a plastic housing compound. A metal plate which is structured into lead interconnects and contact connecting pads is provided on the upper face of the component housing.

Abstract: The invention relates to a semiconductor module comprising stacked discrete components and a method for producing the same. In one embodiment, the semiconductor module has a semiconductor chip arranged on a wiring substrate. The discrete components are arranged and wired on an intermediate carrier, which is electrically connected to the wiring substrate and/or the semiconductor chip. The wiring substrate carries the semiconductor chip, the semiconductor chip carries the intermediate carrier and the intermediate carrier carries the discrete components.

Abstract: A semiconductor chip (1) has a metal coating structure (2) which has on an active upper side (3) of the semiconductor chip (1) at least one lower metal layer (8) with copper or copper alloy, on which a central metal layer (9) with nickel is arranged. The metal coating structure (2) is terminated by an upper metal layer (10) of palladium and/or a precious metal. The central metal layer (9) with nickel and/or nickel phosphide has a rough interface (11) with respect to the plastic package molding compound surrounding the metal coating structure (2).

Abstract: A layer improves adhesion between interfaces of different components in semiconductor devices. The interface of a first component includes surfaces of a circuit carrier and the interface of a second component includes contact surfaces of a plastic package molding compound. The adhesion-improving layer includes a mixture of polymeric chain molecules and carbon nanotubes.

Abstract: A semiconductor component includes flip-chip contacts arranged on a wiring structure of a semiconductor chip. The wiring structure includes at least one metallization layer and at least one dielectric insulation layer made of a low-k material with a relative permittivity ?r lower than the relative permittivity of a silicon dioxide. The flip-chip contacts are arranged on contact areas of an upper metallization layer and have a polymer core surrounded by a lead-free solder sheath.

Abstract: A semiconductor component includes at least one semiconductor chip arranged on a mounting substrate and connected thereto via bonding wires. For effective dissipation of heat, a solderable interlayer is arranged on the active upper side of the semiconductor chip and a heat sink is soldered onto the solderable interlayer. A method is also described for producing a semiconductor component with a solderable interlayer disposed on an active upper side of a semiconductor chip and with a heat sink soldered to the solderable interlayer.

Abstract: One aspect of the invention relates to a power semiconductor device in lead frame technology and a method for producing the same. The power semiconductor device has a vertical current path through a power semiconductor chip. The power semiconductor chip has at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a lead frame chip island of a lead frame and the top side electrode is electrically connected to an internal lead of the lead frame via a connecting element. The connecting element has an electrically conductive film on a surface facing the top side electrode, the electrically conductive film extending from the top side electrode to the internal lead.

Abstract: A plastic housing composition for embedding semiconductor devices in a plastic housing includes a multicomponent plastic material, where at least one component is distributed in the plastic material in drop-shaped and/or spherical units. The drop-shaped and/or spherical units are surrounded by dimensionally stable sheaths made from a plastic sheath material. The multicomponent plastic further includes a reactive curing system that cures when the plastic sheaths are torn open. The dimensionally stable plastic sheath material is deformation-sensitive, so that the sheaths tear open under mechanical deformation loading, which initiates and/or accelerates the curing process.

Abstract: The invention relates to a semiconductor device with conductor tracks between a semiconductor chip and a circuit carrier, and to a method for producing the same. The conductor tracks extend from contact areas on the top side of the semiconductor chip to contact pads on the circuit carrier. The conductor tracks include an electrically conductive polymer in the semiconductor device.

Abstract: A semiconductor sensor component including a sensor chip and methods for the manufacturing thereof is disclosed. In one embodiment, the semiconductor sensor component includes a package which itself includes a transparent plastic material. The sensor chip has an active top side and a back side, wherein a sensor area is arranged on the active top side and flipchip contacts are provided outside of the sensor area on the active top side. These flipchip contacts are electrically connected to a circuit structure, wherein the circuit structure allows free access to the sensor area. The sensor chip including the sensor area and the flipchip contacts and a part of the circuit structure which is electrically connected to the flipchip contacts are embedded in the transparent plastic material, wherein the transparent plastic material includes a rubber-elastic substance.

Abstract: A method of joining a thermoplastic material to a thermoset material, and a resultant thermoplastic-thermoset composite formed from such method are provided. At least one of the thermoplastic material and the thermoset material includes particles that melt when the thermoplastic material and the thermoset material are heated during the joining operation. The particles further produce a solid bond between the materials after the particles have solidified in the course of cooling after the joining operation.