Abstract: The invention offers an ultracapacitor-based power system solution with four main functional blocks which are power conditioning block, monitoring block, charge-discharge block and protection block. The proposed system has the advantage of working well in the environment of vibration, high temperature, has a large capacity to provide a large amount and radiates less heat compared to systems using traditional batteries. In addition, the system has functions to protect and stabilize the output voltage, and the operating parameters of the system is monitored continuously.

Abstract: A wet connect apparatus operable in a down-hole environment includes an annular electrical contact, which includes a resilient outer member constructed of coiled spring having its ends fused together, and also includes an inner retention member constructed of a gift ring embedded or installed within the resilient outer member. The inner retention member provides a radial bias to retain the annular electrical contact within an electrically conductive groove during installation and assembly of the wet connect apparatus.

Abstract: The present invention provides quantum dot compositions and methods of producing quantum dot compositions. The quantum dot compositions comprise a population of quantum dots, a siloxane polymer, an emulsification additive, and an organic resin. The present invention also provides quantum dot films comprising a quantum dot layer and methods of making quantum dot films.

Abstract: A wellhead assembly includes a wellhead housing with a bore and an annular lock groove on an inner diameter surface of the bore. A wellbore member is concentrically located within the bore of the wellhead housing, defining an annulus between the wellbore member and the wellhead housing. An annular lock ring is positioned in the annulus. The annular lock ring has an outer diameter profile for engaging the lock groove and is radially expandable from an unset position to a set position. An energizing ring is positioned in the annulus to push the lock ring outward to the set position as the energizing ring moves downward. A retainer selectively engages the energizing ring and limits axial upward movement of the energizing ring relative to the wellbore member, retains the annular lock in the set position, and prevents axial upward movement of the wellbore member relative to the wellhead housing.

Abstract: A wet connect apparatus operable in a down-hole environment includes an annular electrical contact, which includes a resilient outer member constructed of coiled spring having its ends fused together, and also includes an inner retention member constructed of a gift ring embedded or installed within the resilient outer member. The inner retention member provides a radial bias to retain the annular electrical contact within an electrically conductive groove during installation and assembly of the wet connect apparatus.

Abstract: A measurement while drilling (MWD) tool includes a sensor, an encoder operably connected to the sensor and a pulser operably connected to the encoder. The pulser includes a linearly acting bidirectional piston that operates a poppet valve. The poppet valve is designed to completely or partially interrupt the flow of fluid through the MWD tool. The selective operation of the piston-driven poppet valve creates pressure signals that are carried through the fluid. The piston assembly that drives the poppet valves includes wear rings that improve the performance and durability of the piston.

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract: A method includes forming a refractory metal alloy layer above a silicon-containing material, performing a first heating process to form a metal silicide region in at least a portion of the silicon-containing material using the refractory metal alloy layer, and removing at least a first portion of an unreacted portion of the refractory metal alloy layer using a first solution comprising a solvent and an organic chelator.

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract: Methods and apparatus for determining aspects of locations based on interactions of users with the locations. In some implementations, an aspect of a location may be determined based on comparing a first interaction measure for the location to a second measure. The first interaction measure may be determined based on a first group of interactions that are associated with the location. In some implementations, the second measure may be determined based on a second group of interactions that include additional interactions that are in addition to the interactions of the first group.

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract: A system for integrating access to separate and physically partitioned networks from a single client device is described. The system is interposed between the client device and the networks to allow communication between the client device and the networks, such that data remains partitioned between networks. The system includes a scrambler configured to mix portions of data of variable bit lengths. Typically, the scrambler receives the portions of data from each of the plurality of networks, intermixes the portions of data from the networks, then selects different paths for transporting the intermixed portions of data to the client device. Each of the different paths for transporting the intermixed portions of data are physically and/or logically partitioned from each other. Only when the data arrives on the client device is it able to be reassembled, and then only in particular partitioned locations on the client device corresponding to the particular network from which the data originated.

Abstract: A coating for use in protecting surfaces susceptible to environmental degradation. The coating may be applied to metallic surfaces for providing a barrier against elements and/or ambient conditions that would otherwise degrade the surface material. The coating includes multiple layers, where a thermoplastic polymer is included, wholly or partly, within one or more of the layers. Example applications of the coating are for protecting valve seat seals and valve stem seals of a valve assembly used in conjunction with handling of fluids produced from a subterranean formation.

Abstract: Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, and optionally NH4OH.

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract: A gate valve for use in oil field applications having a seal assembly made up of an elastomeric case and a spring in the case having a V-shaped cross section. The spring has legs that depend from one another, and free ends of the legs that are contoured towards one another to define a rounded surface on outer surfaces of the legs. The rounded surface reduces stress contact between the spring and the case, thereby prolonging seal assembly life. The seal assembly can be placed between a stem in the valve and a gland packing. Other seal assembly locations include between a seat ring and counterbore in the valve body.

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.