Abstract: The disclosure provides methods and tools allowing production of large quantities of double stranded RNA (dsRNA) in bacterial cells, including plasmid vectors useful for transforming gram-positive or gram-negative bacterial cells such that the cells produce high yields of target dsRNA.

Abstract: The invention relates to a curable photochromic composition including (a) a photochromic material, (b) an active hydrogen group-containing component of (i) an active hydrogen group-containing fluorinated polymer having an active hydrogen group equivalent weight ranging from 200 to 5000 g/mole and a number average molecular weight ranging from 5,000 to 50,000 g/mole, and (ii) a polymer having at least two active hydrogen groups per molecule, a number average molecular weight of at least 1000 g/mole, and an equivalent weight of at least 500 g/mole; and (c) a curing agent having functional groups which are reactive with active hydrogen groups. Also provided are photochromic articles.

Abstract: Circuits, semiconductor devices, and systems are provided. An illustrative circuit includes a driver circuit having an unterminated input side comprising a plurality of input-side transistors, each of which are unterminated, where a first input-side transistor in the plurality of input-side transistors includes a gate that is connected to an input terminal and that is further connected to a second input-side transistor in the plurality of input-side transistors by a first transmission line. The driver circuit further includes a terminated output side including a plurality of output-side transistors, where a first output-side transistor in the plurality of output-side transistors comprises an emitter directly connected to a collector of the first input-side transistor, and where a collector of the first output-side transistor is connected to a second output-side transistor by a second transmission line.

Abstract: Single-chip solutions and related methods that result in much higher capacitance densities than is achievable with current on-chip solutions and which reduce consumption of planar area of a mounting structure. Embodiments of the present invention use vertical stacking to affix one or more discrete embeddable capacitors to an IC chip superstructure or base structure, and either sequentially or concurrently form electrical connections between the discrete embeddable capacitors and the IC chip. The inventive processes are compatible with CMOS fabrication temperatures for the IC chip while allowing use of capacitors that are fabricated using other processes that may involve much higher temperatures. The inventive processes allow connection of relatively large capacitances (e.g., ~0.5 ?F-1 ?F) to an IC chip without increasing the 2-D footprint of the IC chip.

Abstract: A process for converting a molten polymeric material is provided. The process includes effecting disposition of a molten polymeric material, having at least one carbon-carbon double bond, in sufficient proximity to a catalyst material within a reaction zone, to affect a reactive process that effects generation of a reaction product. The reactive process effects cleaving of at least one carbon-carbon double bond. The catalyst material includes [Fe—Cu—Mo—P]/Al2O3 prepared by binding a ferrous-copper complex to an alumina support to generate an intermediate material and reacting the intermediate material with a heteropoly acid.

Abstract: In one aspect, a computer-implemented method for redundant multicast groups, includes receiving a request for an element of content from a device, where the element of content is associated with a first source address and a redundant source group identifying multiple servers in a network including the element of content, determining a second source address within the redundant source group has a shorter distance to a location of the device, and routing packets associated with the element of content from the second source address to the device. The method further includes determining the connection has failed, and routing, automatically upon determining the connection has failed, the device to a third source address of the multiple servers, where the third source address is selected according to a server selection policy.

Abstract: A heatable optical article is provided. The heatable optical article includes: an optical substrate comprising a first surface and a second surface opposite the first surface; an electrode located over at least a portion of the first surface, wherein the electrode includes an electrically conductive three-dimensional network; a photochromic coating comprising at least one photochromic material; and a power supply electrically connected to the electrode. A method of making the heatable optical article is also provided.

Abstract: Circuits, semiconductor devices, and systems are provided. An illustrative system includes an amplifier circuit that produces non-linear self-heating errors during operation thereof. The system is further disclosed to include a replica amplifier circuit coupled with the amplifier circuit, where the replica amplifier circuit comprises a correction element that counteracts the non-linear self-heating errors produced in the amplifier circuit.

Abstract: Single-chip solutions that result in high capacitance and/or inductance densities. Embodiments provide relatively large capacitance and/or inductance values for applications utilizing DC and/or sub-KHz signals up to RF signals. Embodiments may include an integrated circuit having a substrate having a backside, a substructure formed on the substrate, and a superstructure formed on the substructure and having a metallization layer, the integrated circuit further including at least one backside deep trench capacitor structure including: one or more trenches formed in the backside of the substrate and lined with a first conductive layer, a dielectric, and a second conductive layer; a first electrical connection between the first conductive layer and a first portion of the metallization layer; and a second electrical connection between the second conductive layer and a second portion of the metallization layer.

Abstract: Methods and materials for improved delivery of dsRNA are presented. In particular, methods for controlling an insect pest by stably delivering large quantities of dsRNA to the insect pest are provided. Compositions comprising a bacterium containing a large quantity of dsRNA targeting an insect gene in which the dsRNA exhibits increased stability and activity are also provided.

Abstract: This disclosure provides crystalline polymorphs of squalamine phosphate, methods of making the same, and methods of treatment using the same.

Abstract: Systems and techniques are described herein for processing video data. For example, a process can include applying a deblocking (DB) filter to generate a DB-filtered plurality of sub-blocks with a bottom pixel row offset by a sub-block height from a bottom boundary of the block. The DB filter can be applied to a top pixel row in an additional, adjacent sub-block to generate an additional DB-filtered pixel row. A sample adaptive offset (SAO) filter applied to the DB-filtered plurality of sub-blocks can generate an SAO-filtered plurality of sub-blocks having a bottom pixel row offset from the bottom pixel row in the DB-filtered plurality of sub-blocks by the sub-block height. The SAO filter applied to the additional DB-filtered pixel row can generate an additional SAO-filtered sub-block between the bottom pixel row in the SAO-filtered plurality of sub-blocks and the bottom pixel row in the DB-filtered plurality of sub-blocks.

Abstract: Single-chip solutions that result in high capacitance and/or inductance densities. Embodiments provide relatively large capacitance and/or inductance values for applications utilizing DC and/or sub-KHz signals up to RF signals. Embodiments may include an integrated circuit having a substrate having a backside, a substructure formed on the substrate, and a superstructure formed on the substructure and having a metallization layer, the integrated circuit further including at least one backside deep trench capacitor structure including: one or more trenches formed in the backside of the substrate and lined with a first conductive layer, a dielectric, and a second conductive layer; a first electrical connection between the first conductive layer and a first portion of the metallization layer; and a second electrical connection between the second conductive layer and a second portion of the metallization layer.

Abstract: Disclosed devices, systems, and methods may enhance communication protocols for low latency applications. Systems may include a device and a host interconnected by a high-performance interconnect and/or communication link. The device may comprise a transmitter, a receiver, and a control unit that may manage a credit-based flow control mechanism. In some aspects, the device may initiate a push write request, send a data header with an identifier (UQID) matching the push write request identifier (CQID), and transmit the data payload. The host may receive the push write request, match the UQID with the CQID, perform the write operation, and send a completion message back to the device. The method may involve ensuring sufficient credits before initiating the push write transaction, which may help prevent data loss and ensure reliable delivery. The push write mechanism may reduce the number of link traversals required for device-to-host memory writes, potentially lowering overall latency.

Abstract: The present invention relates to combinations of GPR119 receptor agonists with DPP-4 inhibitors and their use thereof for treating or preventing cardiovascular and metabolic disorders, including diabetes mellitus, non-alcoholic fatty liver disease (NAFLD), NAFL, NASH, dyslipidemia, and related disorders thereto.

Abstract: Single-chip solutions and related methods that result in much higher capacitance densities than is achievable with current on-chip solutions and which reduce consumption of planar area of a mounting structure. Embodiments of the present invention use vertical stacking to affix one or more discrete embeddable capacitors to an IC chip superstructure or base structure, and either sequentially or concurrently form electrical connections between the discrete embeddable capacitors and the IC chip. The inventive processes are compatible with CMOS fabrication temperatures for the IC chip while allowing use of capacitors that are fabricated using other processes that may involve much higher temperatures. The inventive processes allow connection of relatively large capacitances (e.g., ˜0.5 ?F-1 ?F) to an IC chip without increasing the 2-D footprint of the IC chip.

Abstract: Amplifiers with multi-tone peak detection for equalizer adaptation are described herein. An example amplifier circuit includes an amplifier, a multi-tone peak detector coupled to an output of the amplifier, a first control loop, and a second control loop. The multi-tone peak detector is configured to generate a first peak output signal and a second peak output signal based on the output of the amplifier. The first control loop is configured to generate a gain control signal for the amplifier based on the first peak output signal, and the second control loop is configured to generate an equalization control signal for the amplifier based on the first peak output signal and the second peak output signal.

Abstract: Radiosensitizer prodrugs and formulations and methods of use thereof are provided. Typically, the radiosensitizer prodrug is an analog of a radiosensitizer parent compound having one or more S-nitrosothiol moieties. Typically, the S—N bond of the S-nitrosothiol moiety can be cleaved by radiation during radiotherapy, releasing the parent compound and nitric oxide. One or preferably both the parent compound and the nitric oxide can contribute to death of tumor cells exposed to radiotherapy. Nanoparticle formulations for delivery of the prodrug, and methods of using them in combination with radiotherapy to treat tumors and cancer are also provided.

Abstract: A method for beam management in side-link communication between User Equipment (UEs) (104) operating in a wireless communication network (100) is described. The method comprises transmitting a reference signal using at least one beam by a first UE (104-1). The first UE (104-1) receives a feedback report of the at least one beam based on the reference signal from the second UE (104-2, 104-4). The feedback report of the at least one beam comprises at least one of UE identifier (ID), beam ID, beam strength, and beam validity. The first UE (104-1) updates entries of a beam management table based on the feedback report.

Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a gate electrode in a gate layer. The gate electrode has a first gate length and a second gate length. The second gate length is greater than the first gate length. The FET also includes an active region in a active region layer. The active region includes a source region and a drain region. The active region layer is beneath the gate layer. The FET has a first channel under the gate electrode having the first gate length and between the source region and the drain region. The FET also has a second channel under the gate electrode having the second gate length and between the source region and the drain region.