Abstract: A coated cathode material including high-nickel lithium cathode and a method of producing the same by atomic layer deposition.

Abstract: Manufacturing a detector device such as a microchannel plate (MCP) includes using a first atomic layer deposition (ALD) process with first precursor materials to deposit a resistive layer on a substrate and thereby form a resistive-coated substrate, the first precursor materials including a conductive rhenium material and an insulative aluminum material. The resistive layer is deposited as interspersed conductive and insulative regions of a rhenium constituent and an aluminum constituent respectively in a predetermined ratio. A second ALD process with second precursor materials is used to deposit an emissive layer on the resistive-coated substrate, the emissive layer being constituted to generate electrical carriers in use of the detector device to be sensed by external sensing circuitry as detected events. The first ALD process is performed at a deposition temperature sufficiently above 200° C. to obtain a dark-current contribution of the resistive layer of less than about 600 Hz/cm2.

Abstract: A coated cathode material including high-nickel lithium cathode and a method of producing the same by atomic layer deposition.

Abstract: A method for coating of lithium ion electrode materials via atomic layer deposition. The coated materials may be integrated in part as a dopant in the electrode itself via heat treatment forming a doped lithium electrode.

Abstract: A method of modifying a battery cathode material includes the steps of heating the battery cathode material to a temperature of about 250° C. to about 350° C.; while heating, exposing the battery cathode material to an organometallic gas; and purging the organometallic gas from the battery cathode material, wherein the method removes lithium carbonate from the cathode material surface.

Abstract: A method for forming lithium argyrodite composite powders includes providing within an atomic layer deposition (ALD) reactor lithium argyrodite powders of formula Li7?xBCh6?xXx, where 0<x<1, B is phosphorous or arsenic, Ch is sulfur or selenium, and X is F, Cl, Br, I, or a mixture of any two or more thereof; and depositing a coating on the lithium argyrodite powders by an ALD process to form coated lithium argyrodite powders. The method of depositing the coating includes (A) introducing a first precursor gas into the ALD reactor to form first precursor complexes on surfaces of the lithium argyrodite powders; and (B) introducing a first co-reactant into the ALD reactor, the first co-reactant reactive with the first precursor complexes.

Abstract: A process for forming a lithium-metal-oxygen film on a lithium SSE. A metal-ligand complex is exposed to the SSE such as for 30-600 seconds in a chemical vapor transfer reactor at a temperature of 200-350° C.

Abstract: A method for modifying argyrodite-type material. The argyrodite-type material is exposed to a fluorine precursor. The argyrodite-type material may have a carbonate coating that has formed, such as due to exposure to air, with such carbonate coating at least partially removed by exposure to the fluorine precursor. The argyrodite-type material may further be doped by fluorine after exposure to the precursor. Further, the argyrodite-type material may have a capping layer formed thereon.

Abstract: A method for coating of lithium ion electrode materials via atomic layer deposition. The coated materials may be integrated in part as a dopant in the electrode itself via heat treatment forming a doped lithium electrode.

Abstract: A functionalized glass device, such as a microchannel plate, includes a glass substrate having a chemistry including an ionic species that may diffuse toward a surface, and a functional layer supported by the glass substrate and having a functional characteristic that may be undesirably altered by introduction of the ionic species during operation of the device. An ion barrier layer is disposed between the surface of the glass substrate and the functional layer, the ion barrier layer being substantially of a metal oxide material effective to limit the diffusion of the ionic species into the functional layer.

Abstract: A discharged electrochemical cell as described herein comprises an electrochemically reactive metal-containing cathode (e.g., Li, Na, Mg, or Zn; preferably Li) and a layered anode with an electrolyte therebetween. The layered anode comprises a conductive substrate and a reactive film of a metal, a semimetal, a metal oxide, or a semimetal oxide on the surface of the substrate. The reactive film is capable of reversibly alloying with, reversibly forming a mixed phase with, or reversibly reacting with, metal from cathode during charging of cell, and releasing the metal back to the cathode during discharge of the cell.

Abstract: A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition (“ALD”). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.

Abstract: A coated cathode material including high-nickel lithium cathode and a method of producing the same by atomic layer deposition.

Abstract: A calorimetry sensor having a porous substrate and a temperature sensitive resistive coating. The calorimetry sensor has a known temperature coefficient of resistance. A process utilizes the known temperature coefficient of resistance and monitors changes in resistance of the calorimetry sensor to determine changes in temperature (heat) within an environment, such as during reactions within an ALD reactor.

Abstract: A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.

Abstract: A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.

Abstract: The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 ?) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials.

Abstract: Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition (“ALD”) process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.

Abstract: The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.

Abstract: ALD and p-CVD methods to generate MgB2 and MgB2-containing films in the growth temperature range of 250-300° C. The thermal ALD and p-CVD methods shown herein ensure that the high-temperature-induced roughening, which causes high surface resistances in MgB2 coatings grown by the mentioned conventional techniques, is avoided. The MgB2 and MgB2-containing films exhibit superconductive properties at above 20° K.