Patents by Inventor Anil U. Mane

Anil U. Mane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220298626
    Abstract: A process for forming a lithium-metal-oxygen film on a lithium SSE. A metal-ligand complex is exposed to the SSE such as for 30-600 seconds in a chemical vapor transfer reactor at a temperature of 200-350° C.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 22, 2022
    Inventors: Donghyeon KANG, Jeffrey W. ELAM, Joseph A. LIBERA, Yujia LIANG, HackSung KIM, Anil U. MANE
  • Patent number: 11447862
    Abstract: Transition metal dichalcogenides (TMDs) are deposited as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: September 20, 2022
    Assignees: UChicago Argonne, LLC, Boise State University
    Inventors: Anil U. Mane, Jeffrey W. Elam, Steven Letourneau, Elton Graugnard
  • Publication number: 20220293900
    Abstract: A process for forming a fluoride-based coating on an electrode material that is at least partially covered with a surface carbonate, includes disposing the electrode material in a reactor. The electrode material is exposed to a vapor of a fluoride-based precursor material such that the fluoride-based precursor material dopes the surface carbonate so as to form a layer of a fluoride coating on the electrode material.
    Type: Application
    Filed: May 18, 2021
    Publication date: September 15, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Jeffrey W. Elam, Pragathi Darapaneni
  • Patent number: 11435114
    Abstract: Selective receiver coatings provide high performance for concentrated solar power applications. The solar selective coating provides high solar absorptivity (90% or greater) with low IR emissivity (0.1 or less) while maintaining stability at temperatures greater than 700° C. The coating comprises a composite of a mesoporous photonic matrix with a conformal optical coating. One example composite coating includes a mesoporous photonic coating comprising a plurality of particles having sizes between 100 nm and 2000 nm, and a conformal optical coating formed by Atomic Layer Deposition (ALD) that infiltrates the mesoporous structure of the photonic coating and comprises metal nanoparticles and an amorphous dielectric matrix.
    Type: Grant
    Filed: February 6, 2016
    Date of Patent: September 6, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Angel Yanguas-Gil, Joseph A. Libera
  • Patent number: 11414756
    Abstract: Time projection chambers are useful for high energy particle physics, nuclear physics, and astronomy. To enhance the particle detection efficiency and performance of the projection chambers functional bilayer thin film coatings based on the atomic layer deposition method are utilized. Coating material selection is based on Auger neutralization process ion induced electron emission from metallic surfaces (e.g., Mo or W) combined with a high secondary electron emission coefficient. Application of high secondary electron emission materials (e.g., MgO and CaF2) enhances the multiplication of these emitted electrons from ion induction processes. Therefore, using suitable bilayer coatings the overall TPC signal detection efficiency can be increased.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: August 16, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Stephen Magill
  • Patent number: 11414749
    Abstract: A process for forming a lithium-metal-carbon film on a lithium metal structure. A metal-ligand complex is exposed to the metal ligand, such as for 5-30 seconds in a chemical vapor transfer reactor at a temperature of 100-180° C.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: August 16, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Donghyeon Kang, Jeffrey W. Elam, Anil U. Mane
  • Patent number: 11393681
    Abstract: Transition metal dichalcogenides (TMDs) are deposited by atomic layer deposition as thin layers on a substrate. The TMDs may be grown on oxide substrates and may have a tunable TMD-oxide interface. The TMD may be etched using an atomic layer etching technique.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: July 19, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Jeffrey W. Elam
  • Patent number: 11326255
    Abstract: A system and method for improved atomic layer deposition. The system includes a top showerhead plate, a substrate and a bottom showerhead plate. The substrate includes a porous microchannel plate and a substrate holder is positioned in the system to insure flow-through of the gas precursor.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: May 10, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Joseph Libera, Jeffrey W. Elam
  • Publication number: 20220098736
    Abstract: A lithium boron coating and a method of producing the same. Atomic layer deposition deposits lithium and boron to form a lithium borate layer. The lithium borate maybe deposited as a solid electrolyte.
    Type: Application
    Filed: September 30, 2020
    Publication date: March 31, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam
  • Publication number: 20220098734
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Application
    Filed: September 30, 2020
    Publication date: March 31, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane
  • Publication number: 20220098730
    Abstract: The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.
    Type: Application
    Filed: September 30, 2020
    Publication date: March 31, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Jeffrey W. Elam, Seth B. Darling, Nestor J. Zaluzec, Alex B. Martinson
  • Publication number: 20220085348
    Abstract: The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 ?) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials.
    Type: Application
    Filed: August 17, 2021
    Publication date: March 17, 2022
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Jeffrey W. Elam, Joong Sun Park, Jason R. Croy
  • Patent number: 11257682
    Abstract: A method of etching an organic or hybrid inorganic/organic material. The method etches molecular layer deposition coatings. An etching cycle comprises a first half reaction exposing the coating to a precursor. A second half reaction exposes a second precursor, removing or etching a portion of the coating.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: February 22, 2022
    Assignee: UChicago Argonne, LLC
    Inventors: Matthias John Young, Steven Payonk Letourneau, Devika Choudhury, Jeffrey W. Elam, Angel Yanguas-Gil, Anil U. Mane
  • Publication number: 20210336240
    Abstract: A method for coating of lithium ion electrode materials via atomic layer deposition. The coated materials may be integrated in part as a dopant in the electrode itself via heat treatment forming a doped lithium electrode.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 28, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Jason R. Croy, Jeffrey W. Elam, Arturo Gutierrez, Jihyeon Gim, Devika Choudhury, Eungje Lee, Hakim Iddir
  • Patent number: 11158856
    Abstract: An electrode comprises an electrode core. A composite bilayer coating is conformally disposed on the electrode core. The composite bilayer coating comprises a first layer disposed on at least a portion of the electrode core. The first layer comprises a metal fluoride, a metal oxide or a metal sulfide. A second layer is disposed on the first layer and comprises a metal fluoride, a metal oxide or a metal sulfide.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: October 26, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Jason R. Croy, Jeffrey W. Elam, Mahalingam Balasubramanian
  • Patent number: 11142824
    Abstract: An ultra-thin film transition metal dichalcogenide (“TMD”) supported on a support. The TMD is formed from a metal grown by atomic layer deposition (“ALD”) on a substrate. The metal is sulphurized to produce a TMD ultra-thin layer.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: October 12, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Devika Choudhury, Jeffrey W. Elam, Steven Payonk Letourneau
  • Patent number: 11121355
    Abstract: The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 ?) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: September 14, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Anil U. Mane, Jeffrey W. Elam, Joong Sun Park, Jason R. Croy
  • Patent number: 11111578
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: September 7, 2021
    Assignee: UChicago Argonne, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Maximillian Gebhard
  • Publication number: 20210254209
    Abstract: A secondary electron emissive coating. The coating is formed by atomic layer deposition of CaF2 on a substrate by ALD half cycle exposure of an alkaline metal amidinate and ALD half cycle exposure of a fluorinated compound, where the deposition occurs at a reaction temperature greater than a highest sublimation temperature of the first metal precursor and the second metal precursor and less than 50° C. above the highest sublimation temperature.
    Type: Application
    Filed: February 13, 2020
    Publication date: August 19, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Jeffrey W. Elam, Anil U. Mane, Maximillian Gebhard
  • Publication number: 20210238769
    Abstract: Coated nanofibers and methods for forming the same. A magnetic nanofiber is formed and a barrier coating is deposited on the magnetic nanofiber by atomic layer deposition (“ALD”) process. The coated nanofiber may include a reduced magnetic nanostructure and a barrier coating comprising a first oxide coating on the nanofiber, the coating being non-reactive with the magnetic polymer nanofiber, the barrier coating have a thickness of 2 nm to 12 nm.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 5, 2021
    Applicant: UCHICAGO ARGONNE, LLC
    Inventors: Anil U. Mane, Yuepeng Zhang, Devika Choudhury, Jeffrey W. Elam, Kaizhong Gao, John N. Hryn