Abstract: Internally asymmetric methods and circuits for evaluating static memory cell dynamic stability provide a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the internal symmetry of a static random access memory (SRAM) memory cell, operating the cell and observing changes in performance caused by the asymmetric operation, the dynamic stability of the SRAM cell can be studied over designs and operating environments. The asymmetry can be introduced by splitting one or both power supply rail inputs to the cell and providing differing power supply voltages or currents to each cross-coupled stage. Alternatively or in combination, the loading at the outputs of the cell can altered in order to affect the performance of the cell. A memory array with at least one test cell can be fabricated in a production or test wafer and internal nodes of the memory cell can be probed to provide further information.

Abstract: An internally asymmetric method for evaluating static memory cell dynamic stability provide a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the internal symmetry of a static random access memory (SRAM) memory cell, operating the cell and observing changes in performance caused by the asymmetric operation, the dynamic stability of the SRAM cell can be studied over designs and operating environments. The asymmetry can be introduced by splitting one or both power supply rail inputs to the cell and providing differing power supply voltages or currents to each cross-coupled stage. Alternatively or in combination, the loading at the outputs of the cell can altered in order to affect the performance of the cell. A memory array with at least one test cell can be fabricated in a production or test wafer and internal nodes of the memory cell can be probed to provide further information.

Abstract: A method for evaluating leakage effects on static memory cell access time provides a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the states of other static memory cells connected to the same bitline as a static memory cell under test, the effect of leakage on the access time of the cell can be observed. The leakage effects can further be observed while varying the internal symmetry of the memory cell, operating the cell and observing changes in performance caused by the asymmetric operation. The asymmetry can be introduced by splitting one or both power supply rail inputs to the cell and providing differing power supply voltages or currents to each cross-coupled stage.

Abstract: A ring oscillator row circuit for evaluating memory cell performance provides for circuit delay and performance measurements in an actual memory circuit environment. A ring oscillator is implemented with a row of memory cells and has outputs connected to one or more bitlines along with other memory cells that are substantially identical to the ring oscillator cells. Logic may be included for providing a fully functional memory array, so that the cells other than the ring oscillator cells can be used for storage when the ring oscillator row wordlines are disabled. One or both power supply rails of individual cross-coupled inverter stages forming static memory cells used in the ring oscillator circuit may be isolated from each other in order to introduce a voltage asymmetry so that circuit asymmetry effects on delay can be evaluated.

Abstract: Bitline variable methods and circuits for evaluating static memory cell dynamic stability provide a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the bitline pre-charge voltage of a static random access memory (SRAM) memory cell, operating the cell and observing changes in performance caused by the changes in the bitline voltage, the dynamic stability of the SRAM cell can be studied over designs and operating environments. Alternatively or in combination, the loading at the outputs of the cell can altered in order to affect the performance of the cell. In addition, cell power supply voltages can be split and set to different levels in order to study the effect of cell asymmetry in combination with bitline pre-charge voltage differences.

Abstract: Internally asymmetric methods and circuits for evaluating static memory cell dynamic stability provide a mechanism for raising the performance of memory arrays beyond present levels/yields. By altering the internal symmetry of a static random access memory (SRAM) memory cell, operating the cell and observing changes in performance caused by the asymmetric operation, the dynamic stability of the SRAM cell can be studied over designs and operating environments. The asymmetry can be introduced by splitting one or both power supply rail inputs to the cell and providing differing power supply voltages or currents to each cross-coupled stage. Alternatively or in combination, the loading at the outputs of the cell can altered in order to affect the performance of the cell. A memory array with at least one test cell can be fabricated in a production or test wafer and internal nodes of the memory cell can be probed to provide further information.

Abstract: A method of modeling electromagnetism in an irregular conductive plane, by dividing the surface into a grid of unequal and unaligned rectangles, assigning a circuit node location to a center of each rectangle, and calculating capacitive and inductive parameters based on the center circuit node locations. Rectangulation is accomplished using automated, recursive bisection. Capacitive segments are assigned to each circuit node and coincide with the corresponding rectangles. Inductive segments are assigned between adjacent rectangle pairs, with a width of an inductive segment defined as the common boundary of the corresponding pair of rectangles and the length of the inductive segment defined as the normal distance between circuit nodes of the two rectangles. Placement of the circuit nodes at the centers of the rectangles significantly reduces the number of nodes and segments, and provides a faster yet comprehensive analysis framework.

Abstract: An integrated circuit design has circuit macros made up of device cells. The cells are characterized by determining the leakage current dependency on various process, environmental and voltage parameters. When circuit macros are designed their leakage power is calculated using this data and multi-dimensional models for power and temperature distribution. Circuit macros are identified as timing-critical and timing-noncritical macros. Statistical methods are used to determine the average leakage sensitivities for the specific circuit macros designed. The designer uses the sensitivity data to determine how to redesign selected circuit macros to reduce leakage power. Reducing leakage power in these selected circuits may be used to reduce overall IC power or the improved power margins may be used in timing-critical circuits to increase performance while keeping power dissipation unchanged.

Abstract: A method, system, and product are disclosed for determining a voltage drop across an entire integrated circuit package. A geometric description of the entire integrated circuit package is determined. The description is subdivided into non-uniform areas. A resistance of each one of the non-uniform areas is determined. A resistive netlist of the entire integrated circuit package is then determined by combining the resistance of each one of the non-uniform areas. The package is then simulated utilizing the netlist to determine the voltage drop across the entire integrated circuit package.

Abstract: An efficient method and computer program for modeling and improving stating memory performance across process variations and environmental conditions provides a mechanism for raising the performance of memory arrays beyond present levels/yields. Statistical (Monte-Carlo) analyses of subsets of circuit parameters are performed for each of several memory performance variables and then sensitivities of each performance variable to 15 each of the circuit parameters are determined. The memory cell design parameters and/or operating conditions of the memory cells are then adjusted in conformity with the sensitivities, resulting in improved memory yield and/or performance. Once a performance level is attained, the sensitivities can then be used to alter the probability distributions of the performance variables to achieve a higher yield.

Abstract: A method of and system for optimizing a tree to meet timing constraints inserts buffers at selected ones of the internal nodes of a tree to form a plurality of subtrees. The method sizes the wires of the subtrees according to a wire code for each subtree, wherein each wire of a subtree has the same wire code. The buffers are inserted and the wires are sized such that slack along the path from a single source node to each sink node of the tree is equal to or greater than zero.

Abstract: A block-based statistical timing analysis technique is provided in which the delay and arrival times in the circuit are modeled as random variables. The arrival times are modeled as Cumulative Probability Distribution Functions (CDFs) and the gate delays are modeled as Probability Density Functions (PDFs). This leads to efficient expressions for both max and addition operations, the two key functions in both regular and statistical timing analysis. Although the proposed approach can handle any form of the CDF, the CDFs may also be modeled as piecewise linear for computational efficiency. The dependency caused by reconvergent fanout is addressed, which is a necessary first step in a statistical STA framework. Reconvergent fanouts are efficiently handled by a common mode removal approach using statistical “subtraction.

Abstract: A method for determining an interconnect delay at a node in an interconnect having a plurality of nodes. The method includes performing a bottom-up tree traversal to compute the first three admittance moments for each of the nodes in the interconnect. The computed admittance moments are utilized, in an advantageous embodiment, to compute a pi-model of the downstream load. Next, the equivalent effective capacitance value Ceff is computed utilizing the components of the computed pi-model and the Elmore delay at the node under evaluation. In an advantageous embodiment, Ceff is characterized by: Ceff=Cfj(1?e?T/?dj) where Cfj is the far-end capacitance of the pi-model at the node, T is the Elmore delay at the node and ?dj is the resistance of the pi-model (Rdj) multiplied by Cfj. The interconnect delay at the node is then determined utilizing an effective capacitance metric (ECM) delay model.

Abstract: A method of determining a circuit response (such as delay or slew) from a ramp input of an RC circuit calculates two circuit response parameters using a given circuit response metric based on a step input for the RC circuit, and extends the circuit response metric to a ramp input of the RC circuit by combining the first and second circuit response parameters to yield an estimated ramp response. The novel technique is based on the use of probability distribution functions and cumulative distribution functions to characterize the impulse response of the RC circuit, and the calculating steps derive the first and second circuit response parameters from such statistical distribution functions. In particular, the calculating steps may use a standard deviation or a mean of a probability distribution function corresponding to the circuit response parameter. In one application, the invention is used to estimate delay response for the ramp input of the RC circuit.

Abstract: A method, system, and product are disclosed for determining a voltage drop across an entire integrated circuit package. A geometric description of the entire integrated circuit package is determined. The description is subdivided into non-uniform areas. A resistance of each one of the non-uniform areas is determined. A resistive netlist of the entire integrated circuit package is then determined by combining the resistance of each one of the non-uniform areas. The package is then simulated utilizing the netlist to determine the voltage drop across the entire integrated circuit package.

Abstract: A method of determining a circuit response (such as delay or slew) from a ramp input of an RC circuit calculates two circuit response parameters using a given circuit response metric based on a step input for the RC circuit, and extends the circuit response metric to a ramp input of the RC circuit by combining the first and second circuit response parameters to yield an estimated ramp response. The novel technique is based on the use of probability distribution functions and cumulative distribution functions to characterize the impulse response of the RC circuit, and the calculating steps derive the first and second circuit response parameters from such statistical distribution functions. In particular, the calculating steps may use a standard deviation or a mean of a probability distribution function corresponding to the circuit response parameter. In one application, the invention is used to estimate delay response for the ramp input of the RC circuit.

Abstract: An integrated circuit design has circuit macros made up of device cells. The cells are characterized by determining the leakage current dependency on various process, environmental and voltage parameters. When circuit macros are designed their leakage power is calculated using this data and multi-dimensional models for power and temperature distribution. Circuit macros are identified as timing-critical and timing-noncritical macros. Statistical methods are used to determine the average leakage sensitivities for the specific circuit macros designed. The designer uses the sensitivity data to determine how to redesign selected circuit macros to reduce leakage power. Reducing leakage power in these selected circuits may be used to reduce overall IC power or the improved power margins may be used in timing-critical circuits to increase performance while keeping power dissipation unchanged.

Abstract: A method for determining full chip leakage power first estimates leakage power and dynamic power for each circuit macro. The power supply voltage to each macro is first assumed to be nominal. The power dissipation for each macro is modeled as a current source whose value is the estimated power divided by the nominal power supply voltage. The power distribution network is modeled as a resistive grids. The thermal environment of the IC and its electronic package are modeled as multi dimensional grids of thermal elements. Algebraic multi-grid (AMG) methods are used to calculate updated circuit macro voltages and temperatures. The macro voltages and temperatures are updated and updated leakage and dynamic power dissipation are calculated. Iterations are continued until leakage power converges to a final value.

Abstract: A block-based statistical timing analysis technique is provided in which the delay and arrival times in the circuit are modeled as random variables. The arrival times are modeled as Cumulative Probability Distribution Functions (CDFs) and the gate delays are modeled as Probability Density Functions (PDFs). This leads to efficient expressions for both max and addition operations, the two key functions in both regular and statistical timing analysis. Although the proposed approach can handle any form of the CDF, the CDFs may also be modeled as piecewise linear for computational efficiency. The dependency caused by reconvergent fanout is addressed, which is a necessary first step in a statistical STA framework. Reconvergent fanouts are efficiently handled by a common mode removal approach using statistical “subtraction.

Abstract: A method of determining a circuit response (such as delay or slew) from a ramp input of an RC circuit calculates two circuit response parameters using a given circuit response metric based on a step input for the RC circuit, and extends the circuit response metric to a ramp input of the RC circuit by combining the first and second circuit response parameters to yield an estimated ramp response. The novel technique is based on the use of probability distribution functions and cumulative distribution functions to characterize the impulse response of the RC circuit, and the calculating steps derive the first and second circuit response parameters from such statistical distribution functions. In particular, the calculating steps may use a standard deviation or a mean of a probability distribution function corresponding to the circuit response parameter. In one application, the invention is used to estimate delay response for the ramp input of the RC circuit.