Patents by Inventor Ann Margaret Concannon

Ann Margaret Concannon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF SELECTIVE OXYGEN IMPLANTATION TO DIELECTRICALLLY ISOLATE SEMICONDUCTOR DEVICES USING NO EXTRA MASKS
    Publication number: 20100190316
    Abstract: A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide growth. Since the method uses bulk silicon, it is cheaper than silicon-on-insulator (SOI) techniques. It also results in bulk silicon that is latch-up immune.
    Type: Application
    Filed: April 2, 2010
    Publication date: July 29, 2010
    Applicant: National Semiconductor Corporation
    Inventors: Denis Finbarr O'Connell, Ann Margaret Concannon
  • Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masks
    Patent number: 7741190
    Abstract: A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide growth. Since the method uses bulk silicon, it is cheaper than silicon-on-insulator (SOI) techniques. It also results in bulk-silicon that is latch-up immune.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: June 22, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Denis Finbarr O'Connell, Ann Margaret Concannon
  • Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masks
    Publication number: 20090042357
    Abstract: A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide growth. Since the method uses bulk silicon, it is cheaper than silicon-on-insulator (SOI) techniques. It also results in bulk-silicon that is latch-up immune.
    Type: Application
    Filed: August 9, 2007
    Publication date: February 12, 2009
    Inventors: Denis Finbarr O'Connell, Ann Margaret Concannon