Abstract: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.

Abstract: A single optical receiver having a photo-detector with a wide optical bandwidth and high efficiency within the wide optical bandwidth, the photo-detector comprising: a first diode region of first doping type for receiving light; a second diode region of second doping type and of second thickness; an active region for converting the received light to an electronic signal, the active region having a third thickness and configured to reside between the first diode region and the second diode region; and a reflector coupled to the second diode region and having a silicon layer with a fourth thickness, the silicon layer residing between silicon oxide layers of fifth thicknesses, wherein the active region is configured to absorb the light of wavelengths of less than 900 nm, and wherein the reflector is configured to reflect the light of wavelengths from a range of 1260 nm to 1380 nm.

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract: A buried dual taper waveguide has a flat surface after taper processing thus facilitating further processing with more complex photonic integrated circuits. This allows for light coupling between a large core size fiber and a small waveguide photonic integrated circuit. The taper structure disclosed enables monolithic integration of silicon photonic components and passive alignment for low-cost packaging.

Abstract: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a data rate of 25 Gb/s and beyond.

Abstract: A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

Abstract: Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: An electrical-optical coupling and detecting device. An apparatus according to an embodiment of the present invention includes a reflective surface defined on semiconductor material. The reflective surface is to reflect an incident optical beam towards an optical destination. An optical detector is monolithically integrated in the reflective surface of the semiconductor material. The optical detector arranged in the reflective surface of the semiconductor material is to detect the incident optical beam.

Abstract: A buried dual taper waveguide has a flat surface after taper processing thus facilitating further processing with more complex photonic integrated circuits. This allows for light coupling between a large core size fiber and a small waveguide photonic integrated circuit. The taper structure disclosed enables monolithic integration of silicon photonic components and passive alignment for low-cost packaging.

Abstract: A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

Abstract: Embodiments include systems and methods for integrated circuitry optical modulation. In one embodiment, an integrated circuit comprises an optical waveguide enabling multi-level modulation. The embodiment comprises an optical waveguide with integrated circuit modulators. An optical waveguide is split into at least two branches so that modulation can be imposed in each branch. In one embodiment, the branches are combined to produce an optical signal path in which additional modulation is imposed. In an embodiment of an integrated circuit optical demodulator, a received modulated optical signal is divided into branches and demodulated. Embodiments provide a single integrated circuit for multi-level modulation, thereby avoiding the disadvantages of modulation using separate discrete components. Also, a single integrated circuit for multi-level demodulation is provided.

Abstract: A method and apparatus for efficient coupling between a silicon photonic chip and an optical fiber is described. In one embodiment, an apparatus according to embodiments of the present invention includes: a first optical waveguide having a first end to optically couple to a first external device and a second end, the second end having a taper with a tip at the second end, a second optical waveguide optically coupled to the taper of the first optical waveguide, having a taper with a tip at a second end, and a third optical waveguide optically coupled to the taper of the second optical waveguide, the third optical waveguide to optically couple to a second external device having a larger cross-sectional area than the first external device.

Abstract: An optical bistable silicon Raman laser is disclosed, which provides digital signal regeneration, reshaping and wavelength conversion. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. First and second reflectors are disposed in the optical waveguide. The first and second reflectors define a cavity in the optical waveguide. The cavity is to receive a first optical beam having a first wavelength. A power level of the first optical beam received by the cavity rising above a second power level results in emission of a second optical beam of a second wavelength from the cavity until the power level of the first optical beam received by the cavity falls below a first power level. The first power level is less than the second power level.

Abstract: Embodiments include systems and methods for integrated circuitry optical modulation. In one embodiment, an integrated circuit comprises an optical waveguide enabling multi-level modulation. The embodiment comprises an optical waveguide with integrated circuit modulators. An optical waveguide is split into at least two branches so that modulation can be imposed in each branch. In one embodiment, the branches are combined to produce an optical signal path in which additional modulation is imposed. In an embodiment of an integrated circuit optical demodulator, a received modulated optical signal is divided into branches and demodulated. Embodiments provide a single integrated circuit for multi-level modulation, thereby avoiding the disadvantages of modulation using separate discrete components. Also, a single integrated circuit for multi-level demodulation is provided.

Abstract: An optical modulator or switch is disclosed. An apparatus includes an optical splitter disposed in a semiconductor material that splits an optical beam having a first wavelength into first and second portions. The first and second portions of the optical beam are to be directed through first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam to amplify and phase shift the first portion of the optical beam. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.

Abstract: An apparatus and method for high speed phase modulation of optical beam. For one embodiment, an apparatus includes an optical waveguide having adjoining first and second regions disposed in semiconductor material. The first and second regions have opposite first and second doping types, respectively. First, second and third higher doped regions of semiconductor material outside an optical path of the optical waveguide are also included. The first higher doped region has the first doping type and the second and third higher doped regions have the second doping type. The first, second and third higher doped regions have higher doping concentrations than doping concentrations within the optical path of the optical waveguide. The second and third higher doped regions are symmetrically adjoining and coupled to respective opposite lateral sides of the second region. The first higher doped region is asymmetrically adjoining and coupled to only one of two opposite lateral sides of the first region.

Abstract: An apparatus and method for high speed phase modulation of optical beam. For one embodiment, an apparatus includes an optical waveguide having adjoining first and second regions disposed in semiconductor material. The first and second regions have opposite doping types. A first buffer is disposed along the optical waveguide. A first higher doped region of semiconductor material is also included outside an optical path of the optical waveguide. An inner portion of the first higher doped region is adjoining and coupled to the first region of the optical waveguide. An outer portion of the first higher doped region is adjoining the first buffer. The first higher doped region has a higher doping concentration than a doping concentration within the optical path of the optical waveguide. A first contact having an inner portion adjoining and coupled to the first higher doped region is also included. The first contact has an outer portion adjoining the first buffer.

Abstract: A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

Abstract: An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.