Abstract: A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.

Abstract: Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junctions serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of the second field effect transistor is switchably connected to a programming voltage, such that when the second field effect transistor of a selected magnetic tunnel junction is switched to direct the programming voltage to program the selected magnetic tunnel junction an unswitched magnetic tunnel junction and the second field effect transistor do not experience a voltage drop across the gates thereof sufficient to degrade.

Abstract: A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.

Abstract: The present invention provides integrated circuit chips having chip identification aspects. The chips include magnetic tunnel junction (MTJ) structures, and more specifically, include permanent bit strings used for chip identification and/or authentication. Systems and processes for chip identification are also disclosed herein. The MTJ element structures provided herein can have a defined resistance profile such that the intrinsic variability of the MTJ element structure is used to encode and generate a bit string that becomes a fingerprint for the chip. In some embodiments, an oxygen treatment covering all or a selected portion of an array of MTJ elements can be used to create a mask or secret key that can be used and implemented to enhance chip identification.

Abstract: Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.

Abstract: Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.

Abstract: A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

Abstract: A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

Abstract: A magnetic memory device includes a magnetic memory stack including a bottom electrode and having a hard mask formed thereon. An encapsulation layer is formed over sides of the magnetic memory stack and has a thickness adjacent to the sides formed on the bottom electrode. A dielectric material is formed over the encapsulation layer and is removed from over the hard mask and gapped apart from the encapsulation layer on the sides of the magnetic memory stack to form trenches between the dielectric material and the encapsulation layer at the sides of the magnetic memory stack. A top electrode is formed over the hard mask and in the trenches such that the top electrode is spaced apart from the bottom electrode by at least the thickness.

Abstract: A method of making a magnetic random access memory (MRAM) device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer positioned in contact with the electrode, a free layer, and a tunnel barrier layer arranged between the reference layer and the free layer; and depositing an encapsulating layer on and along sidewalls of the MTJ by physical sputtering or ablation of a target material onto the MTJ.

Abstract: A method of making a magnetoresistive structure is disclosed. The method includes forming a pillar structure including a magnetic tunnel junction on a substrate that includes a first electrode, depositing a stressed layer onto a pillar structure sidewall, and depositing a second electrode above the magnetic tunnel junction.

Abstract: Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.

Abstract: A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

Abstract: A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode.

Abstract: Techniques for forming OTP memory elements with reduced breakdown voltage are provided. In one aspect, a method of forming an OTP MRAM element includes the steps of: creating a substrate having surface topology; and forming the OTP MRAM element on the substrate over the surface topology, wherein the OTP MRAM element comprises a first magnetic metal layer and a second metal magnetic layer separated by a tunnel barrier, and wherein by forming the OTP MRAM element over the surface topology the tunnel barrier has both a first thickness T1 and second thickness T2, wherein T1 is greater than T2. A method of forming a device having both MTP MRAM and OTP MRAM elements is provided, as is an MRAM device.

Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

Abstract: A method of making a magnetoresistive structure is disclosed. The method includes forming a pillar structure including a magnetic tunnel junction on a substrate that includes a first electrode, depositing a stressed layer onto a pillar structure sidewall, and depositing a second electrode above the magnetic tunnel junction.

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.