Abstract: According to one embodiment, a display device includes a connection electrode, a terminal electrode, an insulating layer including a contact hole, a lower electrode electrically connected to the connection electrode in the contact hole, a rib, a partition including a lower portion and an upper portion, an organic layer provided on the lower electrode, an upper electrode covering the organic layer, and a cover electrode covering the terminal electrode exposed from the insulating layer. The lower electrode includes a first transparent electrode, a first metal electrode located on the first transparent electrode, and a second transparent electrode located on the first metal electrode. The cover electrode is formed of a same material as the first transparent electrode.

Abstract: According to an embodiment, a display device includes a lower electrode, a rib including a pixel aperture which overlaps the lower electrode, a partition which includes a lower portion provided on the rib, a first layer provided on the lower portion and protruding from a side surface of the lower portion, and a second layer provided on the first layer and having a width less than a width of the first layer, an organic layer which covers the lower electrode through the pixel aperture and emits light based on application of voltage, and an upper electrode which covers the organic layer and is in contact with the side surface of the lower portion.

Abstract: According to one embodiment, a method of manufacturing a display device, includes forming a plurality of display elements each including a lower electrode, an organic layer which covers the lower electrode and an upper electrode which covers the organic layer, forming a first sealing layer which seals the plurality of display elements, individually, inspecting the plurality of display elements to determine whether any of the plurality of display elements entails a defect and forming, when in the inspection, it is confirmed that there is a defective one of the display elements, a repair hole which penetrates the first sealing layer which seals the defective one of the display elements.

Abstract: A laminate includes an amorphous glass substrate, and an AlN layer formed on the amorphous glass substrate. The AlN layer is c-axis oriented on the amorphous glass substrate, a glass transition temperature (Tg) of the amorphous glass substrate is 720° C. to 810° C., a coefficient of thermal expansion (CTE) of the amorphous glass substrate is 3.5×10?6 [1/K] to 4.0×10?6 [1/K], and a softening point of the amorphous glass substrate is 950° C. to 1050° C.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: According to one embodiment, a display device includes a lower electrode, a rib covering a part of the lower electrode and including a pixel aperture, a partition surrounds the pixel aperture, an upper electrode facing the lower electrode, and an organic layer between the lower and upper electrodes. The partition includes a conductive lower portion including an annular side surface which surrounds the pixel aperture, and an upper portion including an annular protrusion which protrudes from the side surface. The upper electrode is in contact with the side surface of the lower portion. The protrusion has a constant width over a whole circumference.

Abstract: According to one embodiment, a display device includes a lower electrode, a rib including a pixel aperture, a partition on the rib, an upper electrode contacting the partition, an organic layer between the lower and upper electrodes, and a sealing layer covering a display element and the partition, the display element including the lower electrode, the upper electrode and the organic layer. The sealing layer includes a first portion which is located above the rib and has a first thickness, and a second portion which is located above the lower electrode exposed from the rib through the pixel aperture and has a second thickness less than the first thickness.

Abstract: According to one embodiment, a display device includes a lower electrode, a rib covering a part of the lower electrode and includes a pixel aperture overlapping the lower electrode, an upper electrode facing the lower electrode, and an organic layer between the lower and upper electrodes. The lower electrode includes a metal layer including a first peripheral portion covered with the rib, and a first central portion exposed from the rib through the pixel aperture, and a conductive oxide layer including a second peripheral portion located on the rib, and a second central portion which is in contact with the first central portion through the pixel aperture.

Abstract: According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.

Abstract: According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

Abstract: According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

Abstract: A display device including TFTs in a pixel area and in a peripheral driving area in which the number of through-holes in a TFT circuit is decreased, and the mounting density of the TFTs is improved, so that a high-resolution display can be achieved. The display device includes a display area in which pixels are disposed in a matrix form, and a TFT substrate, on which a peripheral driving circuit is disposed, on the outer side of the display area. The pixels or the peripheral driving circuit includes TFTs (thin film transistors) each of which is formed in such a way that a first gate electrode of each TFT is formed relative to a semiconductor layer with a first gate insulating film therebetween, and a drain electrode and a source electrode of each TFT that are connected to the semiconductor layer are formed at layers different from each other.

Abstract: According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: According to one embodiment, a display device includes a first substrate including a first resin substrate having a first thermal expansion coefficient, and a first barrier layer having a second thermal expansion coefficient which is lower than the first thermal expansion coefficient, a second substrate including a second resin substrate having a third thermal expansion coefficient which is equal to the first thermal expansion coefficient, and a second barrier layer having a fourth thermal expansion coefficient which is lower than the third thermal expansion coefficient and is equal to the first thermal expansion coefficient, and a display element located between the first resin substrate and the second resin substrate.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.