Abstract: A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

Abstract: A method of inspecting an electrostatic chuck (ESC) is provided. The ESC has a dielectric support surface for a semiconductor wafer. The dielectric support surface is scanned with a Kelvin probe to obtain a surface potential map. The surface potential map is compared with a reference Kelvin probe surface potential map to determine if the ESC passes inspection.

Abstract: Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided.

Abstract: A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.

Abstract: A method for cleaning an electrode assembly comprising a backing plate bonded to an electrode plate for a plasma processing assembly, the method including the steps of contacting the backing plate and electrode plate with a solvent; spraying the backing plate and electrode plate with water; ultrasonically cleaning the electrode assembly; enclosing the electrode assembly in a flushing fixture defined by a base plate having a plurality of liquid passages and a cover plate configured to cover the base plate, the cover plate including at least one liquid passage; and flushing the electrode assembly in the flushing fixture by introducing a flushing liquid under pressure through said at least one liquid passage in the cover plate.

Abstract: A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both.

Abstract: A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis.

Abstract: A method of inspecting an electrostatic chuck (ESC) is provided. The ESC has a dielectric support surface for a semiconductor wafer. The dielectric support surface is scanned with a Kelvin probe to obtain a surface potential map. The surface potential map is compared with a reference Kelvin probe surface potential map to determine if the ESC passes inspection.

Abstract: A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

Abstract: In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

Abstract: A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

Abstract: An electrode transporter is provided comprising a transporter frame, a plurality of transitional support elements, and a plurality of flipside support elements. The flipside support elements are configured to immobilize an electrode along a gravitational force vector normal to a major face of an electrode positioned in an electrode accommodating space defined by the transitional support elements and the flipside support elements. The transitional support elements are configured to transition back and forth from a secured state, where the electrode is further immobilized along an opposing force vector opposite the gravitational force vector, to an unsecured state where the electrode is relatively mobile along the opposing force vector. Additional embodiments relate to the use of a transporter tripod and an electrode removal puck and lifting fork to remove an electrode from the transporter frame.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

Abstract: Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided.

Abstract: A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.

Abstract: A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.

Abstract: A plasma processing control system including a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing step is disclosed. The electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching. A system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.

Abstract: A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.