Abstract: A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Abstract: A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Abstract: A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.

Abstract: A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.