Abstract: A nonvolatile memory device includes a memory cell array having nonvolatile memory cells therein, which are electrically connected to a plurality of word lines and a plurality of bit lines. A write driver and row decoder are provided, which are electrically connected to the plurality of bit lines and the plurality of word lines, respectively. Control logic is configured to transfer a first voltage to the write driver and a second voltage to the row decoder. The control logic includes: (i) a normal standby mode circuit configured to operate in a normal standby mode, and (ii) a deep standby mode circuit configured to operate in a deep standby mode. To save power, the layout areas of a plurality of elements within the deep standby mode circuit are smaller than layout areas of elements within the normal standby mode circuit, so that current flowing within the deep standby mode circuit during the deep standby mode is less than current flowing within the normal standby mode circuit during the normal standby mode.

Abstract: A resistive memory device is provided. The resistive memory device includes a bitline, a source line, a memory cell electrically connected to the bitline and the source line by a first switch, a first transistor electrically connected to the bitline, a second transistor electrically connected to the source line, a gate voltage generator configured to generate a first gate voltage that is provided to a gate electrode of the first transistor, and configured to generate a second gate voltage that is provided to a gate electrode of the second transistor and a second switch that provides the first and second gate voltages to the gate electrodes of the first and second transistors.

Abstract: A memory device includes a cell array including a memory cell that includes a variable resistance element, a reference resistor configured to provide a resistance varying according to an adjustment code, and a read circuit configured to read data that is stored in the memory cell, based on a resistance of the variable resistance element and the resistance of the reference resistor. The memory device further includes a reference adjustment circuit configured to obtain a first calibration code corresponding to a temperature variation, and a second calibration code corresponding to a process variation, and perform an arithmetic operation on the obtained first calibration code and the obtained second calibration code, to obtain the adjustment code.

Abstract: A memory device includes: a cell array including a memory cell and a reference cell; a sense amplifier configured to sense a difference between a first current flowing through the memory cell and a second current flowing through the reference cell, based on an activated sense enable signal; a controller configured to inactivate the sense enable signal in a program interval and activate the sense enable signal in a verify interval subsequent to the program interval, during a write operation; and a voltage driver configured to provide a write voltage to the memory cell in the program interval and the verify interval during the write operation, and to provide a read voltage to the memory cell during a read operation.

Abstract: A resistive memory device is provided. The resistive memory device includes a bitline, a source line, a memory cell electrically connected to the bitline and the source line by a first switch, a first transistor electrically connected to the bitline, a second transistor electrically connected to the source line, a gate voltage generator configured to generate a first gate voltage that is provided to a gate electrode of the first transistor, and configured to generate a second gate voltage that is provided to a gate electrode of the second transistor and a second switch that provides the first and second gate voltages to the gate electrodes of the first and second transistors.

Abstract: A nonvolatile memory device includes; a memory cell array including memory cells connected with bit lines and feedback cells connected with feedback bit lines, a row decoder connected with the memory cells and the feedback cells through word lines, a column decoder connected with the memory cells through the bit lines and connected with the feedback cells through the feedback bit lines, and a charge pump that generates a pump voltage provided to a selected word line among the word lines, wherein the charge pump is controlled in response to feedback currents flowing through the feedback bit lines.

Abstract: A memory device includes a cell array including a memory cell that includes a variable resistance element, a reference resistor configured to provide a resistance varying according to an adjustment code, and a read circuit configured to read data that is stored in the memory cell, based on a resistance of the variable resistance element and the resistance of the reference resistor. The memory device further includes a reference adjustment circuit configured to obtain a first calibration code corresponding to a temperature variation, and a second calibration code corresponding to a process variation, and perform an arithmetic operation on the obtained first calibration code and the obtained second calibration code, to obtain the adjustment code.

Abstract: A memory device includes: a cell array including a memory cell and a reference cell; a sense amplifier configured to sense a difference between a first current flowing through the memory cell and a second current flowing through the reference cell, based on an activated sense enable signal; a controller configured to inactivate the sense enable signal in a program interval and activate the sense enable signal in a verify interval subsequent to the program interval, during a write operation; and a voltage driver configured to provide a write voltage to the memory cell in the program interval and the verify interval during the write operation, and to provide a read voltage to the memory cell during a read operation.

Abstract: A nonvolatile memory device includes; a memory cell array including memory cells connected with bit lines and feedback cells connected with feedback bit lines, a row decoder connected with the memory cells and the feedback cells through word lines, a column decoder connected with the memory cells through the bit lines and connected with the feedback cells through the feedback bit lines, and a charge pump that generates a pump voltage provided to a selected word line among the word lines, wherein the charge pump is controlled in response to feedback currents flowing through the feedback bit lines.

Abstract: A magnetic memory devices including a memory cell array including magnetic memory cells, a voltage generator configured to generate a gate voltage, a row decoder including a word line driver, the word line driver configured to be driven by the gate voltage generated from the voltage generator, and the row decoder connected to the memory cell array through a word line, a column decoder connected to the memory cell array through a plurality of bit lines and a plurality of source lines, and a write driver configured to transfer a write voltage to a bit line selected, from among the plurality of bit lines, by the column decoder, the word line driver driven by the gate voltage generated from the voltage generator may be provided.

Abstract: A resistive memory device according to an example embodiment of the inventive concepts includes: a cell array including a first section and a second section; a first column switch circuit connected to a memory cell and a reference cell of the first section through first bit lines; a second column switch circuit connected to a memory cell and a reference cell of the second section through second bit lines; and a column decoder configured to control the first and second column switch circuits such that one of the first bit lines connected to the memory cell and one of the second bit lines connected to the reference cell are selected according to a first column address, and one of the first bit lines connected to the reference cell and one of the second bit lines connected to the memory cell are selected according to a second column address.

Abstract: A memory device including a normal memory cell array including a first magneto-resistance memory cell that is connected to a first bit line, a first source line, and a first word line, and configured to receive a selection voltage through the first word line, a monitor memory cell array including a second magneto-resistance memory cell that is connected to a first signal line and a second signal line, a gate of a cell transistor of which is configured to receive a non-selection voltage, and a body bias generator configured to sense a leakage current flowing through the first signal line and control a body voltage provided to each of a body of a cell transistor of the first magneto-resistance memory cell and a body of the cell transistor of the second magneto-resistance memory cell based on the leakage current may be provided.

Abstract: A memory device includes a memory cell connected to a bit line and a source line, a read and write circuit configured to read data of the memory cell and/or write data in the memory cell, and a switch circuit configured to receive a selection signal based on a power supply voltage. The switch circuit includes a first switch connected between the bit line and the read and write circuit, a second switch connected between the source line and the read and write circuit, and a switch controller configured to turn on or turn off the first and the second switches based on the selection signal using one of a read voltage and a write voltage that are different from the power supply voltage.

Abstract: A memory device includes a memory cell array that includes memory cells, a row decoder that is connected with the memory cell array through word lines, a column decoder that is connected with the memory cell array through bit lines and source lines, and a write driver that outputs a write voltage in a write operation. The column decoder includes switches, which are respectively connected to the bit lines and are respectively connected to the source lines. During the write operation, a selected switch of the switches transfers the write voltage to a selected bit line of the bit lines. Each unselected switch of the switches electrically separates the write driver from a corresponding unselected bit line of the bit lines by using the write voltage.

Abstract: A memory device includes a memory cell connected to a bit line and a source line, a read and write circuit configured to read data of the memory cell and/or write data in the memory cell, and a switch circuit configured to receive a selection signal based on a power supply voltage. The switch circuit includes a first switch connected between the bit line and the read and write circuit, a second switch connected between the source line and the read and write circuit, and a switch controller configured to turn on or turn off the first and the second switches based on the selection signal using one of a read voltage and a write voltage that are different from the power supply voltage.

Abstract: A resistive memory device configured to calibrate a reference resistor includes a calibration resistor circuit including a calibration resistor, a first reference resistor, a first sense amplifier configured to compare input currents, a first switch set including a plurality of switches, and a controller configured to control the first switch set to allow the first sense amplifier to compare a first reference current passing through the first reference resistor with a first read current passing through a first memory cell during a read operation and compare the first reference current with a first calibration current passing through the calibration resistor during a calibrate operation. A path of the first reference current during the read operation is different from a path of the first reference current during the calibrate operation.

Abstract: A magnetic memory devices including a memory cell array including magnetic memory cells, a voltage generator configured to generate a gate voltage, a row decoder including a word line driver, the word line driver configured to be driven by the gate voltage generated from the voltage generator, and the row decoder connected to the memory cell array through a word line, a column decoder connected to the memory cell array through a plurality of bit lines and a plurality of source lines, and a write driver configured to transfer a write voltage to a bit line selected, from among the plurality of bit lines, by the column decoder, the word line driver driven by the gate voltage generated from the voltage generator may be provided.

Abstract: Provided is a control signal generator for a sense amplifier, the control signal generator including a replica circuit including replica transistors corresponding to transistors included in the sense amplifier, and configured to receive at least one input signal of the sense amplifier and a first control signal for enabling a sensing operation by the sense amplifier; and an amplifying circuit configured to output, by amplifying an output signal from the replica circuit, a second control signal for enabling an amplifying operation by the sense amplifier after the sensing operation is enabled.

Abstract: A memory device includes a memory cell array that includes memory cells, a row decoder that is connected to the memory cell array through word lines, a column decoder that is connected to the memory cell array through bit lines and source lines, a write driver that transfers a write voltage to a bit line, which is selected by the column decoder, from among the bit lines by using a gate voltage in a write operation, and control logic that generates the gate voltage. The gate voltage is higher than the write voltage.

Abstract: A resistive memory device according to an example embodiment of the inventive concepts includes: a cell array including a first section and a second section; a first column switch circuit connected to a memory cell and a reference cell of the first section through first bit lines; a second column switch circuit connected to a memory cell and a reference cell of the second section through second bit lines; and a column decoder configured to control the first and second column switch circuits such that one of the first bit lines connected to the memory cell and one of the second bit lines connected to the reference cell are selected according to a first column address, and one of the first bit lines connected to the reference cell and one of the second bit lines connected to the memory cell are selected according to a second column address.