Patents by Inventor Arvind Kamath

Arvind Kamath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190267698
    Abstract: A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal.
    Type: Application
    Filed: February 27, 2019
    Publication date: August 29, 2019
    Applicant: Thin Film Electronics ASA
    Inventors: Somnath MUKHERJEE, Aditi CHANDRA, Mao ITO, Arvind KAMATH, Scott BRUNER, Sambhu KUNDU, Anand DESHPANDE
  • Patent number: 10332686
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: June 25, 2019
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
  • Publication number: 20190013203
    Abstract: A method of making a MOS device, a MOS device containing an aluminum nitride layer, and a CMOS circuit are disclosed. The method includes depositing an aluminum nitride layer on a structure including a silicon layer, depositing a dopant ink on the structure, and diffusing the dopant through the aluminum nitride layer into the silicon layer. The structure also includes a gate oxide layer on the silicon layer and a gate on the gate oxide layer. The dopant ink includes a dopant and a solvent. The MOS device includes a silicon layer, a gate oxide layer on the silicon layer, a gate on the gate oxide layer, and an aluminum nitride layer on the gate. The silicon layer includes a dopant on opposite sides of the gate.
    Type: Application
    Filed: July 9, 2018
    Publication date: January 10, 2019
    Inventors: Raghav SREENIVASAN, Aditi CHANDRA, Arvind KAMATH
  • Publication number: 20180205135
    Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.
    Type: Application
    Filed: March 9, 2018
    Publication date: July 19, 2018
    Applicant: Thin Film Electronics ASA
    Inventors: Mao TAKASHIMA, Aditi CHANDRA, Somnath MUKHERJEE, Gloria WONG, Khanh VAN TU, Joey LI, Anton POPIOLEK, Arvind KAMATH
  • Patent number: 9947988
    Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: April 17, 2018
    Assignee: Thin Film Electronics ASA
    Inventors: Mao Takashima, Aditi Chandra, Somnath Mukherjee, Gloria Wong, Khanh Van Tu, Joey Li, Anton Popiolek, Arvind Kamath
  • Patent number: 9933767
    Abstract: Systems and methods for providing a dynamically synchronized instance to a network device. A repository database stores a process model instance having a layout defined by data elements. A design tool processor coupled to the repository database provides the instance to a user device and a network device. The user device modifies data elements of the instance to generate a first version instance, and the design tool processor generates a dynamically synchronized instance for storing and serving the dynamically synchronized instance to a network device.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: April 3, 2018
    Assignee: Schneider Electric Software, LLC
    Inventors: Iju V. Raj, Dirk K. Kozian, Thomas A. Troy, Prasanth Ittiera Eapen K, Elizabeth Geojy, Ajay Kumar Reddy Kopperla, Arvind Kamath
  • Publication number: 20170200608
    Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.
    Type: Application
    Filed: March 27, 2017
    Publication date: July 13, 2017
    Inventors: Wenzhuo GUO, Fabio Z√úRCHER, Arvind KAMATH, Joerg ROCKENBERGER
  • Patent number: 9640390
    Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: May 2, 2017
    Assignee: Thin Film Electronics ASA
    Inventors: Wenzhuo Guo, Fabio Zurcher, Arvind Kamath, Joerg Rockenberger
  • Publication number: 20170098508
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 6, 2017
    Applicant: Thin Film Electronics ASA
    Inventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI
  • Publication number: 20170040665
    Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.
    Type: Application
    Filed: August 5, 2016
    Publication date: February 9, 2017
    Applicant: Thin Film Electronics ASA
    Inventors: Mao TAKASHIMA, Aditi CHANDRA, Somnath MUKHERJEE, Gloria WONG, Khanh VAN TU, Joey LI, Anton POPIOLEK, Arvind KAMATH
  • Publication number: 20170031353
    Abstract: Systems and methods for providing a dynamically synchronized instance to a network device. A repository database stores a process model instance having a layout defined by data elements. A design tool processor coupled to the repository database provides the instance to a user device and a network device. The user device modifies data elements of the instance to generate a first version instance, and the design tool processor generates a dynamically synchronized instance for storing and serving the dynamically synchronized instance to a network device.
    Type: Application
    Filed: July 29, 2015
    Publication date: February 2, 2017
    Applicant: INVENSYS SYSTEMS, INC.
    Inventors: Iju V. Raj, Dirk K. Kozian, Thomas A. Troy, Prasanth Ittiera Eapen K, Elizabeth Geojy, Ajay Kumar Reddy Kopperla, Arvind Kamath
  • Patent number: 9552924
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: January 24, 2017
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
  • Patent number: 9359513
    Abstract: Printable dopant formulations, methods of making such dopant formulations, and methods of using such dopant formulations are disclosed. The dopant formulations provide a printable dopant ink with a viscosity sufficient to prevent ink spreading when deposited in a pattern on a substrate. Furthermore, an ion exchange purification process provides the dopant formulation with a reduced metal ion concentration, and thus a relatively high purity level. Consequently, the dopant residue remaining on the substrate after curing and/or dopant activation process is relatively uniform, and therefore can be easily removed.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: June 7, 2016
    Assignee: Thin Film Electronics ASA
    Inventors: Mao Takashima, Inna Tregub, Wenzhuo Guo, Brian Bedwell, Klaus Kunze, Aditi Chandra, Arvind Kamath, Jun Li, Li Li, Junfeng Mei
  • Patent number: 9299845
    Abstract: Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: March 29, 2016
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Michael Kocsis, Kevin McCarthy, Gloria Man Ting Wong
  • Publication number: 20160035762
    Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g.
    Type: Application
    Filed: September 8, 2015
    Publication date: February 4, 2016
    Applicant: THIN FILM ELECTRONICS, ASA
    Inventors: James Montague CLEEVES, J. Devin MACKENZIE, Arvind KAMATH
  • Patent number: 9196641
    Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: November 24, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, James Montague Cleeves, Joerg Rockenberger, Patrick Smith, Fabio Zurcher
  • Patent number: 9183973
    Abstract: Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: November 10, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Michael Kocsis, Kevin McCarthy, Gloria Wong, Jiang Li
  • Patent number: 9165238
    Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: October 20, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: James Montague Cleeves, J. Devin MacKenzie, Arvind Kamath
  • Patent number: 9045653
    Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: June 2, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: Erik Scher, Steven Molesa, Joerg Rockenberger, Arvind Kamath, Ikuo Mori, Wenzhuo Guo, Dmitry Karshtedt, Vladimir K. Dioumaev
  • Publication number: 20150146345
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Application
    Filed: February 3, 2015
    Publication date: May 28, 2015
    Applicant: Thin Film Electronics ASA
    Inventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI