Abstract: The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of SiON) disposed over the silicon layer, wherein the interface layer includes an interface waveguide. The system also includes an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip. The system additionally includes a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits the top surface of the semiconductor chip.

Abstract: An optical source is described. This optical source includes a set of semiconductor optical amplifiers, with a semiconductor other than silicon, which provides an optical gain medium. In addition, a photonic chip, optically coupled to the set of semiconductor optical amplifiers, includes optical paths. Each of the optical paths includes an optical waveguide and a distributed-Bragg-reflector (DBR) ring resonator. The DBR ring resonator at least partially reflects a given tunable wavelength in an optical signal provided by a given semiconductor optical amplifier. Moreover, the DBR ring resonator includes a different number of grating periods than DBR ring resonators in the remaining optical paths, and the DBR ring resonators in the optical paths have a common radius.

Abstract: The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of SiON) disposed over the silicon layer, wherein the interface layer includes an interface waveguide. The system also includes an optical coupler that couples an optical signal from the silicon waveguide in the silicon layer to the interface waveguide in the interface layer, wherein the interface waveguide channels the optical signal in a direction parallel to a top surface of the semiconductor chip. The system additionally includes a mirror, which is oriented to reflect the optical signal from the interface waveguide in a surface-normal direction so that the optical signal exits the top surface of the semiconductor chip.

Abstract: An integrated circuit includes optical waveguides defined in a semiconductor layer, and uses removable optical taps to allow for in-process characterization and trimming. These optical waveguides may be trimmed during fabrication of the integrated circuit to improve performance. Note that the trimming may modify indexes of refraction of portions of the optical waveguides or may involve a more invasive process. Moreover, the trimming may exclude or may not involve the use of a polymer and/or the carrier wavelengths at a given temperature may be stable as a function of time. The trimming process may use removable optical taps for external feedback to determine the amount of change required. These optical taps may be formed either in the semiconductor layer or the cladding layer, and they may be disabled with negligible impact to device performance via alterations to the cladding layer after the completion of trimming.

Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.

Abstract: An integrated circuit that includes a wavelength-filter layer stack (which may include silicon oxynitride) and an optical substrate (such as a silicon-on-insulator platform) is described. During operation, an optical signal received from an optical fiber or an optical waveguide is wavelength filtered into a set of wavelength-filter optical waveguides by an optical multiplexer/demultiplexer (such as an Echelle grating and/or an array waveguide grating) in the wavelength-filter layer stack. Then, wavelength-filtered optical signals are optically coupled to the optical substrate, where they are received using photodetectors. Alternatively, modulators in the optical substrate modulate wavelength-filtered modulated optical signals, which are then optically coupled to the set of wavelength-filter optical waveguides in the wavelength-filter layer stack.

Abstract: An integrated circuit includes an optical source (such as a laser) with a lens, which is disposed on an isolator. This isolator is disposed on a semiconductor layer in a silicon-on-insulator (SOI) platform that includes an optical coupler and an optical waveguide. During operation, the optical source generates an optical signal that propagates toward the isolator so that the lens focuses the optical signal. Furthermore, the isolator reduces or eliminates back reflection of the optical signal toward the optical source, and the optical coupler couples the optical signal into the optical waveguide.

Abstract: The disclosed embodiments relate to a system for assembling an optical connector. During the assembly process, the system first fabricates the optical connector, wherein the optical connector is precut and includes a fiber coupler for connecting to an external optical fiber. Next, the system bonds the optical connector to a photonic chip, wherein the photonic chip includes an optical coupler, which is coupled to one or more optical components within the photonic chip. Finally, after the optical connector is bonded to the photonic chip, the system uses a laser to write a coupling waveguide in the optical connector, wherein the coupling waveguide is routed through the optical connector to connect the optical coupler in the photonic chip with the fiber coupler for connecting to the external optical fiber.

Abstract: A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity.

Abstract: A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity.

Abstract: The disclosed embodiments relate to a system that locks a wavelength of a hybrid laser to a wavelength of a reference laser, wherein a lasing cavity of the hybrid laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector, a phase tuner, a laser ring filter and a silicon mirror. During operation, while the hybrid laser is turned off, the system tunes a reference ring filter to the wavelength of the reference laser. Next, the system turns on the hybrid laser. The system then tunes the laser ring filter in the hybrid laser to the reference ring filter. Finally, the system adjusts the phase tuner in the hybrid laser to align a lasing cavity mode of the hybrid laser with the tuned laser ring filter.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, a semiconductor layer in an SOI platform may include a photonic crystal having a group velocity of light that is less than that of the semiconductor layer. Moreover, an optical modulator (such as a Mach-Zehnder interferometer) may be implemented in the photonic crystal with a vertical junction in the semiconductor layer. During operation of the optical modulator, an input optical signal may be split into two different optical signals that feed two optical waveguides, and then subsequently combined into an output optical signal. Furthermore, during operation, time-varying bias voltages may be applied across the vertical junction in the optical modulator using contacts defined along a lateral direction of the optical modulator.

Abstract: An integrated circuit includes optical waveguides defined in a semiconductor layer, and uses removable optical taps to allow for in-process characterization and trimming. These optical waveguides may be trimmed during fabrication of the integrated circuit to improve performance. Note that the trimming may modify indexes of refraction of portions of the optical waveguides or may involve a more invasive process. Moreover, the trimming may exclude or may not involve the use of a polymer and/or the carrier wavelengths at a given temperature may be stable as a function of time. The trimming process may use removable optical taps for external feedback to determine the amount of change required. These optical taps may be formed either in the semiconductor layer or the cladding layer, and they may be disabled with negligible impact to device performance via alterations to the cladding layer after the completion of trimming.

Abstract: The disclosed embodiments relate to a system that implements a hybrid laser. This system includes a reflective gain medium (RGM) comprising an optical gain material coupled to a mirror. This RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. During operation, the RGM, the spot-size converter, the silicon waveguide and the silicon mirror collectively form a lasing cavity, wherein an effective thermo-optic coefficient (TOC) of a portion of the lasing cavity that passes through the optical gain material and the SSC material is substantially the same as the TOC of silicon. Finally, a laser output is optically coupled out of the lasing cavity.

Abstract: A transceiver separates wavelength-division-multiplexing (WDM) components into two groups, one of which is more sensitive to temperature than the other group. The temperature-sensitive group of optical components is implemented on a first substrate in the transceiver that has a lower thermo-optic coefficient than a second substrate in the transceiver, which contains the group of optical components that is less temperature sensitive. In particular, the first substrate, which may be glass, may include WDM components that convey optical signals having multiple carrier wavelengths. Moreover, the second substrate, such as a silicon substrate (e.g., a silicon-on-insulator platform), may include multiple parallel optical paths with optical components, in which a given optical path conveys an optical signal having a given carrier wavelength.

Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.

Abstract: A multi-chip module (MCM) is described. This MCM includes a driver integrated circuit that includes electrical circuits, a photonic chip, an interposer, and an optical gain chip. The photonic chip may be implemented using a silicon-on-insulator technology, and may include an optical waveguide that conveys an optical signal and traces that are electrically coupled to the driver integrated circuit. Moreover, the interposer may be electrically coupled to the traces. Furthermore, the optical gain chip may include a III/V compound semiconductor (and, more generally, a semiconductor other than silicon), and may include a second optical waveguide that conveys the optical signal and that is vertically aligned with the optical waveguide relative to a top surface of the interposer. Additionally, the optical gain chip may be electrically coupled to the interposer.

Abstract: An optical receiver is described. Using silicon-photonic components that support a single polarization, the output of an optical receiver is independent of the polarization of an optical signal. In particular, using a polarization-diversity technique, the two orthogonal polarizations in a single-mode optical fiber are split in two and processed independently. For example, the two optical signals may be provided by a polarization-splitting grating coupler. Subsequently, a redistribution element provides mixtures of the two optical signals. Next, a wavelength channel in the two mixed optical signals is selected using a wavelength-selective filter (for example, using ring-resonator drop filters or an echelle grating) and converted into an electrical signal at an optical detector (such as a photodetector) to achieve polarization-independent operation.

Abstract: An optical receiver includes: an active transimpedance amplifier (TIA) that converts a photocurrent from a photosensor into an active voltage signal; a high-speed amplifier that amplifies the active voltage signal to produce an amplified voltage signal that comprises an output for the optical receiver; and a reference-voltage-generation circuit that generates a reference voltage for the high-speed amplifier. This reference-voltage-generation circuit includes a dummy TIA that is identical to the active TIA, but does not receive a live input signal, and produces a dummy voltage signal. It also includes a low-speed amplifier which includes: an active input that receives the active voltage signal from the active TIA output; a dummy input that receives the dummy voltage signal from the dummy TIA output; and an output that controls directly or indirectly the reference voltage for the high-speed amplifier.

Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.