Abstract: The surface-treated steel includes: a steel; a plated layer containing Zn or a Zn alloy formed on a surface of the steel; and a chemical conversion coating film formed on a surface of the plated layer, wherein the chemical conversion coating film contains an organosilicon compound having a siloxane bond, and P and F, and when the abundance ratio of an alkylene group and a siloxane bond in the organosilicon compound is measured by Fourier transform infrared spectroscopy (FT-IR), a ratio A1/A2 of a peak value A1 of an absorbance at 2,800 to 3,000 cm?1 indicating the alkylene group to a peak value A2 of an absorbance at 1,030 to 1,200 cm?1 indicating the siloxane bond is 0.10 to 0.75.

Abstract: What is provided is a surface-treated steel sheet including a steel sheet, a zinc-based plated layer formed on a surface of the steel sheet, and a chemical conversion treatment layer formed on a surface of the zinc-based plated layer, in which the chemical conversion treatment layer contains Si, C, O and P, the chemical conversion treatment layer has a C concentration of 20.0 mass % or more, an O concentration of 15.0 mass % or more, a Si concentration of 10.0 mass % or more, and a P concentration of 0.

Abstract: This surface-treated steel sheet includes: a steel sheet; a Zn-based plating layer formed on the steel sheet; and a coating formed on the Zn-based plating layer, in which a Si concentration, a P concentration, a F concentration, a V concentration, a Zr concentration, a Zn concentration, and an Al concentration of the coating are, by mass %, Si: 10.00% to 25.00%, P: 0.01% to 5.00%, F: 0.01% to 2.00%, V: 0.01% to 4.00%, Zr: 0.01% to 3.00%, Zn: 0% to 3.00%, and Al: 0% to 3.00%, in a narrow spectrum of 5i2p obtained by performing XP S analysis on a surface of the coating, a ratio of an integrated intensity of a peak having a local, maximum value, at 103.37±0.25 eV to an integrated intensity of a peak having a local maximum value at 102.26±0.25 eV is 0.04 or more and 0.25 or less.

Abstract: A communication apparatus for use in a communication system including a call control apparatus and a key information distribution apparatus is provided.

Abstract: A communication apparatus for use in a communication system including a call control apparatus and a key information distribution apparatus is provided.

Abstract: A hot-dip Zn alloy plating layer is formed on a surface of a base steel sheet by immersing the base steel sheet in a hot-dip Zn alloy plating bath containing Al and Mg. An aqueous solution containing a polyatomic ion including Si4+ and/or a polyatomic ion including Cr6+ is then contacted with a surface of the hot-dip Zn alloy plating layer. All of the aqueous solution coating the surface of the hot-dip Zn alloy plating layer is removed with a squeeze roller. The aqueous solution contains the polyatomic ion in a concentration of 0.01 g/L or more in terms of atom of Si and Cr. A surface temperature of the hot-dip Zn alloy plating layer when the aqueous solution is contacted with the surface of the hot-dip Zn alloy plating layer is 100° C. or above and equal to or less than a solidifying point of the plating layer.

Abstract: A method of producing a hot-dip Zn alloy-plated steel sheet comprising: dipping a base steel sheet in a hot-dip Zn alloy plating bath to form a hot-dip Zn alloy plating layer on a surface of the base steel sheet; and contacting an aqueous solution containing a vanadium compound with a surface of the hot-dip Zn alloy plating layer to cool the base steel sheet and the hot-dip Zn alloy plating layer having a raised temperature through formation of the hot-dip Zn alloy plating layer, and to form a composite oxide film on the surface of the hot-dip Zn alloy plating layer. A temperature of the hot-dip Zn alloy plating layer when the aqueous solution is to be contacted with the hot-dip Zn alloy plating layer is equal to or more than 100° C. and equal to or less than a solidifying point of the hot-dip Zn alloy plating layer.

Abstract: A hot-dip Zn alloy plating layer is formed on a surface of a base steel sheet by immersing the base steel sheet in a hot-dip Zn alloy plating bath containing Al and Mg. An aqueous solution containing one of or two or more of polyatomic ions selected from the group consisting of a polyatomic ion including V5+, a polyatomic ion including Si4+, and a polyatomic ion including Cr6+ is then contacted with a surface of the hot-dip Zn alloy plating layer. The aqueous solution contains the polyatomic ion in a concentration of 0.01 g/L or more in terms of one of or two or more of atoms selected from the group consisting of V, Si, and Cr.

Abstract: A method of producing a hot-dip Zn alloy-plated steel sheet includes: dipping a base steel sheet in a hot-dip Zn alloy plating bath to form a hot-dip Zn alloy plating layer on a surface of the base steel sheet; and contacting an aqueous solution containing a water-soluble corrosion inhibitor with a surface of the hot-dip Zn alloy plating layer to cool the base steel sheet and the hot-dip Zn alloy plating layer having a raised temperature through formation of the hot-dip Zn alloy plating layer. A temperature of the surface of the hot-dip Zn alloy plating layer when the aqueous solution is to be contacted with the surface of the hot-dip Zn alloy plating layer is equal to or more than 100° C. and equal to or less than a solidifying point of the plating layer. The aqueous solution containing the water-soluble corrosion inhibitor satisfies the Equation [{(Z0?Z1)/Z0}100?20].

Abstract: A method of producing a hot-dip Zn alloy-plated steel sheet includes: dipping a base steel sheet in a hot-dip Zn alloy plating bath to form a hot-dip Zn alloy plating layer on a surface of the base steel sheet; and contacting an aqueous solution containing a water-soluble corrosion inhibitor with a surface of the hot-dip Zn alloy plating layer to cool the base steel sheet and the hot-dip Zn alloy plating layer having a raised temperature through formation of the hot-dip Zn alloy plating layer. A temperature of the surface of the hot-dip Zn alloy plating layer when the aqueous solution is to be contacted with the surface of the hot-dip Zn alloy plating layer is equal to or more than 100° C. and equal to or less than a solidifying point of the plating layer. The aqueous solution containing the water-soluble corrosion inhibitor satisfies the Equation [{(Z0?Z1)/Z0}100?201.

Abstract: This hot-dip Zn-alloy-plated steel sheet comprises: a steel sheet; a hot-dip Zn-alloy-plated layer arranged on a surface of the steel sheet; and a complex oxide coating film arranged on a surface of the hot-dip Zn-alloy-plated layer. The complex oxide coating film includes vanadium and a constituent component of the hot-dip Zn-alloy-plated layer, and the entire surface of the coating film satisfies the following formula (1): S[Hydroxide]/(S[Hydroxide]+S[Oxide])×100?40. In formula (1): S[Oxide] is the area exhibited by a peak having a center at approximately 1022 eV ascribable to a Zn oxide in an intensity profile in XPS analysis of the surface of the complex oxide coating film; and S[Hydroxide] is the area exhibited by a peak having a center at approximately 1023 eV ascribable to a Zn hydroxide in an intensity profile in XPS analysis of the surface of the complex oxide coating film.

Abstract: This hot-dip Zn-alloy-plated steel sheet comprises: a steel sheet; and a hot-dip Zn-alloy-plated layer arranged on a surface of the steel sheet. The entire surface of the hot-dip Zn-alloy-plated layer satisfies the following formula (1): S[Zn(OH)2]/(S[Zn(OH)2]+S[Zn])×100?40. In formula (1): S[Zn] is the area exhibited by a peak having a center at approximately 1022 eV ascribable to metallic Zn in an intensity profile in XPS analysis of the surface of the hot-dip Zn-alloy-plated layer; and S[Zn(OH)2] is the area exhibited by a peak having a center at approximately 1023 eV ascribable to Zn(OH)2 in an intensity profile in XPS analysis of the surface of the hot-dip Zn-alloy-plated layer.

Abstract: A chemically converted steel sheet having a chemically converted coating film is made by coating a Zn-based plated steel sheet with a chemical conversion treatment solution and drying the same. The chemically converted coating film is constituted by a first chemically converted layer including V, Mo, and P, and a second chemically converted layer provided on said layer and including a group 4A metal oxygen acid salt, and the ratio of pentavalent V to all the Vs in the chemically converted coating film is 0.7 or greater. The chemical conversion treatment solution includes specific proportions of V, Mo, an amine, the group 4A metal oxygen acid salt, and P, and substantially does not include hydrophilic resins, fluorine, or silicon.

Abstract: A hot-dip Zn alloy plating layer is formed on a surface of a base steel sheet by immersing the base steel sheet in a hot-dip Zn alloy plating bath containing Al and Mg. An aqueous solution containing a polyatomic ion including Si4+ and/or a polyatomic ion including Cr6+ is then contacted with a surface of the hot-dip Zn alloy plating layer. All of the aqueous solution coating the surface of the hot-dip Zn alloy plating layer is removed with a squeeze roller. The aqueous solution contains the polyatomic ion in a concentration of 0.01 g/L or more in terms of atom of Si and Cr. A surface temperature of the hot-dip Zn alloy plating layer when the aqueous solution is contacted with the surface of the hot-dip Zn alloy plating layer is 100° C. or above and equal to or less than a solidifying point of the plating layer.

Abstract: A hot-dip Zn alloy plating layer is formed on a surface of a base steel sheet by immersing the base steel sheet in a hot-dip Zn alloy plating bath containing Al and Mg. An aqueous solution containing one of or two or more of polyatomic ions selected from the group consisting of a polyatomic ion including V5+, a polyatomic ion including Si4+, and a polyatomic ion including Cr6+ is then contacted with a surface of the hot-dip Zn alloy plating layer. The aqueous solution contains the polyatomic ion in a concentration of 0.01 g/L or more in terms of one of or two or more of atoms selected from the group consisting of V, Si, and Cr.

Abstract: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Abstract: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Abstract: This object aims to propose an optical information recording medium configured to make copyright protection possible, an information recording method for an optical information recording medium and a recording device. An optical information recording medium is proposed to have a recording area available for recording data by laser light, wherein the recording area is provided with a user data area and a management area.

Abstract: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

Abstract: A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.