Abstract: A magnetic recording medium is disclosed that includes a substrate; and an underlayer, a first magnetic layer, a non-magnetic coupling layer, a second magnetic layer, a third magnetic layer, a non-magnetic separation layer, and a fourth magnetic layer stacked in this order on the substrate. The first magnetic layer and the second magnetic layer are antiferromagnetically exchange-coupled, and the second magnetic layer and the third magnetic layer are ferromagnetically exchange-coupled. The third magnetic layer has an anisotropic magnetic field smaller than the anisotropic magnetic field of the second magnetic layer, and has a saturation magnetization greater than the saturation magnetization of the second magnetic layer.

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A novel synthesis of salinosporamide A is provided. Salinospoamide A as well as structurally related natural products, omuralide and lactacystin, have been shown to be proteasome inhibitors. Therefore, these compounds as well as analogues of these natural products may be useful in the treatment of proliferative diseases such as cancer, autoimmune diseases, diabetic retinopathy, etc. The invention provides for the synthesis of salinosporamide A as well as analogs thereof using a convenient point for derivatization of the bicyclic core. Pharmaceutical compositions and method of using the inventive compounds are also provided.

Abstract: A thin film transistor for characteristic inspection has a source, a gate and a drain connected to electrode terminals, namely to a source terminal, a gate terminal and a drain terminal, respectively. The electrode terminals are connected to a potential uniformalizing terminal via potential uniformalizing wiring in order to uniform the potentials of the electrode terminals. When conducting a characteristic inspection, a voltage is applied across the electrode terminals and the potential uniformalizing terminal to melt the potential uniformalizing wiring.

Abstract: A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.

Abstract: A magnetic recording medium is provided with a substrate, and a magnetic layer made of a CoCr-based alloy and having a multi-layer structure and disposed above the substrate. The multi-layer structure has a first magnetic layer disposed above the substrate and at least one second magnetic layer disposed on the first magnetic layer on an opposite side from the substrate. The first magnetic layer has a Cr-content larger than that of the second magnetic layer, and has a larger sum total content of nonmagnetic elements which are other than Cr and have a larger atomic radius than Co than the second magnetic layer.

Abstract: A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.

Abstract: A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

Abstract: A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process.

Abstract: A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).

Abstract: A liquid crystal display device is provided which includes an increased brightness of a display panel by effectively utilizing light from a light source. In the liquid crystal display device, a refractive surface of a light guide plate for guiding light that enters an inner portion from the light source, is composed of a plurality of slant dividing surfaces and connection surfaces provided between the dividing surfaces. A slant angle of the dividing surfaces is set to one at which the light projected from the light source is reflected in a direction substantially parallel with a plate of the light guide plate.

Abstract: A magnetic recording medium which is thermally stable and produces low media noise. By providing a plurality of intermediate layers made of a CoCr alloy of which saturation magnetic flux densities are controlled within a predetermined range, the magnetic recording medium simultaneously realizes both a high S/Nm and thermal stability.

Abstract: A method of and an apparatus for measuring mercury present in a hydrocarbon, wherein a gas (G) such as an air containing no mercury is allowed to flow through a column filled with an adsorbent material effective to adsorb mercury, and a hydrocarbon sample to be measured is injected into the column to allow the mercury contained therein to be adsorbed by the adsorbent material while removing a volatile component other than mercury therefrom, and measuring the amount of mercury using mercury measuring instrument.

Abstract: A method of and an apparatus for measuring mercury easily with stringent measuring conditions being alleviated are provided, in which while a gas (G) such as an air containing no mercury is allowed to flow through a column (1) filled with an adsorbent material (11) effective to adsorb mercury, hydrocarbon (S) (sample) to be measured is injected into the column to allow the mercury contained therein to be adsorbed by the adsorbent material (11) to remove a volatile component other than mercury that is subsequently measured by a mercury measuring instrument (4).

Abstract: A magnetic storage medium includes a magnetic layer of a Co alloy of a system Co—Cr—Pt—B—Cu, wherein the magnetic layer has a thickness t and a remnant magnetic flux density Br satisfying a relationship (t×Br) 2.0 nT·m≦(t×Br)≦7.0 nT·m, wherein the Co alloy contains, in addition to Co, Cr with a concentration &bgr; of 20-26 at % (20 at %≦&bgr;≦26 at %), Pt with a concentration &ggr; of 6-20 at % (6 at %≦&ggr;≦20 at %), B with a concentration &dgr; of 1-7 at % (1 at %≦&dgr;≦7 at %), and Cu with a concentration &egr; of 2-7 at % (2 at %≦&egr;≦7 at %).

Abstract: A liquid crystal display device is provided, which is applicable to either a back light type or a front light type. For the back light type, a flexible board, a first joint body of a back light transmission plate and a rod-like light transmission body, and a liquid crystal panel are successively piled up from bottom, and a LED is positioned facing to the rod-like light transmission body by bending a spur. For the front light type, a flexible board, a liquid crystal panel, and a second joint body of a front light transmission plate and a rod-like light transmission body, having the same shape as the first joint body, are successively piled up from bottom, and a LED is positioned facing to the rod-like light transmission body by bending a spur.

Abstract: An electronic circuit device has an insulating substrate and an integrated circuit having a surface disposed opposite to and confronting a surface of the insulating substrate to form a gap therebetween. An adhesive material is disposed in the gap between the insulating substrate and the integrated circuit. Bumps project from the surface of the integrated circuit towards the surface of the insulating substrate. Electrode patterns are electrically connected to the bumps to electrically connect the integrated circuit to the electrode patterns. An adhesion-reinforcing pattern is spaced-apart from and surrounded by the electrode patterns. The adhesion-reinforcing pattern is disposed on a portion of the surface of the insulating substrate confronting a portion of the surface of the integrated circuit from which the bumps do not project.