Patents by Inventor Atsushi Endo

Atsushi Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7494542
    Abstract: A pigment composition can be prepared by wet or dry milling a pigment selected from the group consisting of dianthraquinone pigments, diketopyrrolopyrrole pigments and a mixture thereof, in the presence of a compound represented by Formula 1: where Q denotes —NH(CH2)nNR1(R2) group or hydroxyl group, and R denotes —NH(CH2)nNR1(R2) group.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: February 24, 2009
    Assignee: Toyo Ink Mfg. Co., Ltd.
    Inventors: Atsushi Endo, Takeshi Sato, Akira Inoue
  • Patent number: 7470637
    Abstract: A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: December 30, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuhiro Okada, Toshiharu Nishimura, Atsushi Endo
  • Publication number: 20080292909
    Abstract: This magnetic recording medium has a substrate, a nonmagnetic granular layer formed above the substrate and a recording layer formed on the nonmagnetic granular layer. The nonmagnetic granular layer is made of CoCr alloy with an hcp or an fcc crystal structure in which a nonmagnetic material segregates virtually-columnar magnetic grains. The magnetic recording medium and the magnetic storage apparatus in which the medium is used have improved reading/writing performances.
    Type: Application
    Filed: May 2, 2008
    Publication date: November 27, 2008
    Applicant: FUJITSU LIMITED
    Inventors: Satoshi Igarashi, Akira Kikuchi, Isatake Kaitsu, Ryosaku Inamura, Kenji Sato, Shinya Sato, Hideaki Takahoshi, Atsushi Endo, Hisato Shibata
  • Patent number: 7368384
    Abstract: A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: May 6, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Atsushi Endo, Tomonori Fujiwara, Yuichiro Morozumi, Katsushige Harada, Shigeru Nakajima, Dong-Kyun Choi, Haruhiko Furuya, Kazuo Yabe
  • Publication number: 20080083372
    Abstract: A heat processing apparatus for a semiconductor process includes a reaction tube including a process field configured to store a plurality of target substrates stacked at intervals. A gas supply duct is integrally provided outside the wall of the reaction tube to extend vertically in a range that covers the process field. A plurality of gas delivery holes are formed in the side portion of the wall of the reaction tube, to be vertically arrayed in a range that covers the process field and communicate with the gas supply duct. A gas supply system is connected to a bottom portion of the gas supply duct to supply a process gas to the process field through the gas supply duct and the plurality of gas delivery holes.
    Type: Application
    Filed: August 2, 2007
    Publication date: April 10, 2008
    Inventors: Hisashi Inoue, Atsushi Endo
  • Publication number: 20080035933
    Abstract: A thin film transistor array substrate includes a polysilicon layer having a predetermined pattern shape formed over a substrate, a first gate insulating film provided over the substrate and on the surface of the polysilicon layer and having a same polished surface as the surface of the polysilicon layer and a second gate insulating film formed to cover the polysilicon layer and the first gate insulating film.
    Type: Application
    Filed: August 3, 2007
    Publication date: February 14, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hitoshi Nagata, Atsushi Endo, Shinsuke Yura
  • Publication number: 20080008566
    Abstract: A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.
    Type: Application
    Filed: July 3, 2007
    Publication date: January 10, 2008
    Inventors: Atsushi Endo, Yoshiyuki Fujita, Shinji Miyazaki
  • Publication number: 20070272125
    Abstract: A pigment composition can be prepared by wet or dry milling a pigment selected from the group consisting of dianthraquinone pigments, diketopyrrolopyrrole pigments and a mixture thereof, in the presence of a compound represented by Formula 1: where Q denotes —NH(CH2)nNR1(R2) group or hydroxyl group, and R denotes —NH(CH2)nNR1(R2) group.
    Type: Application
    Filed: May 24, 2007
    Publication date: November 29, 2007
    Applicant: TOYO INK MFG. CO., LTD.
    Inventors: Atsushi Endo, Takeshi Sato, Akira Inoue
  • Publication number: 20070275269
    Abstract: A magnetic recording medium is disclosed that includes a substrate; and an underlayer, a first magnetic layer, a non-magnetic coupling layer, a second magnetic layer, a third magnetic layer, a non-magnetic separation layer, and a fourth magnetic layer stacked in this order on the substrate. The first magnetic layer and the second magnetic layer are antiferromagnetically exchange-coupled, and the second magnetic layer and the third magnetic layer are ferromagnetically exchange-coupled. The third magnetic layer has an anisotropic magnetic field smaller than the anisotropic magnetic field of the second magnetic layer, and has a saturation magnetization greater than the saturation magnetization of the second magnetic layer.
    Type: Application
    Filed: October 19, 2006
    Publication date: November 29, 2007
    Inventors: Hideaki Takahoshi, Atsushi Endo, Reiko Murao, Shinya Sato, Akira Kikuchi
  • Patent number: 7156923
    Abstract: A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
    Type: Grant
    Filed: November 12, 2004
    Date of Patent: January 2, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Kohei Fukushima, Atsushi Endo, Tatsuo Nishita, Takeshi Kumagai
  • Publication number: 20060287520
    Abstract: A novel synthesis of salinosporamide A is provided. Salinospoamide A as well as structurally related natural products, omuralide and lactacystin, have been shown to be proteasome inhibitors. Therefore, these compounds as well as analogues of these natural products may be useful in the treatment of proliferative diseases such as cancer, autoimmune diseases, diabetic retinopathy, etc. The invention provides for the synthesis of salinosporamide A as well as analogs thereof using a convenient point for derivatization of the bicyclic core. Pharmaceutical compositions and method of using the inventive compounds are also provided.
    Type: Application
    Filed: May 16, 2006
    Publication date: December 21, 2006
    Inventors: Samuel Danishefsky, Atsushi Endo
  • Publication number: 20060273422
    Abstract: A thin film transistor for characteristic inspection has a source, a gate and a drain connected to electrode terminals, namely to a source terminal, a gate terminal and a drain terminal, respectively. The electrode terminals are connected to a potential uniformalizing terminal via potential uniformalizing wiring in order to uniform the potentials of the electrode terminals. When conducting a characteristic inspection, a voltage is applied across the electrode terminals and the potential uniformalizing terminal to melt the potential uniformalizing wiring.
    Type: Application
    Filed: February 24, 2006
    Publication date: December 7, 2006
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Atsushi ENDO, Takumi NAKAHATA
  • Publication number: 20060134811
    Abstract: A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 22, 2006
    Inventors: Daisuke Suzuki, Masayuki Hasegawa, Atsushi Endo
  • Patent number: 7049013
    Abstract: A magnetic recording medium is provided with a substrate, and a magnetic layer made of a CoCr-based alloy and having a multi-layer structure and disposed above the substrate. The multi-layer structure has a first magnetic layer disposed above the substrate and at least one second magnetic layer disposed on the first magnetic layer on an opposite side from the substrate. The first magnetic layer has a Cr-content larger than that of the second magnetic layer, and has a larger sum total content of nonmagnetic elements which are other than Cr and have a larger atomic radius than Co than the second magnetic layer.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: May 23, 2006
    Assignee: Fujitsu Limited
    Inventors: Kazuhisa Shida, Atsushi Endo, Chiaki Okuyama, Akira Kikuchi
  • Publication number: 20060081182
    Abstract: A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.
    Type: Application
    Filed: October 11, 2005
    Publication date: April 20, 2006
    Inventors: Mitsuhiro Okada, Atsushi Endo, Toshiharu Nishimura, Kazuhide Hasebe
  • Publication number: 20060068598
    Abstract: A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.
    Type: Application
    Filed: March 28, 2005
    Publication date: March 30, 2006
    Inventors: Mitsuhiro Okada, Toshiharu Nishimura, Atsushi Endo
  • Publication number: 20060042544
    Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.
    Type: Application
    Filed: August 24, 2005
    Publication date: March 2, 2006
    Inventors: Kazuhide Hasebe, Nobutake Nodera, Atsushi Endo, Makoto Umeki, Katsumi Nishimura, Masakazu Minami, Makoto Yoshida
  • Publication number: 20050284575
    Abstract: A processing system of the present invention includes: a reaction container in which a substrate to be processed is placed, a process-gas supplying mechanism that supplies a process gas into the reaction container at a process to the substrate, a cleaning-gas supplying mechanism that supplies a corrosive cleaning gas into the reaction container at a cleaning process, a gas-discharging-way member connected to the reaction chamber, a heating unit that heats a specific portion of the reaction container and the gas-discharging-way member, a temperature detecting unit that detects a temperature of the specific portion, a temperature controlling unit that controls the heating unit based on a detection value detected by the temperature detecting unit in such a manner that the specific portion becomes to a predetermined target temperature, and a temperature changing unit that changes the target temperature between at the process to the substrate and at the cleaning process.
    Type: Application
    Filed: August 4, 2005
    Publication date: December 29, 2005
    Inventors: Kazuhide Hasebe, Atsushi Endo, Mitsuhiro Okada, Jun Ogawa, Akihito Yamamoto, Takashi Nakao, Masaki Kamimura, Yukihiro Ushiku
  • Patent number: D567693
    Type: Grant
    Filed: May 2, 2007
    Date of Patent: April 29, 2008
    Assignee: Tokyo Bell Seisakusho Co., Ltd.
    Inventors: Kyoji Ichimura, Atsushi Endo, Kazuharu Seki
  • Patent number: D586768
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: February 17, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Hisashi Inoue, Atsushi Endo