Patents by Inventor Atsushi Fukumoto

Atsushi Fukumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210087657
    Abstract: A method of manufacturing a fin material made of an aluminum alloy for heat exchangers with no fin buckling deformation and having excellent buckling resistance in a temperature range of 400° C. to 580° C. before a filler alloy melts at the time of brazing is provided. The fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 ?m is 3.0×106 particles/mm2 or more, and an amount of solid solution of Mn is 0.3 mass % or less.
    Type: Application
    Filed: December 1, 2020
    Publication date: March 25, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yusuke Ohashi, Atsushi Fukumoto, Shogo Yamada, Shinichiro Takise, Takahiro Shinoda
  • Publication number: 20210082952
    Abstract: A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.
    Type: Application
    Filed: August 10, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Atsushi Fukumoto, Keisuke Suda, Takayuki Ito
  • Publication number: 20210071970
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, obtained by brazing: a tube material comprising at least a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, 0.05 to 3.00% of Cu, and 0.40 to 2.00% of Mn, and a sacrificial anticorrosion material made of aluminum alloy comprising 2.00 to 6.00% of Zn, with a Si content of less than 0.10%, clad on the inner side surface of the core material; and a fin material comprising a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, and 0.40 to 2.00% of Mn, with a Zn content of less than 0.05%, and a brazing material clad on both surfaces of the core material, made of aluminum alloy comprising 3.00 to 13.00% of Si, with a Zn content of less than 0.05%.
    Type: Application
    Filed: March 27, 2019
    Publication date: March 11, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Publication number: 20210033359
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, which is a heat exchanger installed in an exhaust gas recirculation system of an internal combustion engine to cool the exhaust gas comprises a tube provided with a sacrificial anticorrosion material on a side along which the exhaust gas passes, and a fin brazed to the surface side of the sacrificial anticorrosion material of the tube, the fin having a pitting potential higher than the pitting potential of the surface of the sacrificial anticorrosion material of the tube. According to the disclosure, an aluminum alloy heat exchanger for an exhaust gas recirculation system having a long service life with effective function of the sacrificial anticorrosion even under an acidic environment in which an oxide film is weakened as a whole and pitting corrosion is unlikely to occur can be provided.
    Type: Application
    Filed: March 27, 2019
    Publication date: February 4, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Publication number: 20210025663
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, the heat exchanger obtained by brazing: a tube material comprising a core material comprising 0.05 mass % to 1.50 mass % of Si, 0.05 mass % to 3.00 mass % of Cu, and 0.40 mass % to 2.00 mass % of Mn, and a sacrificial anticorrosion material comprising 2.00 mass % to 6.00 mass % of Zn, clad on an inner side surface of the core material; and a fin material comprising a core material comprising 0.05 mass to 1.50 mass % of Si, and 0.40 mass % to 2.00 mass % of Mn, and a brazing material comprising 3.00 mass % to 13.00 mass % of Si, clad on both surfaces of the core material; the heat exchanger having a ratio of a surface area Sb (mm2) of the fin material to a surface area Sa (mm2) of the sacrificial anticorrosion material of less than 200%.
    Type: Application
    Filed: March 27, 2019
    Publication date: January 28, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Patent number: 10857629
    Abstract: An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: December 8, 2020
    Assignee: UACJ Corporation
    Inventors: Atsushi Fukumoto, Yasunaga Itoh, Shoichi Sakoda, Tomoki Yamayoshi
  • Patent number: 10737357
    Abstract: A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [?m] is the thickness of the intermediate material, and tf [?m] is the thickness of the filler metal: tf?10.15×ln(M×ti)+3.7.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: August 11, 2020
    Assignee: UACJ CORPORATION
    Inventors: Yasunaga Itoh, Shoichi Sakoda, Atsushi Fukumoto
  • Publication number: 20200239989
    Abstract: There are provided: an aluminum alloy fin material for a heat exchanger, the aluminum alloy fin material including an aluminum alloy including 0.70 to 1.50 mass % Si, 0.05 to 2.00 mass % Fe, 1.0 to 2.0 mass % Mn, 0.5 to 4.0 mass % Zn, with a balance consisting of Al and inevitable impurities, in which before brazing heating, the amount of solid solution Si is 0.60 mass % or less, and the amount of solid solution Mn is 0.60 mass % or less, and in which a recrystallization temperature in a temperature rise process during the brazing heating is 450° C. or less; a method of producing the aluminum alloy fin material; a heat exchanger using the aluminum alloy fin material; and a method of producing the heat exchanger.
    Type: Application
    Filed: September 9, 2016
    Publication date: July 30, 2020
    Inventors: Makoto Ando, Atsushi Fukumoto
  • Publication number: 20190345587
    Abstract: An aluminum alloy fin material for a heat exchanger is made of an aluminum alloy including 0.05 mass % to 0.5 mass % of Si, 0.05 mass % to 0.7 mass % of Fe, 10 mass % to 2.0 mass % of Mn, 0.5 mass % to 1.5 mass % of Cu, and 3.0 mass % to 7.0 mass % of Zn, with the balance being Al and unavoidable impurities. In an L-ST plane thereof, second-phase grains having an equivalent circle diameter equal to or more than 0.030 ?m and less than 0.50 ?m have a perimeter density of 0.30 ?m/?m2 or more, second-phase grains having an equivalent circle diameter equal to or more than 0.50 ?m have a perimeter density of 0.030 ?m/?m2 or more, and specific resistance thereof at 20° C. is 0.030 ??m or more.
    Type: Application
    Filed: December 1, 2017
    Publication date: November 14, 2019
    Applicant: UACJ Corporation
    Inventors: Wataru Nakagawa, Atsushi Fukumoto, Junichi Mochizuki, Tatsuya Ide
  • Publication number: 20190326310
    Abstract: A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.
    Type: Application
    Filed: March 4, 2019
    Publication date: October 24, 2019
    Inventors: Yoshiaki FUKUZUMI, Keisuke SUDA, Fumiki AISO, Atsushi FUKUMOTO
  • Publication number: 20190323788
    Abstract: A method for producing an aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as “%” below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 ?m or more; and a ratio R1/R2 is 0.30 or less, wherein R1 (?m) is a grain size in a thickness direction and R2 (?m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 24, 2019
    Applicant: UACJ CORPORATION
    Inventors: Makoto ANDO, Atsushi FUKUMOTO, Akio NIIKURA
  • Patent number: 10436528
    Abstract: An aluminum alloy brazing sheet which is thin but has excellent weldability and post-brazing strength. An aluminum alloy brazing sheet having a core material comprising an aluminum alloy, an Al—Si based brazing filler metal clad on one surface of the core material and a sacrificial anode material clad on the other surface of the core material: wherein the core material comprises certain amounts of Si, Fe, Cu and Mn and certain amounts of one, two or more selected from Ti, Zr, Cr and V; the sacrificial anode material comprises certain amounts of Si, Fe, Mg and Zn; in a cross section parallel to the longitudinal direction and along the thickness direction, the interface between the core material and the sacrificial anode material includes 300 pieces/mm or less of an Al—Mg—Cu based intermetallic compound; and the core material and the sacrificial anode material have an unrecrystallized structure.
    Type: Grant
    Filed: June 12, 2014
    Date of Patent: October 8, 2019
    Assignee: UACJ Corporation
    Inventors: Atsushi Fukumoto, Akio Niikura
  • Patent number: 10438966
    Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: October 8, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Tomonari Shioda, Junya Fujita, Tatsuro Nishimoto, Yoshiaki Fukuzumi, Atsushi Fukumoto, Hajime Nagano
  • Publication number: 20190291218
    Abstract: A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [?m] is the thickness of the intermediate material, and tf [?m] is the thickness of the filler metal: tf?10.15×ln(M×ti)+3.7.
    Type: Application
    Filed: May 24, 2017
    Publication date: September 26, 2019
    Inventors: Yasunaga ITOH, Shoichi SAKODA, Atsushi FUKUMOTO
  • Publication number: 20190184501
    Abstract: An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.
    Type: Application
    Filed: August 24, 2017
    Publication date: June 20, 2019
    Applicant: UACJ Corporation
    Inventors: Atsushi Fukumoto, Yasunaga Itoh, Shoichi Sakoda, Tomoki Yamayoshi
  • Publication number: 20190099841
    Abstract: Provided are: an aluminum alloy material for a heat exchanger, including an aluminum alloy including 0.02 to 0.40 mass % Si, 1.0 to 2.5 mass % Cu, 0.5 to 2.0 mass % Mn, and a balance of Al and inevitable impurities, in which the number density of an Al—Cu—Mn-based intermetallic compound having an equivalent circle diameter of 0.1 to 1.0 ?m is 1.0×106/mm2 or more; and a method for producing the aluminum alloy material.
    Type: Application
    Filed: March 23, 2017
    Publication date: April 4, 2019
    Inventors: Wataru NARITA, Atsushi FUKUMOTO
  • Publication number: 20190084094
    Abstract: An aluminum alloy clad material includes: a core material; and a sacrificial anode material layer clad on one surface or both surfaces of the core material. Each of the core material and the sacrificial anode material layer has a predetermined composition. In the core material, the number density of an Al—Mn-based intermetallic compound having an equivalent circle diameter of 0.1 ?m or more is 1.0×105 particles/mm2 or more, and the number density of Al2Cu having an equivalent circle diameter of 0.1 ?m or more is 1.0×105 particles/mm2 or less. In the sacrificial anode material layer, the number density of a Mg—Si-based crystallized product having an equivalent circle diameter of 0.1 to 5.0 ?m is 100 to 150,000 particles/mm2, and the number density of a Mg—Si-based crystallized product having an equivalent circle diameter of more than 5.0 ?m and 10.0 ?m or less is 5 particles/mm2 or less.
    Type: Application
    Filed: March 30, 2017
    Publication date: March 21, 2019
    Inventors: Hayaki Teramoto, Manabu Hasegawa, Michiyasu Yamamoto, Yosuke Uchida, Wataru Narita, Yoshihiko Kyou, Atsushi Fukumoto, Yoshiyuki Ooya
  • Publication number: 20190067317
    Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.
    Type: Application
    Filed: March 7, 2018
    Publication date: February 28, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Tomonari SHIODA, Junya FUJITA, Tatsuro NISHIMOTO, Yoshiaki FUKUZUMI, Atsushi FUKUMOTO, Hajime NAGANO
  • Patent number: 10186521
    Abstract: According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: January 22, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Atsushi Fukumoto, Fumiki Aiso, Hajime Nagano, Takuo Ohashi
  • Patent number: 10161693
    Abstract: An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; more than 1.0 mass % but not more than 2.0 mass % of Fe; 0.4 to 1.0 mass % of Mn; and 0.4 to 1.0 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 1×105 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB (N/mm2), a tensile strength after braze-heating, TSA (N/mm2), and a fin sheet thickness, t (?m), satisfy: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less; and a method of producing the same.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: December 25, 2018
    Assignee: UACJ CORPORATION
    Inventors: Atsushi Fukumoto, Junichi Mochizuki, Akio Niikura