Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A driving assistance apparatus configured to support a driving of a vehicle at a time of pulling out of the vehicle, the driving assistance apparatus including: a control section configured to determine a movement path from a parking space to a predetermined position of a road region, and run the vehicle along the movement path on a basis of surroundings information of the vehicle when pulling out the vehicle from the parking space to the road region, wherein the control section leaves an accelerator operation for the vehicle to a user while automatically controlling a steering operation for the vehicle at least in a section in the movement path, and switches from an automated driving mode to a manual driving mode in response to the steering operation that is performed by the user when the vehicle travels in the section.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer including a plurality of metal atoms on a substrate, and forming a first layer including a plurality of silicon atoms and a plurality of nitrogen atoms on the semiconductor layer. The method further includes transferring at least some of the metal atoms in the semiconductor layer into the first layer. and removing the first layer after transferring the at least some of the metal atoms in the semiconductor layer into the first layer. Furthermore, a ratio of a number of the nitrogen atoms relative to a number of the silicon atoms and the nitrogen atoms in the first layer is smaller than 4/7.

Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.

Abstract: An aluminum alloy fin material for a heat exchanger is made of an aluminum alloy including 0.05 mass % to 0.5 mass % of Si, 0.05 mass % to 0.7 mass % of Fe, 10 mass % to 2.0 mass % of Mn, 0.5 mass % to 1.5 mass % of Cu, and 3.0 mass % to 7.0 mass % of Zn, with the balance being Al and unavoidable impurities. In an L-ST plane thereof, second-phase grains having an equivalent circle diameter equal to or more than 0.030 ?m and less than 0.50 ?m have a perimeter density of 0.30 ?m/?m2 or more, second-phase grains having an equivalent circle diameter equal to or more than 0.50 ?m have a perimeter density of 0.030 ?m/?m2 or more, and specific resistance thereof at 20° C. is 0.030 ??m or more.

Abstract: A method of producing antimony trisulfide is provided, including: mixing metal antimony powder, antimony trioxide powder, and sulfur powder to provide a mixture; and heating the mixture.

Abstract: A semiconductor device according to the present embodiment comprises a stack including a plurality of electrode films stacked in a first direction to be separated from each other. A column portion extends in the stack in the first direction and includes a semiconductor layer, and has memory cells at respective intersections of the semiconductor layer and the electrode films. A dividing portion extends in the stack in the first direction and a second direction crossing the first direction, divides the electrode films in a third direction crossing the first direction and the second direction, and includes an insulator. A first film is provided between the insulator and an end surface in the third direction of each of the electrode films and contains a first metal and silicon.

Abstract: A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.

Abstract: According to an embodiment, a semiconductor manufacturing method includes forming a first seed layer on an underlying layer with a first gas that is an aminosilane gas. The method further includes forming a first amorphous silicon layer on the first seed layer with a second gas that is a silane gas not containing an amino group. The method further includes forming a second seed layer containing impurities on the first amorphous silicon layer with a third gas that is an aminosilane gas. The method further includes forming a second amorphous silicon layer on the second seed layer with a fourth gas that is a silane gas not containing an amino group.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer including a plurality of metal atoms on a substrate, and forming a first layer including a plurality of silicon atoms and a plurality of nitrogen atoms on the semiconductor layer. The method further includes transferring at least some of the metal atoms in the semiconductor layer into the first layer. and removing the first layer after transferring the at least some of the metal atoms in the semiconductor layer into the first layer. Furthermore, a ratio of a number of the nitrogen atoms relative to a number of the silicon atoms and the nitrogen atoms in the first layer is smaller than 4/7.

Abstract: A method for producing an aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as “%” below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 ?m or more; and a ratio R1/R2 is 0.30 or less, wherein R1 (?m) is a grain size in a thickness direction and R2 (?m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.

Abstract: A semiconductor device according to one embodiment includes a substrate, a wiring layer provided on the substrate and including source lines, a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked on the wiring layer, a cell film provided in the stacked body, a semiconductor film facing the cell film in the stacked body, and a diffusion film being in contact with the source lines in the wiring layer and being in contact with the semiconductor film in the stacked body. The diffusion film includes impurities and a top end portion of the diffusion film is at a higher position than a lowermost conductive layer among the conductive layers.

Abstract: A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.

Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.

Abstract: An aluminum alloy material comprises: Si: less than 0.2 mass %, Fe: 0.1 to 0.3 mass %, Cu: 1.0 to 2.5 mass %, Mn: 1.0 to 1.6 mass %, and Mg: 0.1 to 1.0 mass %, the balance being Al and incidental impurities. A number density of Al—Mn compound having a circle equivalent diameter of not less than 0.1 ?m is not less than 1.0×105 mm?2, and a number density of Al2Cu having a circle equivalent diameter of not less than 0.1 ?m is not more than 1.0×105 mm?2.

Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.

Abstract: An aluminum alloy heat exchanger includes a core material formed of an aluminum alloy including Mn of 0.60 to 2.00 mass % and Cu of 1.00 mass % or less, with the balance being Al and inevitable impurities, and a sacrificial anode material formed of an aluminum alloy including Zn of 2.50 to 10.00 mass %, with the balance being Al and inevitable impurities. Pitting potential of a sacrificial anode material surface of a tube of the aluminum alloy heat exchanger in a 5% NaCl solution is ?800 (mV vs Ag/AgCl) or less, and pitting potential of an aluminum fin of the aluminum alloy heat exchanger in a 5% NaCl solution is equal to or more than the pitting potential of the sacrificial anode material surface of the tube of the aluminum alloy heat exchanger in a 5% NaCl solution.

Abstract: An aluminum alloy heat exchanger includes a core material formed of an aluminum alloy comprising Mn of 0.60 to 2.00 mass % and Cu of 1.00 mass % or less, with the balance being Al and inevitable impurities, and a sacrificial anode material formed of an aluminum alloy comprising Zn of 2.50 to 10.00 mass %, with the balance being Al and inevitable impurities. Pitting potential of a sacrificial anode material surface of a tube of the aluminum alloy heat exchanger in a 5% NaCl solution is ?800 (mV vs Ag/AgCl) or less, and pitting potential of an aluminum fin of the aluminum alloy heat exchanger in a 5% NaCl solution is less than the pitting potential of the sacrificial anode material surface of the tube of the aluminum alloy heat exchanger in a 5% NaCl solution.

Abstract: A method of manufacturing a fin material made of an aluminum alloy for heat exchangers with no fin buckling deformation and having excellent buckling resistance in a temperature range of 400° C. to 580° C. before a filler alloy melts at the time of brazing is provided. The fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 ?m is 3.0×106 particles/mm2 or more, and an amount of solid solution of Mn is 0.3 mass % or less.

Abstract: A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.