Patents by Inventor Atsushi Fukumoto

Atsushi Fukumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220379925
    Abstract: A driving assistance apparatus configured to support a driving of a vehicle at a time of pulling out of the vehicle, the driving assistance apparatus including: a control section configured to determine a movement path from a parking space to a predetermined position of a road region, and run the vehicle along the movement path on a basis of surroundings information of the vehicle when pulling out the vehicle from the parking space to the road region, wherein the control section leaves an accelerator operation for the vehicle to a user while automatically controlling a steering operation for the vehicle at least in a section in the movement path, and switches from an automated driving mode to a manual driving mode in response to the steering operation that is performed by the user when the vehicle travels in the section.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 1, 2022
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Takehito SATO, Atsushi NOJIRI, Satoshi FUKUMOTO, Yoshimasa OKABE
  • Publication number: 20220326578
    Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.
    Type: Application
    Filed: May 15, 2020
    Publication date: October 13, 2022
    Inventors: TAKASHI SAKAIRI, TOMOAKI HONDA, TSUYOSHI OKAZAKI, KEIICHI MAEDA, CHIHO ARAKI, KATSUNORI DAI, SHUNSUKE NARUI, KUNIHIKO HIKICHI, KOUTA FUKUMOTO, TOSHIAKI OKADA, TAKUMA MATSUNO, YUU KAWAGUCHI, YUUJI ADACHI, KOICHI AMARI, HIDEKI KAWAGUCHI, SEIYA HARAGUCHI, TAKAYOSHI MASAKI, TAKUYA FUJINO, TADAYUKI DOFUKU, YOSUKE TAKITA, KAZUHIRO TAMURA, ATSUSHI TANAKA
  • Publication number: 20220301870
    Abstract: According to an embodiment, a semiconductor manufacturing method includes forming a first seed layer on an underlying layer with a first gas that is an aminosilane gas. The method further includes forming a first amorphous silicon layer on the first seed layer with a second gas that is a silane gas not containing an amino group. The method further includes forming a second seed layer containing impurities on the first amorphous silicon layer with a third gas that is an aminosilane gas. The method further includes forming a second amorphous silicon layer on the second seed layer with a fourth gas that is a silane gas not containing an amino group.
    Type: Application
    Filed: September 14, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Atsushi FUKUMOTO, Fumiki AISO
  • Publication number: 20220302158
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a semiconductor layer including a plurality of metal atoms on a substrate, and forming a first layer including a plurality of silicon atoms and a plurality of nitrogen atoms on the semiconductor layer. The method further includes transferring at least some of the metal atoms in the semiconductor layer into the first layer. and removing the first layer after transferring the at least some of the metal atoms in the semiconductor layer into the first layer. Furthermore, a ratio of a number of the nitrogen atoms relative to a number of the silicon atoms and the nitrogen atoms in the first layer is smaller than 4/7.
    Type: Application
    Filed: August 4, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Aki MAEDA, Noritaka ISHIHARA, Atsushi FUKUMOTO, Shuto YAMASAKA
  • Publication number: 20220297357
    Abstract: A molding machine includes: a tie bar connected continuously to any one of a stationary platen and a movable platen, and including an engagement groove; a first engagement member configured to engage with or move away from the engagement groove of the tie bar; a second engagement member configured to engage with or move away from the engagement groove of the tie bar, and configured to be displaceable in an axial direction of the tie bar; a force transmission member located opposite the first engagement member across the second engagement member, and including a pressure surface to press the second engagement member and a through hole in which the tie bar is inserted; and a drive mechanism configured to use the force transmission member to cause the second engagement member to be displaceable in the axial direction of the tie bar with respect to the first engagement member.
    Type: Application
    Filed: December 22, 2021
    Publication date: September 22, 2022
    Inventors: Atsushi TSUKAMOTO, Kenji FUKUMOTO, Shizuo JINNO, Hisanaga TAJIMA, Hiroki HASEGAWA
  • Patent number: 11408690
    Abstract: A method for producing an aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as “%” below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 ?m or more; and a ratio R1/R2 is 0.30 or less, wherein R1 (?m) is a grain size in a thickness direction and R2 (?m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: August 9, 2022
    Assignee: UACJ CORPORATION
    Inventors: Makoto Ando, Atsushi Fukumoto, Akio Niikura
  • Publication number: 20220077184
    Abstract: A semiconductor device according to one embodiment includes a substrate, a wiring layer provided on the substrate and including source lines, a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked on the wiring layer, a cell film provided in the stacked body, a semiconductor film facing the cell film in the stacked body, and a diffusion film being in contact with the source lines in the wiring layer and being in contact with the semiconductor film in the stacked body. The diffusion film includes impurities and a top end portion of the diffusion film is at a higher position than a lowermost conductive layer among the conductive layers.
    Type: Application
    Filed: June 17, 2021
    Publication date: March 10, 2022
    Applicant: Kioxia Corporation
    Inventors: Atsushi FUKUMOTO, Junya FUJITA, Osamu ARISUMI, Fan WEN, Takayuki ITO
  • Publication number: 20220077170
    Abstract: A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.
    Type: Application
    Filed: November 12, 2021
    Publication date: March 10, 2022
    Inventors: Yoshiaki FUKUZUMI, Keisuke SUDA, Fumiki AISO, Atsushi FUKUMOTO
  • Publication number: 20210331263
    Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.
    Type: Application
    Filed: July 6, 2021
    Publication date: October 28, 2021
    Applicant: UACJ Corporation
    Inventors: Tomoki Yamayoshi, Atsushi Fukumoto
  • Patent number: 11136652
    Abstract: An aluminum alloy material comprises: Si: less than 0.2 mass %, Fe: 0.1 to 0.3 mass %, Cu: 1.0 to 2.5 mass %, Mn: 1.0 to 1.6 mass %, and Mg: 0.1 to 1.0 mass %, the balance being Al and incidental impurities. A number density of Al—Mn compound having a circle equivalent diameter of not less than 0.1 ?m is not less than 1.0×105 mm?2, and a number density of Al2Cu having a circle equivalent diameter of not less than 0.1 ?m is not more than 1.0×105 mm?2.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: October 5, 2021
    Assignee: UACJ CORPORATION
    Inventors: Wataru Narita, Atsushi Fukumoto
  • Patent number: 11090749
    Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: August 17, 2021
    Assignee: UACJ CORPORATION
    Inventors: Tomoki Yamayoshi, Atsushi Fukumoto
  • Publication number: 20210207901
    Abstract: An aluminum alloy heat exchanger includes a core material formed of an aluminum alloy including Mn of 0.60 to 2.00 mass % and Cu of 1.00 mass % or less, with the balance being Al and inevitable impurities, and a sacrificial anode material formed of an aluminum alloy including Zn of 2.50 to 10.00 mass %, with the balance being Al and inevitable impurities. Pitting potential of a sacrificial anode material surface of a tube of the aluminum alloy heat exchanger in a 5% NaCl solution is ?800 (mV vs Ag/AgCl) or less, and pitting potential of an aluminum fin of the aluminum alloy heat exchanger in a 5% NaCl solution is equal to or more than the pitting potential of the sacrificial anode material surface of the tube of the aluminum alloy heat exchanger in a 5% NaCl solution.
    Type: Application
    Filed: May 17, 2019
    Publication date: July 8, 2021
    Applicants: UACJ CORPORATION, DENSO CORPORATION
    Inventors: Tomohiro Shoji, Yoshihiko Kyo, Atsushi Fukumoto, Yoshiyuki Oya, Takahiro Shinoda, Koichi Nakashita, Naoto Goto
  • Publication number: 20210199395
    Abstract: An aluminum alloy heat exchanger includes a core material formed of an aluminum alloy comprising Mn of 0.60 to 2.00 mass % and Cu of 1.00 mass % or less, with the balance being Al and inevitable impurities, and a sacrificial anode material formed of an aluminum alloy comprising Zn of 2.50 to 10.00 mass %, with the balance being Al and inevitable impurities. Pitting potential of a sacrificial anode material surface of a tube of the aluminum alloy heat exchanger in a 5% NaCl solution is ?800 (mV vs Ag/AgCl) or less, and pitting potential of an aluminum fin of the aluminum alloy heat exchanger in a 5% NaCl solution is less than the pitting potential of the sacrificial anode material surface of the tube of the aluminum alloy heat exchanger in a 5% NaCl solution.
    Type: Application
    Filed: May 17, 2019
    Publication date: July 1, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Tomohiro Shoji, Yoshihiko Kyo, Atsushi Fukumoto, Yoshiyuki Oya, Takahiro Shinoda, Koichi Nakashita, Naoto Goto
  • Publication number: 20210087657
    Abstract: A method of manufacturing a fin material made of an aluminum alloy for heat exchangers with no fin buckling deformation and having excellent buckling resistance in a temperature range of 400° C. to 580° C. before a filler alloy melts at the time of brazing is provided. The fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 ?m is 3.0×106 particles/mm2 or more, and an amount of solid solution of Mn is 0.3 mass % or less.
    Type: Application
    Filed: December 1, 2020
    Publication date: March 25, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yusuke Ohashi, Atsushi Fukumoto, Shogo Yamada, Shinichiro Takise, Takahiro Shinoda
  • Publication number: 20210082952
    Abstract: A semiconductor device according to one embodiment is provided with: a substrate; a stacked body provided on the substrate; and a pillar portion penetrating the stacked body. The pillar portion has a first film including a first material and a second material, and a second film provided on an inner side of the first film. The second material is a material that increases an etching rate of the first material as a composition rate relative to the first material is higher, and the composition rate gradually decreases from an upper part to a lower part of the first film.
    Type: Application
    Filed: August 10, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Atsushi Fukumoto, Keisuke Suda, Takayuki Ito
  • Publication number: 20210071970
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, obtained by brazing: a tube material comprising at least a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, 0.05 to 3.00% of Cu, and 0.40 to 2.00% of Mn, and a sacrificial anticorrosion material made of aluminum alloy comprising 2.00 to 6.00% of Zn, with a Si content of less than 0.10%, clad on the inner side surface of the core material; and a fin material comprising a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, and 0.40 to 2.00% of Mn, with a Zn content of less than 0.05%, and a brazing material clad on both surfaces of the core material, made of aluminum alloy comprising 3.00 to 13.00% of Si, with a Zn content of less than 0.05%.
    Type: Application
    Filed: March 27, 2019
    Publication date: March 11, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Publication number: 20210033359
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, which is a heat exchanger installed in an exhaust gas recirculation system of an internal combustion engine to cool the exhaust gas comprises a tube provided with a sacrificial anticorrosion material on a side along which the exhaust gas passes, and a fin brazed to the surface side of the sacrificial anticorrosion material of the tube, the fin having a pitting potential higher than the pitting potential of the surface of the sacrificial anticorrosion material of the tube. According to the disclosure, an aluminum alloy heat exchanger for an exhaust gas recirculation system having a long service life with effective function of the sacrificial anticorrosion even under an acidic environment in which an oxide film is weakened as a whole and pitting corrosion is unlikely to occur can be provided.
    Type: Application
    Filed: March 27, 2019
    Publication date: February 4, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Publication number: 20210025663
    Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, the heat exchanger obtained by brazing: a tube material comprising a core material comprising 0.05 mass % to 1.50 mass % of Si, 0.05 mass % to 3.00 mass % of Cu, and 0.40 mass % to 2.00 mass % of Mn, and a sacrificial anticorrosion material comprising 2.00 mass % to 6.00 mass % of Zn, clad on an inner side surface of the core material; and a fin material comprising a core material comprising 0.05 mass to 1.50 mass % of Si, and 0.40 mass % to 2.00 mass % of Mn, and a brazing material comprising 3.00 mass % to 13.00 mass % of Si, clad on both surfaces of the core material; the heat exchanger having a ratio of a surface area Sb (mm2) of the fin material to a surface area Sa (mm2) of the sacrificial anticorrosion material of less than 200%.
    Type: Application
    Filed: March 27, 2019
    Publication date: January 28, 2021
    Applicants: UACJ Corporation, DENSO CORPORATION
    Inventors: Yoshiyuki Oya, Tomohiro Shoji, Atsushi Fukumoto, Kouki Nishiyama, Toru Ikeda, Takahiro Shinoda
  • Patent number: 10857629
    Abstract: An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: December 8, 2020
    Assignee: UACJ Corporation
    Inventors: Atsushi Fukumoto, Yasunaga Itoh, Shoichi Sakoda, Tomoki Yamayoshi
  • Patent number: 10737357
    Abstract: A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [?m] is the thickness of the intermediate material, and tf [?m] is the thickness of the filler metal: tf?10.15×ln(M×ti)+3.7.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: August 11, 2020
    Assignee: UACJ CORPORATION
    Inventors: Yasunaga Itoh, Shoichi Sakoda, Atsushi Fukumoto