Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, obtained by brazing: a tube material comprising at least a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, 0.05 to 3.00% of Cu, and 0.40 to 2.00% of Mn, and a sacrificial anticorrosion material made of aluminum alloy comprising 2.00 to 6.00% of Zn, with a Si content of less than 0.10%, clad on the inner side surface of the core material; and a fin material comprising a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, and 0.40 to 2.00% of Mn, with a Zn content of less than 0.05%, and a brazing material clad on both surfaces of the core material, made of aluminum alloy comprising 3.00 to 13.00% of Si, with a Zn content of less than 0.05%.

Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, which is a heat exchanger installed in an exhaust gas recirculation system of an internal combustion engine to cool the exhaust gas comprises a tube provided with a sacrificial anticorrosion material on a side along which the exhaust gas passes, and a fin brazed to the surface side of the sacrificial anticorrosion material of the tube, the fin having a pitting potential higher than the pitting potential of the surface of the sacrificial anticorrosion material of the tube. According to the disclosure, an aluminum alloy heat exchanger for an exhaust gas recirculation system having a long service life with effective function of the sacrificial anticorrosion even under an acidic environment in which an oxide film is weakened as a whole and pitting corrosion is unlikely to occur can be provided.

Abstract: An aluminum alloy heat exchanger for an exhaust gas recirculation system, the heat exchanger obtained by brazing: a tube material comprising a core material comprising 0.05 mass % to 1.50 mass % of Si, 0.05 mass % to 3.00 mass % of Cu, and 0.40 mass % to 2.00 mass % of Mn, and a sacrificial anticorrosion material comprising 2.00 mass % to 6.00 mass % of Zn, clad on an inner side surface of the core material; and a fin material comprising a core material comprising 0.05 mass to 1.50 mass % of Si, and 0.40 mass % to 2.00 mass % of Mn, and a brazing material comprising 3.00 mass % to 13.00 mass % of Si, clad on both surfaces of the core material; the heat exchanger having a ratio of a surface area Sb (mm2) of the fin material to a surface area Sa (mm2) of the sacrificial anticorrosion material of less than 200%.

Abstract: An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.

Abstract: A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [?m] is the thickness of the intermediate material, and tf [?m] is the thickness of the filler metal: tf?10.15×ln(M×ti)+3.7.

Abstract: There are provided: an aluminum alloy fin material for a heat exchanger, the aluminum alloy fin material including an aluminum alloy including 0.70 to 1.50 mass % Si, 0.05 to 2.00 mass % Fe, 1.0 to 2.0 mass % Mn, 0.5 to 4.0 mass % Zn, with a balance consisting of Al and inevitable impurities, in which before brazing heating, the amount of solid solution Si is 0.60 mass % or less, and the amount of solid solution Mn is 0.60 mass % or less, and in which a recrystallization temperature in a temperature rise process during the brazing heating is 450° C. or less; a method of producing the aluminum alloy fin material; a heat exchanger using the aluminum alloy fin material; and a method of producing the heat exchanger.

Abstract: An aluminum alloy fin material for a heat exchanger is made of an aluminum alloy including 0.05 mass % to 0.5 mass % of Si, 0.05 mass % to 0.7 mass % of Fe, 10 mass % to 2.0 mass % of Mn, 0.5 mass % to 1.5 mass % of Cu, and 3.0 mass % to 7.0 mass % of Zn, with the balance being Al and unavoidable impurities. In an L-ST plane thereof, second-phase grains having an equivalent circle diameter equal to or more than 0.030 ?m and less than 0.50 ?m have a perimeter density of 0.30 ?m/?m2 or more, second-phase grains having an equivalent circle diameter equal to or more than 0.50 ?m have a perimeter density of 0.030 ?m/?m2 or more, and specific resistance thereof at 20° C. is 0.030 ??m or more.

Abstract: A method for producing an aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as “%” below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 ?m or more; and a ratio R1/R2 is 0.30 or less, wherein R1 (?m) is a grain size in a thickness direction and R2 (?m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.

Abstract: A semiconductor memory includes a substrate, a source line layer above the substrate in a memory region and a peripheral region of the substrate, a first insulating layer above the source line layer, a first conductive layer on the first insulating layer in the memory and peripheral regions, an alternating stack of a plurality of second insulating layers and a plurality of second conductive layers on the first conductive layer in the memory region, and a plurality of pillars extending through the alternating stack of the second insulating layers and the second conductive layers, the first conductive layer, and the first insulating layer in the memory region. A bottom end of each of the pillars is in the source line layer in a thickness direction. A carrier density of the source line layer is higher in the memory region than in the peripheral region.

Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Abstract: An aluminum alloy brazing sheet which is thin but has excellent weldability and post-brazing strength. An aluminum alloy brazing sheet having a core material comprising an aluminum alloy, an Al—Si based brazing filler metal clad on one surface of the core material and a sacrificial anode material clad on the other surface of the core material: wherein the core material comprises certain amounts of Si, Fe, Cu and Mn and certain amounts of one, two or more selected from Ti, Zr, Cr and V; the sacrificial anode material comprises certain amounts of Si, Fe, Mg and Zn; in a cross section parallel to the longitudinal direction and along the thickness direction, the interface between the core material and the sacrificial anode material includes 300 pieces/mm or less of an Al—Mg—Cu based intermetallic compound; and the core material and the sacrificial anode material have an unrecrystallized structure.

Abstract: A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [?m] is the thickness of the intermediate material, and tf [?m] is the thickness of the filler metal: tf?10.15×ln(M×ti)+3.7.

Abstract: An aluminum alloy brazing sheet is disclosed including a core material made of pure aluminum or aluminum alloy, one side or both sides of the core material, being clad with a brazing material, with an intermediate material interposed between the core material and the brazing material, the intermediate material including 0.4 to 6 mass % of Mg, further including at least one of Mn, Cr, and Zr, and the balance being Al and inevitable impurities, having the Mn content not more than 2.0 mass %, the Cr content not more than 0.3 mass %, and the Zr content not more than 0.3 mass %, with the total content of Mn, Cr, and Zr being at least 0.1 mass %, the brazing material including 4 to 13 mass % of Si, and the balance being Al and inevitable.

Abstract: Provided are: an aluminum alloy material for a heat exchanger, including an aluminum alloy including 0.02 to 0.40 mass % Si, 1.0 to 2.5 mass % Cu, 0.5 to 2.0 mass % Mn, and a balance of Al and inevitable impurities, in which the number density of an Al—Cu—Mn-based intermetallic compound having an equivalent circle diameter of 0.1 to 1.0 ?m is 1.0×106/mm2 or more; and a method for producing the aluminum alloy material.

Abstract: An aluminum alloy clad material includes: a core material; and a sacrificial anode material layer clad on one surface or both surfaces of the core material. Each of the core material and the sacrificial anode material layer has a predetermined composition. In the core material, the number density of an Al—Mn-based intermetallic compound having an equivalent circle diameter of 0.1 ?m or more is 1.0×105 particles/mm2 or more, and the number density of Al2Cu having an equivalent circle diameter of 0.1 ?m or more is 1.0×105 particles/mm2 or less. In the sacrificial anode material layer, the number density of a Mg—Si-based crystallized product having an equivalent circle diameter of 0.1 to 5.0 ?m is 100 to 150,000 particles/mm2, and the number density of a Mg—Si-based crystallized product having an equivalent circle diameter of more than 5.0 ?m and 10.0 ?m or less is 5 particles/mm2 or less.

Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Abstract: According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Abstract: An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; more than 1.0 mass % but not more than 2.0 mass % of Fe; 0.4 to 1.0 mass % of Mn; and 0.4 to 1.0 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 1×105 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB (N/mm2), a tensile strength after braze-heating, TSA (N/mm2), and a fin sheet thickness, t (?m), satisfy: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less; and a method of producing the same.

Abstract: An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; 0.1 to 1.0 mass % of Fe; 0.8 to 1.8 mass % of Mn; and 0.4 to 2.5 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 5×104 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB (N/mm2), a tensile strength after braze-heating, TSA (N/mm2), and a sheet thickness of the fin material, t (?m), satisfy a relationship: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less; and a method of producing the same.

Abstract: A brazing method of performing brazing on an aluminum alloy brazing sheet by increasing a temperature from 200° C. to a brazing temperature in an inert gas atmosphere with a dew point controlled to ?20° C. or lower, thereafter increasing the temperature in an inert gas atmosphere with a dew point controlled to ?40° C. or lower and an oxygen concentration controlled to 100 ppm or lower, and performing brazing heating in an inert gas atmosphere at a temperature of 580° C. to 615° C. without using flux. The aluminum alloy brazing sheet has a structure in which one or both of a core material and a brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr), and oxide particles including the X atoms and having a volume change ratio of 0.99 or lower are formed on a surface thereof.