Abstract: An aluminum alloy brazing sheet used for brazing in an inert gas atmosphere without using flux includes a core material of aluminum or aluminum alloy, and a brazing material of aluminum alloy including Si of 4.0 mass % to 13.0 mass % and cladding one side surface or both side surfaces of the core material. One or both of the core material and the brazing material includes any one or two or more types of X atoms (X is Mg, Li, Be, Ca, Ce, La, Y, and Zr). The aluminum alloy brazing sheet is a brazing sheet in which oxide particles including the X atoms and having a volume change ratio of 0.99 or lower with respect to an oxide film before brazing heating are formed on a surface thereof, by brazing heating.

Abstract: An aluminum alloy brazing sheet having high corrosion resistance is provided, which develops the sacrificial anticorrosion effect in both surfaces of the sheet, which has the brazing function in one of both the surfaces, and which prevents the occurrence of preferential corrosion. A channel forming component for a vehicular heat exchanger is also provided by utilizing the aluminum alloy brazing sheet. An aluminum alloy brazing sheet having high corrosion resistance includes an aluminum alloy core, a filler material clad on one surface of the core, and a sacrificial anode material clad on the other surface of the core, wherein the filler material, the sacrificial anode material, and the core have respective predetermined alloy compositions. A channel forming component for a vehicular heat exchanger is manufactured using the aluminum alloy brazing sheet having high corrosion resistance.

Abstract: [Problem to be Solved] To provide a fin material made of an aluminum alloy for heat exchangers with no fin buckling deformation and having excellent buckling resistance in a temperature range of 400° C. to 580° C. before a filler alloy melts at the time of brazing. [Solution] The fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 ?m is 3.0×106 particles/mm2 or more, and an amount of solid solution of Mn is 0.3 mass % or less.

Abstract: A fin material made of an aluminum alloy for heat exchangers contains 1.0 to 2.0 mass % of Mn, 0.7 to 1.4 mass % of Si, and 0.05 to 0.3 mass % of Fe, and one or more kinds of 0.05 to 0.3 mass % of Zr, 0.05 to 0.3 mass % of Cr, and 0.05 to 0.3 mass % of V, with the balance being Al and unavoidable impurities, in which a number density of intermetallic compounds having a circle-equivalent diameter of 0.025 to 0.4 ?m before braze-heating is 3.0×106 particles/mm2 or more, an amount of solid solution of Mn is 0.3 mass % or less and a respective amount of solid solution of Zr, Cr, and V is 0.1 mass % or less, and a recrystallization completion temperature during a temperature rise at the time of braze-heating is 450° C. or less.

Abstract: There is provided a laser scanning microscope apparatus including a first moving part equipped with an objective lens and configured to move the objective lens in a first direction, and a second moving part configured to be movable in a second direction orthogonal to the first moving part and equipped with the first moving part and a reflecting mirror that guides laser light radiated to an observation object and returning light of the observation object in a predetermined direction.

Abstract: According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.

Abstract: According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.

Abstract: According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.

Abstract: A heat exchanger aluminum alloy fin material, comprising Si 0.5 to 1.5 mass %; Fe 0.1 to 1.0 mass %; Mn 0.8 to 2.2 mass %; Zn 0.4 to 2.5 mass %; and further at least one selected from Cu, Ti, Zr, Cr, and V each in 0.02 to 0.3 mass %, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 5×104 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB, a tensile strength after braze-heating, TSA, and a sheet thickness of the fin material, t, satisfy: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less.

Abstract: An aluminum alloy material comprises: Si: less than 0.2 mass %, Fe: 0.1 to 0.3 mass %, Cu: 1.0 to 2.5 mass %, Mn: 1.0 to 1.6 mass %, and Mg: 0.1 to 1.0 mass %, the balance being Al and incidental impurities. A number density of Al?Mn compound having a circle equivalent diameter of not less than 0.1 ?m is not less than 1.0 x 105 mm?2, and a number density of Al2Cu having a circle equivalent diameter of not less than 0.1 ?m is not more than 1.0×105 mm?2.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a belt supporting module including a first portion that is provided around a first axis, a second portion that is provided around a second axis different from the first axis, a third portion connecting the first and second portions, and a fourth portion connecting the first and second portions and positioned below the third portion. The apparatus further includes a belt provided on the belt supporting module, and configured to rotate around the first axis in a first direction and rotate around the second axis in a second direction reverse to the first direction. The apparatus further includes a wafer supporting module provided on the belt and configured to support a wafer. The apparatus further includes raw material feeding heads provided above the belt and configured to feed a raw material of a film to be formed on the wafer.

Abstract: Provided is a laser scanning observation device including: a window unit provided in a partial area of a casing and configured to be in contact with or close to an observation target; an objective lens configured to collect laser light on the observation target through the window unit; an optical path changing element configured to change a direction of travel of the laser light guided within the casing toward the window unit; an astigmatism correction element provided in a front stage of the window unit and configured to correct astigmatism occurring upon the collection of the laser light on the observation target; and a rotation mechanism configured to allow at least the optical path changing element to rotate about a rotation axis perpendicular to a direction of incidence of the laser light on the window unit to scan the observation target with the laser light.

Abstract: A method of manufacturing an aluminum-alloy brazing sheet is provided. The aluminum-alloy brazing sheet includes an aluminum alloy core, a brazing filler metal of an Al—Si alloy, and a sacrificial anode. The method includes the steps of separately casting each of the respective aluminum alloys of the core, the brazing filler metal, and the sacrificial anode material, to form cast ingots of the respective aluminum alloys; separately hot rolling each of the respective ingots of the brazing filler metal and the sacrificial anode material to a predetermined thickness; combining the brazing filler metal onto one surface of the ingot of the core and the sacrificial anode material onto an opposite surface of the ingot of the core to obtain a combined material; cladding the combined material by hot rolling the combined material to obtain a clad sheet; cold-rolling the clad sheet; and annealing the clad sheet.

Abstract: An aluminum alloy brazing sheet which is thin but has excellent weldability and post-brazing strength. An aluminum alloy brazing sheet having a core material comprising an aluminum alloy, an Al—Si based brazing filler metal clad on one surface of the core material and a sacrificial anode material clad on the other surface of the core material: wherein the core material comprises certain amounts of Si, Fe, Cu and Mn and certain amounts of one, two or more selected from Ti, Zr, Cr and V; the sacrificial anode material comprises certain amounts of Si, Fe, Mg and Zn; in a cross section parallel to the longitudinal direction and along the thickness direction, the interface between the core material and the sacrificial anode material includes 300 pieces/mm or less of an Al—Mg—Cu based intermetallic compound; and the core material and the sacrificial anode material have an unrecrystallized structure.

Abstract: An aluminum alloy clad material having a core material and a sacrificial anode material clad on at least one surface of the core material, wherein the core material comprises an aluminum alloy comprising 0.050 to 1.5 mass % (referred to as “%” below) Si, 0.050 to 2.0% Fe and 0.50 to 2.00% Mn; the sacrificial anode material includes an aluminum alloy containing 0.50 to 8.00% Zn, 0.05 to 1.50% Si and 0.050 to 2.00% Fe; the grain size of the sacrificial anode material is 60 ?m or more; and a ratio R1/R2 is 0.30 or less, wherein R1 (?m) is a grain size in a thickness direction and R2 (?m) is a grain size in a rolling direction in a cross section of the core material along the rolling direction; a production method thereof; and a heat exchanger using the clad.

Abstract: An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; 0.1 to 1.0 mass % of Fe; 0.8 to 1.8 mass % of Mn; and 0.4 to 2.5 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 5×104 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB (N/mm2), a tensile strength after braze-heating, TSA (N/mm2), and a sheet thickness of the fin material, t (?m), satisfy a relationship: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less; and a method of producing the same.

Abstract: An aluminum alloy fin material for heat exchangers, containing 0.5 to 1.5 mass % of Si; more than 1.0 mass % but not more than 2.0 mass % of Fe; 0.4 to 1.0 mass % of Mn; and 0.4 to 1.0 mass % of Zn, with the balance being Al and unavoidable impurities, wherein a metallographic microstructure before braze-heating is such that a density of second phase particles having a circle-equivalent diameter of less than 0.1 ?m is less than 1×107 particles/mm2, and that a density of second phase particles having a circle-equivalent diameter of 0.1 ?m or more is 1×105 particles/mm2 or more, wherein a tensile strength before braze-heating, TSB (N/mm2), a tensile strength after braze-heating, TSA (N/mm2), and a fin sheet thickness, t (?m), satisfy: 0.4?(TSB?TSA)/t?2.1, and wherein the sheet thickness is 150 ?m or less; and a method of producing the same.

Abstract: According to one embodiment, a semiconductor memory device includes: a substrate; a stacked body including a plurality of electrode layers and a plurality of insulating layers, both of them being alternately stacked on the substrate; a cap film provided in contact with the electrode layer within a hole formed to penetrate the stacked body; an insulating film provided on a side wall of the cap film and including a charge accumulation film; and a channel body provided on a side wall of the insulating film. The cap film includes a protrusion portion protruding toward the insulating film. In the cap film, a film thickness of a portion where the protrusion portion is provided in a direction in which the protrusion portion protrudes is larger than a film thickness of the other portions where the protrusion portion is not provided.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.