Abstract: In a coil component, a shield layer is provided after the unevenness of the surface of an element body is smoothened by the surface being covered with an insulating layer. A Cu layer of the shield layer is provided on a smooth surface, and thus a thickness variation can be suppressed and the Cu layer can be formed with a substantially uniform thickness. In the coil component, a point where the shield layer is thin or a point lacking the shield layer is unlikely to be generated and a functional degradation of the shield layer is effectively suppressed.

Abstract: A film capacitor that includes a dielectric resin film containing a cured product of a first organic material and a second organic material; and a metal layer on at least one surface of the dielectric resin film. The first organic material contains an organic polymer having a hydroxy group and a benzene ring in a repeating unit; the second organic material contains 4,4?-diphenylmethane diisocyanate, a modified product of 4,4?-diphenylmethane diisocyanate, or a mixture thereof; and 400 ppm to 700 ppm of chlorine ions and 300 ppm to 500 ppm of phosphorus ions are present inside the dielectric resin film.

Abstract: There is provided a substrate support supporting a substrate comprising a base, a first ceramic layer on the base, and a second ceramic layer above the first ceramic layer. The first ceramic layer has a first base portion made of a first ceramic, and a plurality of heater electrodes included in the first base portion and for adjusting a temperature of the substrate. The second ceramic layer has a second base portion made of a second ceramic different from the first ceramic, and a chucking electrode included in the second base portion and for holding the substrate.

Abstract: An electrostatic chuck for electrostatically attracting a substrate includes: a chuck body formed of first ceramic particles and having a substrate-facing surface facing the substrate attracted to the electrostatic chuck; and a plurality of convex portions formed on the substrate-facing surface of the chuck body, wherein each of the plurality of convex portions excluding at least a tip-side layer is formed of second ceramic particles having a major axis diameter of 20 ?m or more and 2,000 ?m or less and has a porosity of 0.1% or more and 1.0% or less.

Abstract: A film capacitor that includes a dielectric resin film containing a cured product of a first organic material and a second organic material; and a metal layer on at least one surface of the dielectric resin film. The first organic material contains an organic polymer having a hydroxy group and a benzene ring in a repeating unit; the second organic material contains 4,4?-diphenylmethane diisocyanate, a modified product of 4,4?-diphenylmethane diisocyanate, or a mixture thereof; and 400 ppm to 700 ppm of chlorine ions and 300 ppm to 500 ppm of phosphorus ions are present inside the dielectric resin film.

Abstract: A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.

Abstract: A substrate support for use in a reaction chamber includes a base, and an in-situ electrostatic chuck. The chuck includes a first electrode in an upper portion of the chuck that is configured to hold a wafer to an upper surface of the upper portion by a first electrostatic attractive force under a condition of a first voltage is applied to the first electrode, and a second electrode that opposes an upper surface of the base and is configured to hold the chuck to the base by a second electrostatic attractive force under a condition that a second voltage is applied to the second electrode. Under a condition that the second voltage is not supplied to the second electrode, the second electrostatic attractive force is not present and the chuck is freed to be replaced in-situ without also removing the base and without exposing the reaction chamber to external atmosphere.

Abstract: Provided are an electric cable connecting terminal reducing unwanted overflow of solder out of an electric cable connecting portion to a connector portion during soldering, and a method for joining an electric cable connecting terminal and an electric cable. An electric cable connecting terminal for electrically connecting an electric cable to an external conductor includes a connector portion to be attached to the conductor, and an electric cable connecting portion having a connecting surface to which the electric cable, which is a bundle of core wires, is connected by soldering. The electric cable connecting portion includes a crimp portion to be swaged to hold the electric cable, and a step portion protruding from the connecting surface between the connector portion and the crimp portion.

Abstract: Provided are an electric cable connecting terminal reducing unwanted overflow of solder out of an electric cable connecting portion to a connector portion during soldering, and a method for joining an electric cable connecting terminal and an electric cable. An electric cable connecting terminal for electrically connecting an electric cable to an external conductor includes a connector portion to be attached to the conductor, and an electric cable connecting portion having a connecting surface to which the electric cable, which is a bundle of core wires, is connected by soldering. The electric cable connecting portion includes a crimp portion to be swaged to hold the electric cable, and a step portion protruding from the connecting surface between the connector portion and the crimp portion.

Abstract: A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.

Abstract: A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.

Abstract: A network environment capable of performing a smooth and comfortable TCP session operation is provided to a user. The session relay equipment includes a bridge portion which relays a session by which a sequence of packets are transmitted and received between terminals connected with each other via a network; a socket information table which has socket information containing (1) address information of the terminal and (2) protocol information used in the session, the socket information being associated with information on whether or not the session is to be terminated; and a service information table which has information on a communication service to be provided for each service provision unit, the communication service being identified based on predetermined information within a header of the packet. The bridge portion terminates the session and executes a communication service based on the information contained in the header of the packet and the socket information.

Abstract: The present invention provides an electric circuit device in which it is possible to achieve simultaneously the improvement of cooling performance and reduction in operating loss due to line inductance. The above object can be attained by constructing multiple plate-like conductors so that each of these conductors electrically connected to multiple semiconductor chips is also thermally connected to both chip surfaces of each such semiconductor chip to release heat from the chip surfaces of each semiconductor chip, and so that among the above conductors, a DC positive-polarity plate-like conductor and a DC negative-polarity plate-like conductor are opposed to each other at the respective conductor surfaces.

Abstract: In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

Abstract: An etching method, for etching a silicon nitride film on an underlying silicon oxide film by using a hard mask whose principal component is a silicon oxide, includes a step of etching the hard mask by using the resist film as a mask to form a mask pattern therein; a step of ashing the resist film; a step of oxidizing the hard mask; a main etching step of etching the silicon nitride film by using the patterned hard mask as a mask; and a step of overetching the silicon nitride film at a high selectivity of the silicon nitride film to the silicon oxide film. The main etching step is performed after the step of forming the mask pattern in the hard mask and before the overetching step at a selectivity of the silicon nitride film to the silicon oxide film smaller than that in the overetching step.

Abstract: A train detection system includes transmitters receivers connected to a track circuit for transmitting and receiving a train detecting signal to and from the track circuit, and a control device on the ground, which transmits the train detecting signal to the transmitter and receives the train detection signal from the receiver. The transmitter adds a first unique code data to the train detecting signal received from the control device and transmits the same to the track circuit, and the receiver adds a second unique code data to the train detecting signal being added of the first unique code data received from the track circuit and transmits the same to the control device. The control device on the ground includes a storage portion and a collating portion which collates whether the first and second unique code data received from the receiver coincide with data stored in advance in the storage portion.

Abstract: An elevator system in which a car travels upward and downward among a plurality of floors. The elevator system includes a first terminal having a wireless transmitting/receiving unit provided for at least one of the plurality of floors and a second terminal having a wireless transmitting/receiving unit associated with the car. A mobile terminal is provided which enables wireless transmitting/receiving of signals between at least the first and second terminals.

Abstract: An etching method, for etching a silicon nitride film on an underlying silicon oxide film by using a hard mask whose principal component is a silicon oxide, includes a step of etching the hard mask by using the resist film as a mask to form a mask pattern therein; a step of ashing the resist film; a step of oxidizing the hard mask; a main etching step of etching the silicon nitride film by using the patterned hard mask as a mask; and a step of overetching the silicon nitride film at a high selectivity of the silicon nitride film to the silicon oxide film. The main etching step is performed after the step of forming the mask pattern in the hard mask and before the overetching step at a selectivity of the silicon nitride film to the silicon oxide film smaller than that in the overetching step.

Abstract: A train detection system includes transmitters receivers connected to a track circuit for transmitting and receiving a train detecting signal to and from the track circuit, and a control device on the ground, which transmits the train detecting signal to the transmitter and receives the train detection signal from the receiver. The transmitter adds a first unique code data to the train detecting signal received from the control device and transmits the same to the track circuit, and the receiver adds a second unique code data to the train detecting signal being added of the first unique code data received from the track circuit and transmits the same to the control device. The control device on the ground includes a storage portion and a collating portion which collates whether the first and second unique code data received from the receiver coincide with data stored in advance in the storage portion.

Abstract: In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.