Patents by Inventor Atsushi Okamoto

Atsushi Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12046598
    Abstract: A semiconductor device includes a first power supply line, a second power supply line, a first ground line, a switch circuit connected to the first and the second power supply line, and a switch control circuit connected to the first ground line and the first power supply line. The switch circuit includes a first and a second transistor of a first conductive type. A first gate electrode of the first transistor is connected to a second gate electrode of the second transistor. The switch control circuit includes a third transistor of a second conductive type, and a fourth transistor of a third conductive type. A third gate electrode of the third transistor is connected to a fourth gate electrode of the fourth transistor. A semiconductor device includes a signal line that electrically connects a connection point between the third and fourth transistor to the first and second gate electrode.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: July 23, 2024
    Assignee: SOCIONEXT INC.
    Inventors: Wenzhen Wang, Hirotaka Takeno, Atsushi Okamoto
  • Publication number: 20240224491
    Abstract: A semiconductor device includes a peripheral circuit area, a bit cell area, and a separating area positioned between the peripheral circuit area and the bit cell. A first power switch circuit for the peripheral circuit area is connected to a first power supply line, and a second power supply line and a first ground line provided on the substrate; and connects the first power supply line and the second power supply line. The second power switch circuit for the bit cell area is connected to a third power supply line, a fourth power supply line, and a second ground line provided on the substrate; and connects the third power supply line and the fourth power supply line.
    Type: Application
    Filed: March 12, 2024
    Publication date: July 4, 2024
    Inventors: Wenzhen WANG, Atsushi OKAMOTO, Hirotaka TAKENO
  • Publication number: 20240224492
    Abstract: A semiconductor device includes first and second power supply lines and first and second ground lines provided on a first surface of a substrate, and third and fourth power supply lines provided on a second surface of the substrate. The second power supply line and the third power supply line are connected through vias provided in the substrate. The semiconductor device includes first and second areas arranged to have a third area sandwiched in-between, and a power switch circuit including switch transistors connected between the third and fourth power supply lines.
    Type: Application
    Filed: March 15, 2024
    Publication date: July 4, 2024
    Inventors: Atsushi OKAMOTO, Wenzhen WANG, Hirotaka TAKENO
  • Publication number: 20240209819
    Abstract: In a support structure for a fuel injection valve (I), a snap protrusion (21) snap-engaged with an outer peripheral surface of a fuel introduction cylinder part (4) accepted in a notch (19) is formed on an inner side surface of the notch (19) of the base plate (15). A snap engagement force of the snap protrusion (21) with respect to the fuel introduction cylinder part (4) automatically increases because of an increase in a contact frictional force of the elastic piece (16) against the base plate (15) caused by an increase in a flexural repulsive force of the elastic piece (16), in a mounted state of the fuel injection valve (I) on the engine (E).
    Type: Application
    Filed: October 17, 2022
    Publication date: June 27, 2024
    Inventors: Atsushi OKAMOTO, Takaya FUKUNAGA, Kazuki NODA, Takumi SUZUKI
  • Publication number: 20240199528
    Abstract: A fragrance composition contains a compound represented by Formula (1) below as an active ingredient: where, in Formula (1), R1 is a linear or branched olefinically unsaturated hydrocarbon group having from 2 to 4 carbons, and R2 is a linear, branched, or cyclic alkyl group having from 1 to 6 carbons.
    Type: Application
    Filed: May 27, 2022
    Publication date: June 20, 2024
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Umi YOKOBORI, Wataru HAMAJIMA, Atsushi OKAMOTO
  • Patent number: 11852379
    Abstract: A water heating system includes: a refrigerant circuit that includes a compressor and in which a refrigerant flows; and a water circuit in which water flows. The refrigerant circuit shares with the water circuit a water heat exchanger that heats the water using the refrigerant discharged from the compressor. The water heat exchanger includes a first heat-exchanging unit in which the refrigerant exchanges heat with the water at a water outlet portion. The refrigerant circuit further includes a heat radiator that is disposed between the compressor and the first heat-exchanging unit and that radiates heat of the refrigerant discharged from the compressor. The heat radiator is configured to radiate heat of the refrigerant to water that flows on an upstream side of the water outlet portion.
    Type: Grant
    Filed: September 30, 2022
    Date of Patent: December 26, 2023
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Hideho Sakaguchi, Masanori Ukibune, Atsushi Okamoto, Yasuhiro Kouno
  • Patent number: 11799471
    Abstract: A semiconductor device includes a first area including a logic circuit, a second area including a functional circuit, a first power line, a second power line that supplies a power to the logic circuit and the functional circuit, and a first power switch circuit connected to the first power line and the second power line, wherein the first power switch circuit includes a first transistor larger than a transistor provided in the logic circuit and being connected to the first power line and the second power line, an end cap provided in an area next to the functional circuit, and a second transistor provided between the end cap and an area including the first transistor, the second transistor being of a same size as the transistor provided in the logic circuit and being connected to the first power line and the second power line.
    Type: Grant
    Filed: December 20, 2022
    Date of Patent: October 24, 2023
    Assignee: SOCIONEXT INC.
    Inventors: Atsushi Okamoto, Hirotaka Takeno, Junji Iwahori
  • Publication number: 20230302562
    Abstract: A copper-ceramic joint body having high joint strength is provided. The copper-ceramic joint body includes: a copper member made of Cu or Cu alloy; a ceramic member joined to the copper member and made of nitride of Si or Al; and a joint layer formed on joint surfaces of the copper member and the ceramic member, and containing Cu and Mg and further containing at least one type of active metal elements selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ca, Y, Ce, La, Sm, Yb, Nd, Gd and Er, and shear strength of the joint layer is equal to or higher than 10 MPa.
    Type: Application
    Filed: March 23, 2023
    Publication date: September 28, 2023
    Inventors: Takashi NOGAWA, Shun TAKANO, Kenji OKISHIRO, Atsushi OKAMOTO
  • Publication number: 20230223381
    Abstract: A semiconductor integrated circuit device includes first and second semiconductor chips stacked one on top of the other. First power supply lines in the first semiconductor chip are connected with second power supply lines in the second semiconductor chip through a plurality of first vias. The directions in which the first power supply lines and the second power supply lines extend are orthogonal to each other.
    Type: Application
    Filed: March 6, 2023
    Publication date: July 13, 2023
    Inventors: Atsushi OKAMOTO, Hirotaka TAKENO, Wenzhen WANG
  • Patent number: 11674695
    Abstract: A controller performs a first operation in which a heat source device directly or indirectly heats water in a first channel of a heat exchanger and a second operation in which the heat source device directly or indirectly cools the water in the first channel of the heat exchanger after the first operation ends.
    Type: Grant
    Filed: April 12, 2022
    Date of Patent: June 13, 2023
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Hideho Sakaguchi, Atsushi Okamoto, Masanori Ukibune, Yasuhiro Kouno, Yurika Gotou, Qi Fang, Tim Coessens
  • Patent number: 11645003
    Abstract: According to one embodiment, a memory system includes a non-volatile memory, and a controller configured to control the non-volatile memory. The controller is configured to write data to the non-volatile memory, read the written data from the non-volatile memory after writing of the data is completed, generate parity data corresponding to the read data, and write the generated parity data to a memory for parity storage.
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: May 9, 2023
    Assignee: Kioxia Corporation
    Inventors: Atsushi Okamoto, Tetsuya Yasuda, Akinori Nagaoka
  • Publication number: 20230120959
    Abstract: A semiconductor device includes a first area including a logic circuit, a second area including a functional circuit, a first power line, a second power line that supplies a power to the logic circuit and the functional circuit, and a first power switch circuit connected to the first power line and the second power line, wherein the first power switch circuit includes a first transistor larger than a transistor provided in the logic circuit and being connected to the first power line and the second power line, an end cap provided in an area next to the functional circuit, and a second transistor provided between the end cap and an area including the first transistor, the second transistor being of a same size as the transistor provided in the logic circuit and being connected to the first power line and the second power line.
    Type: Application
    Filed: December 20, 2022
    Publication date: April 20, 2023
    Inventors: Atsushi OKAMOTO, Hirotaka TAKENO, Junji IWAHORI
  • Patent number: 11626386
    Abstract: A semiconductor integrated circuit device includes first and second semiconductor chips stacked one on top of the other. First power supply lines in the first semiconductor chip are connected with second power supply lines in the second semiconductor chip through a plurality of first vias. The directions in which the first power supply lines and the second power supply lines extend are orthogonal to each other.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: April 11, 2023
    Assignee: SOCIONEXT INC.
    Inventors: Atsushi Okamoto, Hirotaka Takeno, Wenzhen Wang
  • Publication number: 20230028896
    Abstract: A water heating system includes: a refrigerant circuit that includes a compressor and in which a refrigerant flows; and a water circuit in which water flows. The refrigerant circuit shares with the water circuit a water heat exchanger that heats the water using the refrigerant discharged from the compressor. The water heat exchanger includes a first heat-exchanging unit in which the refrigerant exchanges heat with the water at a water outlet portion. The refrigerant circuit further includes a heat radiator that is disposed between the compressor and the first heat-exchanging unit and that radiates heat of the refrigerant discharged from the compressor. The heat radiator is configured to radiate heat of the refrigerant to water that flows on an upstream side of the water outlet portion.
    Type: Application
    Filed: September 30, 2022
    Publication date: January 26, 2023
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Hideho Sakaguchi, Masanori Ukibune, Atsushi Okamoto, Yasuhiro Kouno
  • Patent number: 11563432
    Abstract: A semiconductor device includes a first area including a logic circuit, a second area including a functional circuit, a first power line, a second power line that supplies a power to the logic circuit and the functional circuit, and a first power switch circuit connected to the first power line and the second power line, wherein the first power switch circuit includes a first transistor larger than a transistor provided in the logic circuit and being connected to the first power line and the second power line, an end cap provided in an area next to the functional circuit, and a second transistor provided between the end cap and an area including the first transistor, the second transistor being of a same size as the transistor provided in the logic circuit and being connected to the first power line and the second power line.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: January 24, 2023
    Assignee: SOCIONEXT INC.
    Inventors: Atsushi Okamoto, Hirotaka Takeno, Junji Iwahori
  • Publication number: 20220403289
    Abstract: A fragrance composition containing a compound represented by Formula (1) as an active ingredient: where in Formula (1), R1 represents a chain hydrocarbon group having from 7 to 20 carbons, and may be linear or branched, and a saturated group or an unsaturated group, and when R1 is an unsaturated group, R1 may have one or more carbon-carbon double bond(s) or carbon-carbon triple bond(s).
    Type: Application
    Filed: December 22, 2020
    Publication date: December 22, 2022
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Atsushi OKAMOTO, Kyoko HIRAOKA, Umi YOKOBORI
  • Publication number: 20220402857
    Abstract: A fragrance composition containing a compound represented by Formula (1) as an active ingredient: where in Formula (1), R1 represents a linear, branched, or cyclic alkyl group having from 1 to 4 carbon(s); and R2 represents a linear, branched, or cyclic alkyl group having from 1 to 6 carbon(s).
    Type: Application
    Filed: December 22, 2020
    Publication date: December 22, 2022
    Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Atsushi OKAMOTO, Kyoko HIRAOKA, Wataru HAMAJIMA, Umi YOKOBORI
  • Patent number: 11485931
    Abstract: A fragrance composition comprising a compound represented by Formula (1) as an active ingredient: wherein, in Formula (1), R1 represents a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: November 1, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Atsushi Okamoto, Eriko Kushida, Umi Yokobori
  • Patent number: 11485932
    Abstract: A fragrance composition comprising a compound represented by Formula (1) as an active ingredient: wherein, in Formula (1), R1 represents a linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: November 1, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Atsushi Okamoto, Eriko Kushida, Umi Yokobori, Kyoko Kimura
  • Patent number: 11479738
    Abstract: A fragrance composition comprising a compound represented by Formula (1): wherein, in Formula (1), R represents a linear or branched alkyl group having from 2 to 3 carbon atoms or a cyclic alkyl group having from 3 to 6 carbon atoms.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: October 25, 2022
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Atsushi Okamoto, Umi Yokobori, Eriko Kushida, Masaki Takemoto