Abstract: Provided are a novel electrode device capable of simultaneously solving a problem of sludge coat covering an anode surface, and a problem of increase in the inter-electrode distance between the anode and cathode, and a method for manufacturing a metal foil using the same. Disclosed is an electrode device, used while being immersed in an electroconductive liquid, the electrode device comprising: a barrel which has an outer wall having plural through holes and can store a metal soluble in the liquid during current application; a shaft passing through the inside of the barrel and having a peripheral surface to which current can be applied; and a metal introducing portion for introducing the metal into the barrel, wherein the barrel rotates on its axis.

Abstract: An object of the present invention is to bring out potential capabilities of mode-division multiplexing (MDM). An optical communication system includes a hologram medium (1) in which holograms are multiplex-recorded so as to correspond to respective spatial modes of signal light transmitted by a multi-mode fiber (MMF) (2). A phase plate (4) which modulates phases of the respective spatial modes so as to reduce a spatial overlap between the spatial modes is provided on a side of the hologram medium (1) on which side the signal light enters the hologram medium (1).

Abstract: A semiconductor device includes a semiconductor substrate, a first standard cell including a first active region and a second active region, and a power switching circuit including a first switching transistor electrically connected between a first interconnect and a second interconnect over the semiconductor substrate, and including a first buffer connected to a gate of the first switching transistor, the first buffer including a third active region and a fourth active region, and wherein the first buffer adjoins, in a plan view, the first standard cell in a first direction, wherein an arrangement of the first active region matches an arrangement of the third active region in a second direction different from the first direction, and wherein an arrangement of the second active region matches an arrangement of the fourth active region in the second direction.

Abstract: A semiconductor device includes a first circuit, a second circuit, a first power supply line, a second power supply line coupled to the first circuit, a third power supply line, a fourth power supply line coupled to the second circuit, a first switch circuit including a first switch transistor and a well tap, the first switch transistor including one source or drain end coupled to the first power supply line and another source or drain end coupled to the second power supply line, the well tap being electrically coupled to the second power supply line, and a second switch circuit including a second switch transistor including one source or drain end coupled to the third power supply line and another source or drain end coupled to the fourth power supply line, the second switch circuit including no well tap electrically coupled to the fourth power supply line.

Abstract: A semiconductor device includes a first circuit, a second circuit, a first power supply line, a second power supply line coupled to the first circuit, a third power supply line, a fourth power supply line coupled to the second circuit, a first switch circuit including a first switch transistor and a well tap, the first switch transistor including one source or drain end coupled to the first power supply line and another source or drain end coupled to the second power supply line, the well tap being electrically coupled to the second power supply line, and a second switch circuit including a second switch transistor including one source or drain end coupled to the third power supply line and another source or drain end coupled to the fourth power supply line, the second switch circuit including no well tap electrically coupled to the fourth power supply line.

Abstract: Provided is a diol that excels in thermal stability; and, a method for manufacturing a diol, a di(meth)acrylate, and a method for manufacturing a di(meth)acrylate. The diol represented by the formula (1) below; wherein each of R1 and R2 independently represents a hydrocarbon group; and each R3 independently represents a hydrogen atom, hetero atom-containing group, halogen atom, straight chain alkyl group having 1 to 6 carbon atoms, branched alkyl group having 3 to 6 carbon atoms or, aryl group-containing group having 6 to 12 carbon atoms.

Abstract: A semiconductor device includes a first circuit, a second circuit, a first power supply line, a second power supply line coupled to the first circuit, a third power supply line, a fourth power supply line coupled to the second circuit, a first switch circuit including a first switch transistor and a well tap, the first switch transistor including one source or drain end coupled to the first power supply line and another source or drain end coupled to the second power supply line, the well tap being electrically coupled to the second power supply line, and a second switch circuit including a second switch transistor including one source or drain end coupled to the third power supply line and another source or drain end coupled to the fourth power supply line, the second switch circuit including no well tap electrically coupled to the fourth power supply line.

Abstract: Power switch cells (20) respectively includes power switches (21), each of which is capable of performing switching between electrical connection and disconnection between a global power supply line (11) and a local power supply line (8) in accordance with a control signal (CTR). The power switches (21) are connected in a chain state to constitute a chain connection through which the control signal (CTR) is sequentially transmitted. A starting point switch (21a) in the chain connection has a greater distance to an edge (BE) of a region occupied by a power domain than an ending point switch (21b).

Abstract: A circuit block including standard cells (1) arranged therein is provided with switch cells (20) capable of switching between electrical connection and disconnection between power supply lines (3) extending in an X-direction and power supply straps (11) extending in a Y-direction. Each of the power supply straps (11) is provided with a single switch cell (20) arranged every M sets of power supply lines (3) (M is an integer of 3 or more). In the Y-direction, the switch cells (20) are arranged at different positions in the power supply straps (11) adjacent to each other, and are arranged at the same position every M power supply straps (11) in the X-direction.

Abstract: Provided are a novel electrode device capable of simultaneously solving a problem of sludge coat covering an anode surface, and a problem of increase in the inter-electrode distance between the anode and cathode, and a method for manufacturing a metal foil using the same. Disclosed is an electrode device, used while being immersed in an electroconductive liquid, the electrode device comprising: a barrel which has an outer wall having plural through holes and can store a metal soluble in the liquid during current application; a shaft passing through the inside of the barrel and having a peripheral surface to which current can be applied; and a metal introducing portion for introducing the metal into the barrel, wherein the barrel rotates on its axis.

Abstract: A semiconductor device includes a first circuit, a second circuit, a first power supply line, a second power supply line coupled to the first circuit, a third power supply line, a fourth power supply line coupled to the second circuit, a first switch circuit including a first switch transistor and a well tap, the first switch transistor including one source or drain end coupled to the first power supply line and another source or drain end coupled to the second power supply line, the well tap being electrically coupled to the second power supply line, and a second switch circuit including a second switch transistor including one source or drain end coupled to the third power supply line and another source or drain end coupled to the fourth power supply line, the second switch circuit including no well tap electrically coupled to the fourth power supply line.

Abstract: An object of the present invention is to provide an electrolytic aluminum foil having no significant difference in properties between one surface and the other surface thereof, and also a method for producing the same. Another object is to provide a current collector for an electrical storage device using the electrolytic aluminum foil, an electrode for an electrical storage device, and an electrical storage device. An electrolytic aluminum foil of the present invention as a means for achieving the object is characterized in that both surfaces of the foil have L* values of 86.00 or more in the L*a*b* color space (SCI method).

Abstract: A current collector for a lithium ion secondary battery, on which an electrode mixture layer is formed, satisfies A?0.10 ?m and 6?(B/A)?15 when assuming that a three-dimensional center plane average roughness SRa of a surface of at least one side of the current collector on which the electrode mixture layer is formed is A and a ratio of an actual surface area of the surface of at least one side of the current collector to a geometric area of the surface of at least one side of the current collector, which is (actual surface area)/(geometric area), is B.

Abstract: A polyether diol compound represented by the following formula (3): where R5, R6, R7 and R8, which may be the same as or different from each other, each represent a linear or branched alkyl group having 1 to 6 carbon atoms.

Abstract: A method for producing a porous aluminum foil of the present invention is characterized in that a porous aluminum film is formed on a surface of a substrate by electrolysis using a plating solution containing at least (1) a dialkyl sulfone, (2) an aluminum halide, and (3) a nitrogen-containing compound, and having a water content of 100 to 2000 ppm, and then the film is separated from the substrate. The nitrogen-containing compound is preferably at least one selected from the group consisting of an ammonium halide, a hydrogen halide salt of a primary amine, a hydrogen halide salt of a secondary amine, a hydrogen halide salt of a tertiary amine, and a quaternary ammonium salt represented by the general formula: R1R2R3R4N.X (R1 to R4 independently represent an alkyl group and are the same as or different from one another, and X represents a counteranion for the quaternary ammonium cation).

Abstract: A method for producing a polyether diol includes the step of subjecting a compound represented by the following general formula (1) to hydrogenation reduction in the presence of a hydrogenation catalyst to provide a specific polyether diol.

Abstract: A polyether diol compound represented by the following formula (3): where R5, R6, R7 and R8, which may be the same as or different from each other, each represent a linear or branched alkyl group having 1 to 6 carbon atoms.

Abstract: A circuit for controlling power supply includes a first switch situated between a first power supply and a first node coupled to a circuit block, a second switch situated between a second power supply having a voltage value different than the first power supply and a second node coupled to a back gate of a transistor of the circuit block, a third switch situated between the first node and the second node, and a control unit configured to place the second switch in an “on” state and the third switch in an “off” state during an “on” state of the first switch, and to place the second switch in an “off” state and the third switch in an “on” state during an “off” state of the first switch.

Abstract: A container refrigeration device includes: a fan controller which reduces a rotation speed of an inside fan when a temperature inside a container is stabilized; and a rotation speed controller which reduces an operational rotation speed N of a compressor such that the temperature inside the container becomes equal to a target temperature as the fan controller reduces the rotation speed of the inside fan.

Abstract: A semiconductor device includes a first power supply node and a second power supply node having a voltage value higher than the first power supply node. A first switch interrupts a power supplied from the first power supply node to a first circuit node. A second switch interrupts a power supplied from the second power supply node to a second circuit node. A driver drives the second switch by a third switch being driven. The third switch is connected between the second power supply node and the first circuit node. A controller outputs a control signal to drive the first and third switches.