Abstract: An imaging device having a superior light-shielding property for a charge-holding section is provided. The imaging device includes: an Si {111} substrate extending along a horizontal plane; a photoelectric conversion section provided in the Si {111} substrate and generating charges corresponding to a light reception amount by photoelectric conversion; a charge-holding section provided in the Si {111} substrate and holding charges transferred from the photoelectric conversion section; and a light-shielding section including a horizontal light-shielding part positioned between the photoelectric conversion section and the charge-holding section in a thickness direction and extending along the horizontal plane and a vertical light-shielding part orthogonal thereto.

Abstract: Provided are: a modified sulfide solid electrode containing a sulfide solid electrolyte having a BET specific surface area of 10 m2/g or more and containing a lithium atom, a sulfur atom, a phosphorus atom, and a halogen atom, and an epoxy compound, in which the modified sulfide solid electrolyte has a peak at 2800 to 3000 cm?1 in an infrared absorption spectrum obtained by FT-IR spectroscopy (ATR method); and a method for producing the modified sulfide solid electrolyte, which has excellent coating suitability when applied as a paste and is capable of efficiently exhibiting excellent battery performance even when a sulfide solid electrolyte having a large specific surface area is used.

Abstract: Provided are a method of manufacturing a modified sulfide solid electrolyte, which is excellent in coating suitability when applied as a paste even if a sulfide solid electrolyte has a large specific surface area, and can efficiently exhibit an excellent battery performance, the modified sulfide solid electrolyte obtained by the manufacturing method, and an electrode combined material and a lithium ion battery which exhibit an excellent battery performance. The method includes: mixing an organic halide and an organic solvent with a sulfide solid electrolyte having a BET specific surface area of 10 m2/g or more and containing a lithium atom, a sulfur atom, a phosphorus atom, and a halogen atom; and removing the organic solvent.

Abstract: An imaging device having a superior light-shielding property for a charge-holding section is provided. The imaging device includes: an Si {111} substrate extending along a horizontal plane; a photoelectric conversion section provided in the Si {111} substrate and generating charges corresponding to a light reception amount by photoelectric conversion; a charge-holding section provided in the Si {111} substrate and holding charges transferred from the photoelectric conversion section; and a light-shielding section including a horizontal light-shielding part positioned between the photoelectric conversion section and the charge-holding section in a thickness direction and extending along the horizontal plane and a vertical light-shielding part orthogonal thereto.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: The present disclosure relates to an image capturing element, a manufacturing method, and an electronic device that make it possible to improve effects of reducing crosstalk. A trench part provided from a light-receiving surface side of a semiconductor substrate in which photoelectric conversion parts that photoelectrically convert emitted light are formed and between the plurality of photoelectric conversion parts; and a protrusion part provided with at least an inclined surface that is inclined with respect to a side surface of the trench part to widen a space of the trench part in one part of the trench part are provided. The present technology can be applied, for example, to backlit solid-state image capturing elements.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

Abstract: A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.

Abstract: According to one embodiment, a semiconductor memory device includes a bit line electrically connected to a memory cell, a first node electrically connected to the bit line, a first driver configured to increase a voltage of the first node to a first voltage, a first buffer circuit configured to store data based on the voltage of the first node, a bus electrically connected to the first buffer circuit, a first transistor electrically connected between the first node and the bus, and a second buffer circuit electrically connected to the bus. The first buffer circuit is electrically connected to an input terminal of the first driver. The first driver changes a voltage of the bus based on the data stored in the first buffer circuit.

Abstract: An imaging device having a superior light-shielding property for a charge-holding section is provided. The imaging device includes: an Si {111} substrate extending along a horizontal plane; a photoelectric conversion section provided in the Si {111} substrate and generating charges corresponding to a light reception amount by photoelectric conversion; a charge-holding section provided in the Si {111} substrate and holding charges transferred from the photoelectric conversion section; and a light-shielding section including a horizontal light-shielding part positioned between the photoelectric conversion section and the charge-holding section in a thickness direction and extending along the horizontal plane and a vertical light-shielding part orthogonal thereto.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The device includes a photoelectric conversion section; a trench between the photoelectric conversion sections in adjacent pixels; and a PN junction region on a sidewall of the trench and including a P-type region and an N-type region, the P-type region having a protruding region. The device can include an inorganic photoelectric conversion section having a pn junction and an organic photoelectric conversion section having an organic photoelectric conversion film that are stacked in a depth direction within a same pixel; and a PN junction region on a sidewall of the inorganic photoelectric conversion section. The PN junction region can further include a first P-type region and an N-type region; and a second P-type region. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: A photoelectric conversion element includes: a first compound semiconductor layer 31 made of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer 34 formed on the first compound semiconductor layer 31; a second compound semiconductor layer 32 covering the photoelectric conversion layer 34 and made of a second compound semiconductor material having the first conductivity type; a second conductivity type region 35 formed at least in a part of the second compound semiconductor layer 32, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layer 34 surrounding a lateral surface of the photoelectric conversion layer; a first electrode 51 formed on the second conductivity type region; and a second electrode 52 electrically connected to the first compound semiconductor layer 31.