Abstract: A saddle-ride vehicle with improved operability when an attitude of the vehicle changes in the opposite direction in a vehicle width direction in a short period of time. The saddle-ride vehicle includes: a steering actuator that applies torque in a steering direction to a suspension supporting a steering wheel; first detector that detects a roll angular velocity of a vehicle; and a controller that controls the steering actuator, based on the roll angular velocity detected by the first detector, to apply the torque to the suspension, in which the controller: includes modes of the control, the modes including a first control mode that performs control to apply a predetermined first steering torque, and a second control mode that performs control to apply a second steering torque smaller than first steering torque; and switches between the first control mode and the second control mode if a predetermined condition is satisfied.

Abstract: A polyimide resin composition containing a polyimide resin (A) and a phosphinic acid metal salt-based flame retardant (B), the polyimide resin (A) containing repeating structural units of formulae (1) and (2): wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring, and a content ratio of the repeating structural unit of formula (1) with respect to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) is 20 to 70 mol %.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region, a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.

Abstract: A flame-retardant polyimide molding material and a molded article including the flame-retardant polyimide molding material, where the flame-retardant polyimide molding material includes a semi-aromatic polyimide resin (A) and carbon fiber (B), and the flame-retardant polyimide molding material includes 15 to 80 mass % of the carbon fiber (B).

Abstract: A work machine control system includes: a position sensor detecting a position of a work machine traveling on a traveling path; first and second non-contact sensors provided in the work machine and detecting a position of an object around the work machine; a map data creation unit creating map data based on detection data of the position sensor and detection data of the first non-contact sensor; a first position calculation unit calculating a first position of the work machine by matching the map data and the detection data of the first non-contact sensor; a second position calculation unit calculating a second position of the work machine based on detection data of the second non-contact sensor; and an integrated position determination unit determining an integrated position of the work machine by integrating the first and second positions.

Abstract: A semiconductor device includes a semiconductor substrate, a first source region and a first drain region each formed from an upper surface of the semiconductor substrate, a first gate electrode formed on the semiconductor substrate between the first source region and the first drain region via a first gate dielectric film, a first trench formed in the upper surface of the semiconductor substrate between the first gate dielectric film and the first drain region in a gate length direction, a second trench formed in the upper surface of the semiconductor substrate between the gate dielectric film and the first drain region in the gate length direction, the second trench being shallower than the first trench, and a first dielectric film embedded in the first trench and the second trench. The first trench and the second trench are in contact with each other in a gate width direction.

Abstract: A polyimide resin composition containing a polyimide resin (A) and an amorphous resin (B), wherein the polyimide resin (A) contains a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol %, and the amorphous resin (B) comprises a repeating structural unit represented by a predetermined formula (I), and a molded article containing the same: wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring.

Abstract: Performance of a semiconductor device is improved. In a semiconductor substrate (SUB), a trench TR1 and a trench TR2 are formed so as to reach a predetermined depth from an upper surface (TS) of the semiconductor substrate (SUB). A field-plate electrode (FP) is formed at a lower portion of the trench TR1, and a gate-electrode GE1 is formed at an upper portion of the trench TR1. A gate electrode GE2 is formed inside the trench TR2. The depth of the trench TR1 is deeper than the depth of the trench TR2. The trench TR1 is surrounded by the trench TR2 in plan view.

Abstract: A resin molded article having a microphase-separated structure, the resin molded article containing a polyimide resin (A) and a polyether ketone resin (B), the polyimide resin (A) containing repeating structural units of formulae (1) and (2): wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring, a content ratio of the repeating structural unit of formula (1) with respect to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) is 20 to 70 mol %, and a weight average molecular weight Mw is 40,000 to 150,000.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.

Abstract: A management system includes a course data generation unit that generates course data for each of a plurality of unmanned vehicles such that loading work for the plurality of unmanned vehicles by a loader is sequentially performed on a work site where a plurality of the loaders operates; and a priority determination unit that determine a passage order at an intersection on the work site of the plurality of unmanned vehicles traveling according to the course data so as to reduce a total loading loss indicating a total of loss amounts in operation of each of the plurality of the loaders.

Abstract: A method for producing a polyimide resin powder, which involves reacting a tetracarboxylic acid component containing a tetracarboxylic dianhydride and a diamine component containing an aliphatic diamine in the presence of a solvent containing an alkylene glycol solvent of formula (1). In formula (1), Ra1 represents a hydrogen atom or an alkyl group having from 1 to 4 carbon atoms, Ra2 represents a linear alkylene group having from 2 to 6 carbon atoms, and n represents an integer of 1 to 3. The reacting produces a solution containing a polyimide resin precursor. This solution is then heated at an average heating rate of 0.5 to 8° C./min in a temperature range of 70 to 130° C. to imidize the polyimide resin precursor to produce the polyimide resin powder in the solution with a solid content concentration of 15 to 25% by mass.

Abstract: To improve characteristics of a semiconductor device. A first p-type semiconductor region having an impurity of a conductivity type opposite from that of a drift layer is arranged in the drift layer below a trench, and a second p-type semiconductor region is further arranged that is spaced at a distance from a region where the trench is formed as seen from above and that has the impurity of the conductivity type opposite from that of the drift layer. The second p-type semiconductor region is configured by a plurality of regions arranged at a space in a Y direction (depth direction in the drawings). Thus, it is possible to reduce the specific on-resistance while maintaining the breakdown voltage of the gate insulating film by providing the first and second p-type semiconductor regions and further by arranging the second p-type semiconductor region spaced by the space.

Abstract: Provided is a polyimide powder composition containing a thermoplastic polyimide resin powder (A) and silica particles (B) having a volume average particle size D50 of 90 nm or less.

Abstract: A composite substrate includes, in this order: a ceramic plate; a metal layer containing at least one selected from the group consisting of aluminum and an aluminum alloy; and a thermal sprayed layer containing at least one selected from the group consisting of copper and a copper alloy, and an intermetallic compound containing copper and aluminum as constituent elements is scattered between the metal layer and the thermal sprayed layer.

Abstract: A first trench extending in a Y direction is formed in each of a semiconductor substrate located in a cell region and the semiconductor substrate located in an outer peripheral region. A second trench is formed in the semiconductor substrate in the outer peripheral region so as to surround the cell region in a plan view. A p-type body region is formed in the semiconductor substrate in each region. A plurality of p-type floating regions is formed in the semiconductor substrate in the outer peripheral region. A field plate electrode is formed at a lower portion of each of the first trench and the second trench. A gate electrode is formed at an upper portion of the first trench located in the cell region. A floating gate electrode is formed at an upper portion of each of the first trench located in the outer peripheral region and the second trench.

Abstract: A semiconductor device includes a cell region in which MISFETs are formed, and a peripheral region surrounding the cell region in plan view. In the cell region and the peripheral region, an n-type impurity region is formed in a semiconductor substrate. In the semiconductor substrate, an element isolation portion, a p-type impurity region, and an n-type impurity region are formed in the peripheral region so as to surround the cell region in plan view. A p-type impurity region and an n-type impurity region are formed in the semiconductor substrate in the cell region so as to contact the impurity region. The element isolation portion is located in the impurity region and is spaced apart from a junction interface between the impurity region and the impurity region.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region. a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.

Abstract: An optical device includes a light source provided with a plurality of surface-emitting laser elements to emit a laser beam, a scanner to scan the laser beam emitted from the light source, and an optical system disposed in an optical path between the light source and the scanner and to guide the laser beam to the scanner. The optical system includes a first optical element to control a divergence angle of the laser beam emitted from the light source and a second optical element to concentrate the laser beam that has passed through the first optical element onto a to-be-scanned surface of the scanner.

Abstract: A polyimide resin composition having a polyimide resin (A) and a polyether sulfone resin (B), wherein the polyimide resin (A) comprises a repeating structural unit of formula (1) and a repeating structural unit of formula (2), a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol %, and a mass ratio of the component (A) to the component (B), [(A)/(B)], is 0.1/99.9 to 65/35; and a molded article containing the same: where R1 represents a divalent group of 6 to 22 carbon atoms with an alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group of 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group of 6 to 22 carbon atoms and having an aromatic ring.