Abstract: A first trench extending in a Y direction is formed in each of a semiconductor substrate located in a cell region and the semiconductor substrate located in an outer peripheral region. A second trench is formed in the semiconductor substrate in the outer peripheral region so as to surround the cell region in a plan view. A p-type body region is formed in the semiconductor substrate in each region. A plurality of p-type floating regions is formed in the semiconductor substrate in the outer peripheral region. A field plate electrode is formed at a lower portion of each of the first trench and the second trench. A gate electrode is formed at an upper portion of the first trench located in the cell region. A floating gate electrode is formed at an upper portion of each of the first trench located in the outer peripheral region and the second trench.

Abstract: A semiconductor device includes a semiconductor chip, a circuit board, a heat releasing plate, an adhesive member, and a conductive member. The circuit board transmits a signal of the semiconductor chip. The heat releasing plate has the semiconductor chip disposed thereon, and has an opening in a region on the outer side of a semiconductor chip placement region that is a region in which the semiconductor chip is disposed. The adhesive member is disposed in a region on the outer side of the opening on a different surface of the heat releasing plate from the surface on which the semiconductor chip is disposed, and bonds the circuit board and the heat releasing plate to each other. The conductive member connects the semiconductor chip and the circuit board to each other via the opening.

Abstract: A magnetic geared electrical machine includes: a stator including a stator coil; a first rotor including a plurality of pole pieces; a second rotor including a plurality of rotor magnets, and arranged opposite to the stator across the first rotor in a radial direction; a housing having a first inlet opening and a second inlet opening, and supporting the stator; a first inlet cavity defined by at least the housing so as to communicate with the first inlet opening provided in the housing and with a first radial gap between the stator and the first rotor; and a second inlet cavity defined by at least the housing so as to communicate with the second inlet opening provided in the housing and with a second radial gap between the first rotor and the second rotor.

Abstract: A fixing device includes a fixing belt, a pressing roller and a heating part. The heating part includes a heater, a plurality of temperature sensors, a heater holding member and a sensor holding member. The sensor holding member holds the temperature sensors between the heater holding member and the sensor holding member. The heater holding member has observation holes through which the heater is exposed. The heater holding member has a guide part which positions the sensor holding member with respect to the heater holding member. The sensor holding member has an engagement part engaged with the guide part. The sensor holding member holds each of the temperature sensors at a position corresponding to each of the observation holes by engagement of the engagement part with the guide part.

Abstract: Provided is a kneaded material including an ultraviolet absorbing agent that contains at least one compound selected from a compound represented by Formula (1) or a compound represented by Formula (2), and a polymer compound.

Abstract: Provided are a photopolymerizable composition including at least one compound selected from a compound represented by Formula (1) or a compound represented by Formula (2), a polymerizable compound, and a photopolymerization initiator, and a cured substance and an optical member which are formed of the photopolymerizable composition.

Abstract: A semiconductor device includes a cell region in which MISFETs are formed, and a peripheral region surrounding the cell region in plan view. In the cell region and the peripheral region, an n-type impurity region is formed in a semiconductor substrate. In the semiconductor substrate, an element isolation portion, a p-type impurity region, and an n-type impurity region are formed in the peripheral region so as to surround the cell region in plan view. A p-type impurity region and an n-type impurity region are formed in the semiconductor substrate in the cell region so as to contact the impurity region. The element isolation portion is located in the impurity region and is spaced apart from a junction interface between the impurity region and the impurity region.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region. a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.

Abstract: An optical device includes a light source provided with a plurality of surface-emitting laser elements to emit a laser beam, a scanner to scan the laser beam emitted from the light source, and an optical system disposed in an optical path between the light source and the scanner and to guide the laser beam to the scanner. The optical system includes a first optical element to control a divergence angle of the laser beam emitted from the light source and a second optical element to concentrate the laser beam that has passed through the first optical element onto a to-be-scanned surface of the scanner.

Abstract: A polyimide resin composition having a polyimide resin (A) and a polyether sulfone resin (B), wherein the polyimide resin (A) comprises a repeating structural unit of formula (1) and a repeating structural unit of formula (2), a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol %, and a mass ratio of the component (A) to the component (B), [(A)/(B)], is 0.1/99.9 to 65/35; and a molded article containing the same: where R1 represents a divalent group of 6 to 22 carbon atoms with an alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group of 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group of 6 to 22 carbon atoms and having an aromatic ring.

Abstract: A semiconductor device includes a semiconductor substrate, a first source region and a first drain region each formed from an upper surface of the semiconductor substrate, a first gate electrode formed on the semiconductor substrate between the first source region and the first drain region via a first gate dielectric film, a first trench formed in the upper surface of the semiconductor substrate between the first gate dielectric film and the first drain region in a gate length direction, a second trench formed in the upper surface of the semiconductor substrate between the gate dielectric film and the first drain region in the gate length direction, the second trench being shallower than the first trench, and a first dielectric film embedded in the first trench and the second trench. The first trench and the second trench are in contact with each other in a gate width direction.

Abstract: A haul vehicle management system includes: a three-dimensional data acquisition unit that acquires three-dimensional data outside an outline of a traveling area where a haul vehicle can travel; and a course data generation unit that generates a traveling course of the haul vehicle on the basis of outer shape data of the haul vehicle and the three-dimensional data, the traveling course being set in the traveling area.

Abstract: A resin composition containing a liquid crystal polymer (A) and a predetermined polyimide resin (B), wherein the liquid crystal polymer (A) contains at least one repeating structural unit selected from the group consisting of repeating structural units represented by the following formulas (I) to (IV), and a molded article containing the same: wherein a, b, and c represent an average number of repeating structural units.

Abstract: A semiconductor device includes a cell region in which a plurality of unit cells are formed, and an outer peripheral region surrounding the cell region in plan view. Each of the plurality of unit cells includes a semiconductor substrate having a drift region, a body region, a source region, a pair of first column regions, and a gate electrode formed in a trench with a gate insulating film interposed therebetween. A well region is formed on a surface of the drift region in the outer peripheral region. A second column region is formed in the drift region below the well region and extends in Y and X directions so as to surround the cell region. The well region is connected to the body region, and the second column region is connected to the well region.

Abstract: A semiconductor device and a method of manufacturing the same capable of ensuring a sufficient breakdown voltage near a terminal end portion of a cell portion are provided. The cell portion includes a first cell column region and a second cell column region adjacent to each other, and a first cell trench gate and a second cell trench gate arranged between the first cell column region and the second cell column region. An outer peripheral portion includes an outer peripheral trench gate connected to an end portion of each of the first cell trench gate and the second cell trench gate, and a first outer peripheral column region arranged on the cell portion side with respect to the outer peripheral trench gate and extended across the first cell trench gate and the second cell trench gate in plan view.

Abstract: A semiconductor device includes a plurality of unit cells. Each of the plurality of unit cells has a pair of column regions, a pair of trenches formed between the pair of column regions in the X direction, and a pair of gate electrodes formed in the pair of trenches via a gate insulating film, respectively. The two unit cells adjacent in the X direction share one column region of the pair of column regions and are arranged to be symmetrical about the shared column region. Here, a distance between the two trenches, which are adjacent with the one column region interposed therebetween, of the trenches in the two adjacent unit cells is different from a distance between the pair of trenches in the one unit cell.

Abstract: A management system for a transport vehicle includes a storage unit that stores a traveling path outline indicating an outline of a traveling path at a work site and an intersection outline indicating an outline of an intersection at the work site, a designation unit that designates a start point of traveling of the transport vehicle at the work site and an end point of traveling of the transport vehicle, and a connection unit that generates a traveling area outline by connecting the traveling path outline and the intersection outline on the basis of the start point and the end point designated by the designation unit.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.

Abstract: A polyimide resin composition containing a polyimide resin (A) and a polyetherimide sulfone resin (B), wherein the polyimide resin (A) contains a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), and a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol %; and a molded article containing the same. (R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring.

Abstract: An electromagnetic shielding laminated sheet includes: an electromagnetic wave absorbing layer which includes a matrix and carbon nanotubes dispersed in the matrix and which has a bulk density equal to or less than 997 kg/m3; and a metal layer laid on top of the electromagnetic wave absorbing layer.