Abstract: A polyimide resin composition containing a polyimide resin (A) and a phosphinic acid metal salt-based flame retardant (B), the polyimide resin (A) containing repeating structural units of formulae (1) and (2): wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring, and a content ratio of the repeating structural unit of formula (1) with respect to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) is 20 to 70 mol %.

Abstract: A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient ?1 (×10?6/K) of the base plate and a linear thermal expansion coefficient ?2 (×10?6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1).

Abstract: A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value ?1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10?6 to 9×10?6/K, a ratio ?1/?2 of the ?1 to a theoretical value ?2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.

Abstract: A resin molded article having a microphase-separated structure, the resin molded article containing a polyimide resin (A) and a polyether ketone resin (B), the polyimide resin (A) containing repeating structural units of formulae (1) and (2): wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring, a content ratio of the repeating structural unit of formula (1) with respect to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) is 20 to 70 mol %, and a weight average molecular weight Mw is 40,000 to 150,000.

Abstract: To improve characteristics of a semiconductor device. A first p-type semiconductor region having an impurity of a conductivity type opposite from that of a drift layer is arranged in the drift layer below a trench, and a second p-type semiconductor region is further arranged that is spaced at a distance from a region where the trench is formed as seen from above and that has the impurity of the conductivity type opposite from that of the drift layer. The second p-type semiconductor region is configured by a plurality of regions arranged at a space in a Y direction (depth direction in the drawings). Thus, it is possible to reduce the specific on-resistance while maintaining the breakdown voltage of the gate insulating film by providing the first and second p-type semiconductor regions and further by arranging the second p-type semiconductor region spaced by the space.

Abstract: An optical device includes a light source provided with a plurality of surface-emitting laser elements to emit a laser beam, a scanner to scan the laser beam emitted from the light source, and an optical system disposed in an optical path between the light source and the scanner and to guide the laser beam to the scanner. The optical system includes a first optical element to control a divergence angle of the laser beam emitted from the light source and a second optical element to concentrate the laser beam that has passed through the first optical element onto a to-be-scanned surface of the scanner.

Abstract: A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion. The termination portion includes a connection trench gate provided along a first direction. The cell portion includes: a plurality of first column regions provided along a second direction intersecting the first direction; and a plurality of trench gates provided along the second direction such that two trench gates are arranged between the two adjacent first column regions. The plurality of trench gates extend from the cell portion to the termination portion and are connected to the connection trench gate. The plurality of first column regions extend from the cell portion to the termination portion, and the termination portion includes a plurality of second column regions different from the plurality of first column regions.

Abstract: A polyimide resin composition obtained by blending a polyimide resin (A) and glass fiber (B), the polyimide resin (A) containing a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) being 20 to 70 mol %, wherein R1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X1 and X2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring.

Abstract: A work machine control system includes: a position sensor detecting a position of a work machine traveling on a traveling path; first and second non-contact sensors provided in the work machine and detecting a position of an object around the work machine; a map data creation unit creating map data based on detection data of the position sensor and detection data of the first non-contact sensor; a first position calculation unit calculating a first position of the work machine by matching the map data and the detection data of the first non-contact sensor; a second position calculation unit calculating a second position of the work machine based on detection data of the second non-contact sensor; and an integrated position determination unit determining an integrated position of the work machine by integrating the first and second positions.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region. a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.

Abstract: A control system is provided with a position detection device which detects a position of a work machine, a contactless sensor which detects an object around the work machine in a contactless manner, a position calculation unit which calculates a position of the work machine on the basis of at least map data indicating a position of the object and detection data of the contactless sensor, and a diagnosis unit which compares the position of the work machine derived from detection data of the position detection device and the position of the work machine calculated by the position calculation unit and diagnoses that there is an abnormality in either the detection data of the position detection device or a calculation result of the position calculation unit.

Abstract: A semiconductor device which can secure a high breakdown voltage and to which a simplified manufacturing process is applicable and a method for manufacturing the semiconductor device are provided. An n+ buried region has a floating potential. An n-type body region is located on a first surface side of the n+ buried region. A p+ source region is located in the first surface and forms a p-n junction with the n-type body region. A p+ drain region is located in the first surface spacedly from the p+ source region. A p-type impurity region PIR is located between the n+ buried region and the n-type body region and isolates the n+ buried region and the n-type body region from each other.

Abstract: An information processing apparatus includes a memory and a processor coupled to the memory. The processor is configured to monitor each of loads of processor cores performing processes for which a parallel operation is inhibited. The processor cores are included in the information processing apparatus. The processor is configured to identify a first process that is being performed by a first processor core having a load that equals or exceeds a predetermined threshold value of a first load from among the processor cores based on a correspondence relationship between the processes and the first processor core.

Abstract: A ceramic circuit board includes a ceramic substrate and metal layers provided to both surfaces of the ceramic substrate and containing Al and/or Cu, wherein a measurement value ?1 of a linear thermal expansion coefficient at 25° C. to 150° C. is 5×10?6 to 9×10?6/K, a ratio ?1/?2 of the ?1 to a theoretical value ?2 of the linear thermal expansion coefficient at 25° C. to 150° C. is 0.7 to 0.95, and at least one of the metal layers forms a metal circuit.

Abstract: A power module includes a base plate, a ceramic insulating substrate bonded on the base plate, and a semiconductor element bonded on the ceramic insulating substrate, wherein a surface of the base plate on a side opposite to the ceramic insulating substrate has a warp with a convex shape, and a linear thermal expansion coefficient ?1 (×10?6/K) of the base plate and a linear thermal expansion coefficient ?2 (×10?6/K) of the ceramic insulating substrate when a temperature decreases in the range of 25° C. to 150° C. satisfy the following Expression (1).

Abstract: A work machine management system includes: a position detecting device to detect a position of a work machine traveling on a travel route; a non-contact sensor to detect an object in a vicinity of the travel route in a non-contact manner; map data to accumulate information on existence and a position of the object in the travel route on the basis of detection data obtained by the position detecting device and detection data obtained by the non-contact sensor; a travel route generation unit to generate the travel route where the work machine travels; and an identifying unit to identify perfection of the map data.

Abstract: A work machine management system includes: a position detector detecting a position of a work machine traveling on a travel route; a non-contact sensor detecting an object in a vicinity of the travel route in a non-contact manner; map data to accumulate information on existence and a position of the object in the travel route based on detection data obtained by the position detector and detection data obtained by the non-contact sensor; a travel route generator generating the travel route where the work machine travels; and an identifying unit to identify an area or a travel route having low perfection of map data of a travel route where the work machine travels. The travel route generator generates a travel route so as to cause the work machine not to pass the area or the travel route having the low perfection of the map data.

Abstract: According to an embodiment, a simulation method of a simulation device that simulates a semiconductor storage device connected to a first controller via a first communication channel. The simulation method includes: receiving first data from a portion of the first communication channel; receiving second data from the portion; and simulating a response of the semiconductor storage device based on first information. The first data is data which has been transferred from the first controller to the semiconductor storage device and of which writing is requested from the first controller. The second data is data which has been stored in the semiconductor storage device, and transferred from the semiconductor storage device to the first controller, and of which reading is requested from the first controller. The first information indicates a feature of the semiconductor storage device obtained based on comparison between the first data and the second data.

Abstract: An optical device includes: a substrate having a first surface, and a second surface opposite of the first surface; a plurality of surface emitting laser elements provided on the first surface of the substrate and configured to emit light in a direction intersecting the first surface; a plurality of optical elements disposed on the second surface so as to respectively correspond to the plurality of surface emitting laser elements; and an anti-reflection structure between the substrate and the plurality of optical elements.

Abstract: An ultrasonic therapy apparatus includes a plurality of ultrasonic transducers, a processor that identifies a position of an affected part and determines a focal point of ultrasonic waves radiated by the plurality of ultrasonic transducers based on the determined position of the affected part, and a drive circuit that generates a drive signal for driving the plurality of ultrasonic transducers at individual timings so that the ultrasonic waves are focused at the determined focal point.