Abstract: A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate.

Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.

Abstract: The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates.

Abstract: The present invention provides a wafer process system that incorporates a multiple wafer processing system, such as a tandem wafer processing system, and a front end staging apparatus. The front end staging apparatus includes a first transfer chamber in communication with a pair of loadlocks for introducing wafers into the system. A robot within the first transfer chamber moves individual wafers between the loadlocks, optional single wafer process chambers radially disposed about and in communication with the first transfer chamber, and a pair of intermediate staging chambers. The intermediate staging chambers communicate with both the first transfer chamber and a second transfer chamber of the tandem process system. A robot within the second transfer chamber moves the wafers, in tandem, between the intermediate staging chambers and tandem process chambers disposed about the periphery and communicating with the second transfer chamber.

Abstract: An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure.

Abstract: A vacuum processing system has a transfer chamber with a slit valve at which is attached a process chamber and with a slit valve insert disposed in the slit valve for matching up with the process chamber. The slit valve may be made of two pieces, an outer portion that slides into the transfer chamber's slit valve opening from the outside of the transfer chamber, and an inner portion that slides into the outer portion from the inside of the transfer chamber. The portions of the insert permit any process chamber to be attached to any slit valve opening. The outer portion may not be removed from the slit valve opening when a process chamber is attached to the transfer chamber, but the inner portion may be easily removed for servicing regardless of in whether a process chamber is attached.

Abstract: A method and apparatus for providing integrated bake and chill thermal cycling applied to a material substrate is provided. The apparatus is a module comprising an integrated bake and chill plate with one or more fluid channels in a generally spiraling arrangement. The fluid channels have inlets and outlets near the center and perimeter of the integrated bake and chill plate. Additionally, the fluid channels can have microchannels through portions thereof. The module can also comprise one or more thermoelectric devices, a thermally conductive plate on which the substrate directly or indirectly rests, a printed circuit board, and a variable power source. The integrated bake and chill plate, the thermally conductive plate and the thermoelectric devices are all in thermal contact with each other.

Abstract: A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material in a pumping channel exhausting the chamber. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

Abstract: A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate.

Abstract: An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered.

Abstract: A sputtering chamber includes a substrate support member, for positioning a substrate thereon, and a sputtering target therein. At least a portion of the sputtering surface of the target is located non-parallel to the substrate. In one aspect of the invention, the sputtering surface of the target is conical, and it tapers as it approaches the substrate.

Abstract: A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.

Abstract: A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

Abstract: A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

Abstract: A method for simultaneously processing a workpiece using a plasma and cleaning the reactor in which processing takes place is disclosed. The plasma generated in the reactor performs simultaneous workpiece processing and reactor cleaning. Reactor cleaning may be accomplished by directing a portion of the plasma at an inner surface of the reactor such as by a power source auxiliary to that used to produce the processing plasma. An apparatus for carrying out a method for simultaneously processing a workpiece with a plasma and cleaning a reactor of etch residues generated from processing is disclosed.

Abstract: A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180.degree. apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite directions to extend one or the other of said carriers radially from said central hub, and for rotating the arms in the same direction to effect rotation of the carriers.

Abstract: A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a clamp ring suspended in the chamber on a chamber shield. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the clamp ring off the shield. After deposition is complete, the support member retracts through the shield, to reposition the clamp on the shield. In the event that a deposition material layer has formed between the substrate and the clamp ring, the clamp ring includes a plurality of actuators thereon which force the substrate out of the clamp ring as the clamp ring is repositioned on the shield.

Abstract: A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements, some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and a deposition ring. The deposition ring removably rests upon a flange extending from the outer periphery of a substrate support pedestal. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.