Abstract: A magnetron sputtering process and apparatus for cleaning a target, thereby eliminating back sputtered particles from the target surface and effecting uniform erosion of the target is provided. A deposition chamber comprises a magnetron assembly, a shutter mechanism, D.C. and R.F. power sources, and means for alternatively switching the power sources for sputter deposition and target cleaning. As an example, application of D.C. power sputters target material in regions located between the poles of the magnets of the magnetron assembly. At selected intervals during which a processed substrate is removed from the chamber, R.F. power is then applied to the chamber to establish a plasma which sputters the target in lesser eroded regions and removes previously deposited back sputtered particles thereon.

Abstract: Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

Abstract: The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species.

Abstract: Apparatus for promoting heat transfer between a first volume (chamber volume) and a second volume (expandable, substrate support platform volume). Specifically, the apparatus comprises: a chamber defining a chamber volume that contains a chamber atmosphere, e.g., a partial vacuum; a substrate support platform that defines an expandable volume that contains a heat transfer medium, e.g., air; and a seal that isolates the chamber volume from the heat transfer medium. The substrate support platform further comprises: a substrate support platen that has a first surface located within the chamber volume and a second surface located within the expandable volume; a housing sealed to the second surface of the substrate support platen; and a expandable member such as a bellows, attached to the housing, to provide for expansion of the expandable volume that is defined by the housing and the bellows. The housing is typically fabricated of metal and the substrate support is typically fabricated of ceramic.

Abstract: A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

Abstract: A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180.degree. apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite directions to extend one or the other of said carriers radially from said central hub, and for rotating the arms in the same direction to effect rotation of the carriers.

Abstract: The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure.The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other.

Abstract: A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield.

Abstract: The present invention provides a shield arrangement that prevents deposition in the area of the chamber surrounding the substrate. This shield arrangement is equipped with a wall-like member which surrounds a substrate, and includes a projecting annular flange and a substrate support which extends in the horizontal direction beyond the substrate, and includes a groove therein. The annular flange is received in the groove to shield the deposition region of the chamber from the remainder of the chamber.

Abstract: The apparatus and method of the present invention provide even and repeatable heat transfer to and from essentially the entire substrate used in semiconductor processing. In particular, the support platform upon which the substrate sets during processing is designed to permit heat transfer to the very edge of the substrate so that substrate space unavailable for processing is minimized.The support platform comprises a substrate-facing surface 211 including at least one fluid supply source 214; a continuous, platform-based fluid flow barrier 212; and at least one opening 234 through substrate-facing surface 211 through which a substrate lift finger 221 can be operated. Fluid flow barrier 212 contacts the back side (non-processed side) of the substrate at a location very near the exterior edge of the substrate.To prevent heat transfer fluid from flowing downward through the lift finger openings 234, a lift finger sealing cover 222 is employed.

Abstract: Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part be cleaned ultrasonically to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.

Abstract: A heater and pedestal actuator is provided to actuate the pedestal of a deposition chamber from a first position wherein a wafer may be placed thereon to a second position adjacent to the deposition target. To adjust the inward travel of the heater to compensate for target erosion, the actuator includes a worm drive apparatus driven by a stepper motor. The worm drive is pitched, and the stepper motor is selected, to allow fine movement of the heater on the order of less than 0.01 mm for each arcuate step of the stepper motor. A computer is used to actuate the stepper motor, and cause additional stepper motor actuation, to increase the travel of the heater toward the target to compensate for target erosion. Additionally, the computer may vary the speed of the worm drive rotation, to create different heater travel speeds within the chamber.

Abstract: A sputtering apparatus deposits a material layer on a substrate. The apparatus includes a tube extending partially between the target and substrate, to selectively prevent portions of the target material flux from reaching the substrate to provide a more symmetrical deposition flux at each region of the substrate. In one aspect, the tube includes a single tubular wall which provides an inner and an outer particle blocking surface. The upper end of the inner surface of the tube is positioned to block, from the substrate edge, that portion of the sputtering target surface inward of the substrate edge which exceeds the target surface located outward of the substrate edge, and the lower surface of the outer wall is located to block access of particles sputtered from the edge of the target to the center of the substrate.

Abstract: A sputtering apparatus deposits a layer of material on a substrate. The apparatus includes a screening member, such as a plate collimator or a tube collimator, located between the target and substrate. A motor drive reverses the respective positions of the two opposite sides of the screening device which respectively face the substrate and the target.

Abstract: The present invention pertains to an apparatus useful in semiconductor processing. The apparatus can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other.

Abstract: The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure.The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other.

Abstract: A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the wafer and clamp from receiving depositing particles so that a coating formed on the wafer makes continuous contact with the clamping ring in only a few narrow regions that act as conductive bridges when the depositing layer is conductive.

Abstract: A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180.degree. apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite directions to extend one or the other of said carriers radially from said central hub, and for rotating the arms in the same direction to effect rotation of the carriers.

Abstract: Replaceable parts for a vacuum chamber including an aluminum lid and a quartz door and shield, are treated to clean and roughen their surfaces to increase adhesion of materials deposited thereon during substrate processing in said chamber, thereby reducing downtime of the equipment. The parts can be chemically cleaned, rinsed to remove the chemicals and dried in a first step; subjected to bead blasting to roughen the surface of the part and improve adhesion thereon of deposited material; in a succeeding step the part to be cleaned ultrasonically in order to remove all loose particles; and in a last step the parts rinsed and dried to remove moisture, prior to packaging or using the part. A novel single-piece machined aluminum lid has an extension wall from a first surface that fits into the door of the chamber, and an overlying portion of said first surface that sealingly engages the door when the lid is closed.