Abstract: A deposition chamber includes a target and an acceptor for supporting a wafer during a deposition cycle. The acceptor is made out of a pasting material in order that a pasting cycle can be run periodically in the deposition chamber to form a barrier between the layers of the target material to prevent the layer of target material from becoming too thick and thereby cracking and flaking. A shield protects the interior of the chamber during a deposition cycle. A collimator may be present between the target and the acceptor. A plasma is formed in the chamber and selectively attracted toward the target for deposition of target material onto a wafer or toward the acceptor for pasting acceptor material onto the shield and the bottom of the collimator, if present. A plurality of wafers are cycled through the deposition chamber for depositing the deposition material on their surface.

Abstract: The apparatus and method of the present invention provide even and repeatable heat transfer to and from essentially the entire substrate used in semiconductor processing. In particular, the support platform upon which the substrate sets during processing is designed to permit heat transfer to the very edge of the substrate so that substrate space unavailable for processing is minimized. The support platform comprises a substrate-facing surface 211 including at least one fluid supply source 214; a continuous, platform-based fluid flow barrier 212; and at least one opening 234 through substrate-facing surface 211 through which a substrate lift finger 221 can be operated. Fluid flow barrier 212 contacts the back side (non-processed side) of the substrate at a location very near the exterior edge of the substrate. To prevent heat transfer fluid from flowing downward through the lift finger openings 234, a lift finger sealing cover 222 is employed.

Abstract: A self cleaning collimator is provided which avoids a buildup of deposited material such that the collimator does not become clogged, deposition rates remain constant and flakes of deposited material are not formed. The collimator is formed of a dielectric material. The collimator and the target are physically mounted in contact with one another. During a deposition process, a portion of the deposited material will unavoidably also be deposited onto the walls of the passages through the collimator. Eventually, the buildup of such deposited material will provide an electrical path from the deposited material to the target. When this occurs, the electrical path will allow the material deposited on the walls of the passages through the collimator to act as a portion of the target. This material will then be depleted as it is deposited onto the semiconductor wafer 112.

Abstract: A planar magnetron sputtering source having a pair of pole pieces configured to produce a uniform coating, excellent step coverage and excellent step coverage uniformity of a wafer. Between the two pole pieces is a gap within which the magnetic field and electric field produce an electron trap. The shape of the gap produces a depth of sputter profile in the target that results in the uniform coating, excellent step coverage and excellent step coverage uniformity.

Abstract: A clamping ring and temperature regulated platen for clamping a wafer to the platen and regulating the temperature of the wafer. The force of the clamping ring against the wafer is produced by the weight of the clamping ring. A roof shields all but a few contact regions of the interface between the wafer and clamp from receiving depositing particles so that a coating formed on the wafer makes continuous contact with the clamping ring in only a few narrow regions that act as conductive bridges when the depositing layer is conductive.

Abstract: A slit valve apparatus associated with an aperture in a chamber wall through which a semiconductor wafer may be passed along a transfer plane. The apparatus is characterized by a valve seat which is angled relative to the transfer plane and a door which moves linearly along an axis substantially perpendicular to the valve seat. All frictionally engaged parts of the slit valve assembly are isolated from the interior of the chamber by a bellow sleeve to reduce the formation of particles. The method is characterized by the steps of surrounding the aperture with a first seating surface defining a sealing plane which is angularly disposed with respect to the transfer plane and engaging or disengaging a second seating surface with the first seating surface by linearly moving the second seating surface in a direction perpendicular to the sealing plane.

Abstract: Removable shutter apparatus for a deposition or etching apparatus including a shuttering mechanism disposed within a processing chamber and adapted to carry a shutter plate between a retracted position and an extended position wherein it is engaged by a lifting assembly and moved into position closing the normal plating aperture as if it were a substrate to be processed. When a new product substrate is presented for processing, the lifting assembly will lower the shutter plate back onto the shuttering mechanism and it will be moved to its retracted position out of the way of the normal handling and processing operation. Because the shutter plate is geometrically similar to the product substrate and is handled by the same lift assembly, the same robotic shuttling mechanism used to transport product substrates into and out of the chamber may be used to periodically remove and replace a used shutter plate with a new plate without shutting down the system.

Abstract: A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chambers to facilitate the use of a very high degree of vacuum in the processing chambers without lengthy pump down times. Separate robot chambers are associated with the vacuum processing chambers and the load lock(s). In addition, separate transport paths are provided between the two robot chambers to facilitate loading and unloading of workpieces. Pre-treatment and post-treatment chambers may be incorporated in the two transport paths.

Abstract: The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate is placed between the sputtering target and the substrate, such that a collimated stream of sputtered material is deposited upon the substrate. The collimated stream provides a seed layer which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate. The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer, whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved.