Abstract: A data storage device includes a NAND flash memory, an executable interface and a controller for receiving, from a host, via the executable interface, an instruction to access the NAND flash memory at a virtual address and for translating the virtual address to a physical address of the volatile memory. Preferably, the controller also provides boot functionality to the host.

Abstract: A method for data storage includes storing two or more data items in a non-volatile memory. Redundancy information is calculated over the data items, and the redundancy information is stored in a volatile memory. Upon a failure to retrieve a data item from the non-volatile memory, the data item is reconstructed from remaining data items stored in the non-volatile memory and from the redundancy information stored in the volatile memory.

Abstract: A data storage method includes, in a memory controller that accepts memory access commands from a host for execution in one or more memory units, holding a definition of a policy to be applied by the memory controller in the execution of the memory access commands in the memory units. The policy is reported from the memory controller to the host so as to cause the host to format memory access commands based on the reported policy.

Abstract: A method includes accepting data for storage in a memory that is partitioned into multiple memory regions. A memory region is selected for storing the data. At least part of the data is stored in the selected memory region, subject to verifying that all the storage operations applied to the selected memory region are performed within a predefined maximum time interval.

Abstract: A data storage device includes a NAND flash memory, an executable interface and a controller for receiving, from a host, via the executable interface, an instruction to access the NAND flash memory at a virtual address and for translating the virtual address to a physical address of the volatile memory. Preferably, the controller also provides boot functionality to the host.

Abstract: A method for data storage includes storing data in a memory including multiple analog memory cells arranged in blocks. A first subset of the blocks is defined for storing first data with a first storage density, and a second subset of the blocks is defined for storing second data with a second storage density, larger than the first storage density. In each of the first and second subsets, one or more blocks are allocated to serve as spare blocks and blocks that become faulty are replaced with the spare blocks. Upon detecting that a number of the spare blocks in the second subset has decreased below a predefined threshold, the data is copied from at least one block in the second subset to the first subset, and the at least one block is added to the spare blocks of the second subset.

Abstract: A method for data storage includes, in a first programming phase, storing first data in a group of analog memory cells by programming the memory cells in the group to a set of initial programming levels. In a second programming phase that is subsequent to the first programming phase, second data is stored in the group by: identifying the memory cells in the group that were programmed in the first programming phase to respective levels in a predefined partial subset of the initial programming levels; and programming only the identified memory cells with the second data, so as to set at least some of the identified memory cells to one or more additional programming levels that are different from the initial programming levels.

Abstract: A method for storing data in a memory that includes multiple memory blocks, includes running a compaction process that selects one or more memory blocks containing both valid data and invalid data, copies the valid data from the selected memory blocks to other storage locations, and then erases the selected memory blocks. At least one memory block, which meets a criterion predictive of imminent invalidation of at least some of the data in the block, is identified. Selection of the identified memory block in the compaction process is inhibited.

Abstract: A data storage method includes identifying, in a set of data items associated with respective logical addresses for storage in a memory, a first subset of the logical addresses associated with the data items containing application data, and a second subset of the logical addresses associated with the data items containing parity information that has been calculated over the application data. The data items associated with the first identified subset are stored in one or more first physical memory areas of the memory, and the data items associated with the second identified subset are stored in one or more second physical memory areas of the memory, different from the first physical memory areas. A memory management task is performed independently in the first physical memory areas and in the second physical memory areas.

Abstract: A method includes storing data in a non-volatile memory that includes multiple memory blocks. At least first and second regions are defined in the non-volatile memory. A definition is made of a first over-provisioning ratio between a first logical address space and a first physical memory space of the first region, and a second over-provisioning ratio, different from the first over-provisioning ratio, between a second logical address space and a second physical memory space of the second region. Portions of the data are compacted, individually within each of the first and second regions and independently of the other region, by copying the portions from one or more source memory blocks to one or more destination memory blocks using the first and second over-provisioning ratios, respectively.

Abstract: A method includes storing data in a non-volatile memory that includes multiple memory blocks. At least first and second regions are defined in the non-volatile memory. A definition is made of a first over-provisioning ratio between a first logical address space and a first physical memory space of the first region, and a second over-provisioning ratio, different from the first over-provisioning ratio, between a second logical address space and a second physical memory space of the second region. Portions of the data are compacted, individually within each of the first and second regions and independently of the other region, by copying the portions from one or more source memory blocks to one or more destination memory blocks using the first and second over-provisioning ratios, respectively.

Abstract: A method for data storage includes, in a first programming phase, storing first data in a group of analog memory cells by programming the memory cells in the group to a set of initial programming levels. In a second programming phase that is subsequent to the first programming phase, second data is stored in the group by: identifying the memory cells in the group that were programmed in the first programming phase to respective levels in a predefined partial subset of the initial programming levels; and programming only the identified memory cells with the second data, so as to set at least some of the identified memory cells to one or more additional programming levels that are different from the initial programming levels.

Abstract: A method includes storing data in a non-volatile memory that includes multiple memory blocks. At least first and second regions are defined in the non-volatile memory. A definition is made of a first over-provisioning ratio between a first logical address space and a first physical memory space of the first region, and a second over-provisioning ratio, different from the first over-provisioning ratio, between a second logical address space and a second physical memory space of the second region. Portions of the data are compacted, individually within each of the first and second regions and independently of the other region, by copying the portions from one or more source memory blocks to one or more destination memory blocks using the first and second over-provisioning ratios, respectively.

Abstract: A method for data storage includes, in a first programming phase, storing first data in a group of analog memory cells by programming the memory cells in the group to a set of initial programming levels. In a second programming phase that is subsequent to the first programming phase, second data is stored in the group by: identifying the memory cells in the group that were programmed in the first programming phase to respective levels in a predefined partial subset of the initial programming levels; and programming only the identified memory cells with the second data, so as to set at least some of the identified memory cells to one or more additional programming levels that are different from the initial programming levels.

Abstract: A method executed by a circuit for counting electrons in storage cells in an array of at least two storage cells is provided. The method includes providing a storage array of at least two storage cells, and each of said at least two storage cells containing an unknown amount of electrons. A receiving array of at least two receiving cells is provided, where said at least two receiving cells initially contain no electrons. Then, extracting a layer of said electrons from said storage array of cells and inserting said layer into corresponding locations in said receiving array. The method then repeats said steps of extracting and inserting while at least one of said at least two storage cells is not empty. The method counts, for each said storage cell in said storage array, a productive-extraction amount.

Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells. The data is stored in a first group of the memory cells by programming a second group of the memory cells so as to cause the second group to generate interference in the first group, and individually erasing the first group while verifying that analog levels of the memory cells in the first group subject to the interference are within a predefined bound following erasure. After erasing the first group, the first group of the memory cells is programmed with the data.

Abstract: A method for data storage includes storing data in a group of analog memory cells by writing respective storage values into the memory cells in the group. One or more of the memory cells in the group are read using a first readout operation that senses the memory cells with a first sense time. At least one of the memory cells in the group is read using a second readout operation that senses the memory cells with a second sense time, longer than the first sense time. The data stored in the group of memory cells is reconstructed based on readout results of the first and second readout operations.

Abstract: A method for data storage includes supplying data to and from a host to a storage memory via a secure data path. A first CPU is employed to control operation of the storage memory, and a second CPU is employed to control operation of the secure data path.

Abstract: A method for data storage includes providing at least first and second readout configurations for reading storage values from analog memory cells, such that the first readout configuration reads the storage values with a first sense time and the second readout configuration reads the storage values with a second sense time, shorter than the first sense time. A condition is evaluated with respect to a read operation that is to be performed over a group of the memory cells. One of the first and second readout configurations is selected responsively to the evaluated condition. The storage values are read from the group of the memory cells using the selected readout configuration.

Abstract: Methods, apparatus and computer readable medium for writing data into a flash memory device are disclosed. In some embodiments, the data is written in a writing mode selected in accordance with an extent to which the flash memory storage device or a flash die thereof is full of previously-stored data. The presently disclosed techniques may be implemented on the “device-side” (for example, by a device controller of the flash device) and/or on the “host-side.” In some embodiments, the selected writing mode is a bits-per-cell density mode. In some embodiments, the selected writing mode is a “slower” or “faster” writing mode. The presently disclosed techniques relate to SBC as well as MBC devices.