Patents by Inventor Bainian Qian
Bainian Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20180345448Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.Type: ApplicationFiled: June 6, 2017Publication date: December 6, 2018Inventors: Jonathan G. Weis, Nan-Rong Chiou, George C. Jacob, Bainian Qian
-
Patent number: 10144115Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: May 24, 2016Date of Patent: December 4, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
-
Publication number: 20180311792Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.Type: ApplicationFiled: May 1, 2017Publication date: November 1, 2018Inventors: Bainian Qian, George C. Jacob, Andrew Wank, David Shidner, Kancharla-Arun K. Reddy, Donna Marie Alden, Marty W. DeGroot
-
Patent number: 10105825Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: October 23, 2018Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
-
Patent number: 10092998Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: May 24, 2016Date of Patent: October 9, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
-
Publication number: 20180281149Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Inventors: Bainian Qian, Fengji Yeh, Te-Chun Wang, Sheng-Huan Tseng, Kevin Wen-Huan Tung, Marty W. DeGroot
-
Patent number: 10011002Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: July 3, 2018Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
-
Publication number: 20170361421Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.Type: ApplicationFiled: June 17, 2016Publication date: December 21, 2017Inventors: Thomas P. Willumstad, Bainian Qian, Rui Xie, Kenjiro Ogata, George C. Jacob, Marty W. DeGroot
-
Patent number: 9776300Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: GrantFiled: May 24, 2016Date of Patent: October 3, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
-
Patent number: 9731398Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.Type: GrantFiled: August 22, 2014Date of Patent: August 15, 2017Assignees: Rohm and Haas Electronic Materials CMP Holding, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Raymond L. Lavoie, Jr., Marty W. DeGroot, Benson Lee
-
Patent number: 9630293Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: April 25, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Jeffrey James Hendron
-
Patent number: 9586305Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: GrantFiled: June 26, 2015Date of Patent: March 7, 2017Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
-
Patent number: 9586304Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material has a Tgel temperature and contains fluid-filled polymeric microspheres. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The preexpanded and unexpanded fluid-filled polymeric microspheres each have a Tstart temperature where diameter of the preexpanded and unexpanded fluid-filled polymeric microspheres increases and a Tmax temperature where gas escapes to decrease diameter of the expanded and unexpanded fluid-filled polymeric microspheres. The cured polyurethane matrix contains preexpanded and expanded fluid-filled polymeric microspheres.Type: GrantFiled: December 19, 2014Date of Patent: March 7, 2017Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Bainian Qian, Andrew Wank, George C. Jacob
-
Patent number: 9539694Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.Type: GrantFiled: June 26, 2015Date of Patent: January 10, 2017Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Julia Kozhukh, Teresa Brugarolas Brufau, Bainian Qian
-
Publication number: 20160379840Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of >10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.Type: ApplicationFiled: May 24, 2016Publication date: December 29, 2016Inventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, David Michael Veneziale, Yuhua Tong, Diego Lugo, Jeffrey B. Miller, George C. Jacob, Marty W. DeGroot, Tony Quan Tran, Marc R. Stack, Andrew Wank, Fengji Yeh
-
Publication number: 20160375544Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses; wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: Julia Kozhukh, Teresa Brugarolas Brufau, Bainian Qian
-
Publication number: 20160375554Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: May 24, 2016Publication date: December 29, 2016Inventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
-
Publication number: 20160375552Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, David Michael Veneziale, Yuhua Tong, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Andrew Wank, Jeffrey James Hendron
-
Publication number: 20160375553Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: David Michael Veneziale, Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh, Yuhua Tong, Jeffrey B. Miller, Diego Lugo, George C. Jacob, Marty W. DeGroot, Andrew Wank, Fengji Yeh
-
Publication number: 20160375545Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.Type: ApplicationFiled: June 26, 2015Publication date: December 29, 2016Inventors: Bainian Qian, Julia Kozhukh, Teresa Brugarolas Brufau, Diego Lugo, George C. Jacob, Jeffrey B. Miller, Tony Quan Tran, Marc R. Stack, Jeffrey James Hendron