Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing method is provided comprising: providing a substrate, wherein the substrate comprises a silicon oxide and a silicon nitride; providing a polishing slurry; providing polishing pad, comprising: a polishing layer having a composition that is a reaction product of ingredients, comprising: a polyfunctional isocyanate and an amine initiated polyol curative; wherein the stoichiometric ratio of the amine initiated polyol curative to the polyfunctional isocyanate is selected to tune the removal rate selectivity of the polishing layer; creating dynamic contact between the polishing surface and the substrate; dispensing the polishing slurry on the polishing pad at or near the interface between the polishing surface and the substrate; and, removing at least some of the silicon oxide and the silicon nitride from the substrate.

Abstract: The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The fluid-filled-microspheres is polymeric and has an average diameter of 10 to 80 ?m and the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6.

Abstract: The polishing pad is suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a polishing surface, an opening through the polishing pad and a transparent window within the opening in the polishing pad. The transparent window has a concave surface with a depth that increases with use of the polishing pad. A signal region slopes downward into the central region for facilitating debris removal and a debris drainage groove extending through the central region into the polishing pad. Rotating the polishing pad with polishing fluid in the debris drainage groove sends debris from the central region into the polishing pad through the debris drainage groove.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a continuous non-fugitive polymeric phase and a discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the discontinuous non-fugitive polymeric phase; wherein the continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the discontinuous non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: The polishing pad is suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a polishing surface, an opening through the polishing pad and a transparent window within the opening in the polishing pad. The transparent window has a concave surface with a depth that increases with use of the polishing pad. A signal region slopes downward into the central region for facilitating debris removal and a debris drainage groove extending through the central region into the polishing pad. Rotating the polishing pad with polishing fluid in the debris drainage groove sends debris from the central region into the polishing pad through the debris drainage groove.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material contains 4.2 to 7.5 weight percent fluid-filled polymeric microspheres in the isocyanate-terminated molecule. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The liquid polyurethane material contains a blend of preexpanded and unexpanded fluid-filled polymeric microspheres having a relative viscosity ? ? 0 of 1.1 to 7. Then the liquid polyurethane material solidifies into a polyurethane matrix that contains preexpanded and expanded fluid-filled polymeric microsphere for forming the polishing pad.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; an endpoint detection window; subpad; and, a stack adhesive; wherein the subpad includes plurality of apertures in optical communication with the endpoint detection window; and, wherein the polishing surface of the polishing layer is adapted for polishing of a substrate.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; an endpoint detection window; subpad; and, a stack adhesive; wherein the subpad includes plurality of apertures in optical communication with the endpoint detection window; and, wherein the polishing surface of the polishing layer is adapted for polishing of a substrate.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material has a Tgel temperature and contains fluid-filled polymeric microspheres. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The preexpanded and unexpanded fluid-filled polymeric microspheres each have a Tstart temperature where diameter of the preexpanded and unexpanded fluid-filled polymeric microspheres increases and a Tmax temperature where gas escapes to decrease diameter of the expanded and unexpanded fluid-filled polymeric microspheres. The cured polyurethane matrix contains preexpanded and expanded fluid-filled polymeric microspheres.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material contains 4.2 to 7.5 weight percent fluid-filled polymeric microspheres in the isocyanate-terminated molecule. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The liquid polyurethane material contains a blend of preexpanded and unexpanded fluid-filled polymeric microspheres having a relative viscosity ? ? 0 of 1.1 to 7. Then the liquid polyurethane material solidifies into a polyurethane matrix that contains preexpanded and expanded fluid-filled polymeric microsphere for forming the polishing pad.

Abstract: The invention provides a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad is a cast polyurethane polymeric matrix formed from an isocyanate-terminated molecule and a curative agent. The cast polyurethane polymeric matrix contains 4.2 to 7.5 weight percent fluid-filled microspheres in the isocyanate-terminated molecule. The fluid-filled-microspheres is polymeric and has an average diameter of 10 to 80 ?m and the polishing pad having a conditioner sensitivity (CS) of 0 to 2.6.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aliphatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 99 wt % of a difunctional curative; and, 1 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 5.5 to 9.5 wt % unreacted NCO groups, wherein the isocyanate terminated urethane prepolymer is a reaction product of ingredients comprising: an aromatic polyfunctional isocyanate; and, a prepolymer polyol; and, a curative system, comprising: 0 to 90 wt % of a difunctional curative; and, 10 to 100 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.

Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.

Abstract: A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ?0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ?80%.

Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.