Abstract: Micro-scale passive devices, such as transformers and capacitors, having an insulator layer with insulative particles and/or conductive or nonlinear conductive particles disposed therein. The insulative particles disposed in the insulator layer can increase a breakdown electric field of the device, and the conductive or nonlinear conductive particles disposed in the insulator layer can reduce a maximum electric field of the device. Increasing the breakdown electric field of the device and/or reducing the maximum electric field of the device can increase the lifespan of a micro-scale passive device, and/or may allow the device to operate at a higher threshold electric field without breakdown of the device.

Abstract: Micro-scale passive devices, such as transformers and capacitors, having an insulator layer with insulative particles and/or conductive or nonlinear conductive particles disposed therein. The insulative particles disposed in the insulator layer can increase a breakdown electric field of the device, and the conductive or nonlinear conductive particles disposed in the insulator layer can reduce a maximum electric field of the device. Increasing the breakdown electric field of the device and/or reducing the maximum electric field of the device can increase the lifespan of a micro-scale passive device, and/or may allow the device to operate at a higher threshold electric field without breakdown of the device.

Abstract: A fully symmetrical and balanced monolithic or multi-die integrated circuit transformer device is described. The device can comprise a first and second transformer. The first and second transformer can each comprise a symmetrical bottom coil including electrically conductive crossovers between individual windings of pairs of adjacent windings. Each of the bottom coils can further comprise a first, a second differential terminal, and a center tap third terminal electrically connected to the inner-most winding of the bottom coil. Each transformer can further comprise a spiral top coil electrically connected to an encompassed inner pad and a laterally offset outer pad, the top coil, inner pad, and outer pad including a shared electrically conductive integrated circuit layer. The respective top coils of each transformer can be overlaid and separated from the respective bottom coils by an electrically insulating dielectric layer.

Abstract: The disclosed technology generally relates to lithographically defined conductive lines for integrated circuit devices formed by plating, and more particularly to conductive lines shaped to reduce the magnitude of electric field in the electric field distributions around conductive lines of integrated and monolithic transformers and isolators.

Abstract: Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high bandwidth, high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within such range. The isolators may include isolator components galvanically isolated from and capacitively coupled to each other. The sizes and shapes of the isolator components may be configured to control the values of equivalent inductances and capacitances of the isolators to facilitate resonance in operation. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high bandwidth, high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 30 GHz, not less than 60 GHz, or between 20 GHz and 200 GHz, including any value or range of values within such range. The isolators may include isolator components galvanically isolated from and capacitively coupled to each other. The sizes and shapes of the isolator components may be configured to control the values of equivalent inductances and capacitances of the isolators to facilitate resonance in operation. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: An embodiment of a communication circuit for communicating data across an isolation barrier may include an input circuit to receive a plurality of input data channels, a framing circuit to frame an input data packet from the plurality of input data channels, an encoding circuit to select a characteristic of a data symbol to represent a plurality of bits of the framed input data packet, and a driver circuit to drive one or more data symbols representing the framed input data packet onto an isolator configured to communicate data across the isolation barrier. The encoding circuit may select an amplitude, frequency or phase of the data symbol from a plurality of predetermined amplitudes, frequencies or phases, to encode the plurality of bits as the selected amplitude, frequency or phase.

Abstract: Isolators and methods for operating the same are described for opto-isolators with improved common mode transient immunity (CMTI). In some embodiments, a pair of photodetectors are provided in the opto-isolator and configured to generate photocurrents of opposite signs or directions in response to a light signal. Photocurrents from the pair of photodetectors are combined in a differential manner to represent data transmitted in a light signal, while common mode transient noise at the two photodetectors is attenuated or eliminated.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: Micro-scale devices, such as transformers and capacitors, having a floating conductive layer are disclosed. A floating conductive layer may be disposed in an insulator layer and can reduce a maximum electric field between a first planar conductor and a second planar conductor of a micro-scale passive device. Reduction of a maximum electric field between a first planar conductor and a second planar conductor can reduce undesirable effects on electrical components.

Abstract: A heat transfer element is disclosed. The heat transfer element can be configured to directly bond to a metal surface of an element. The heat transfer element can include a chamber that is defined at least in part by a housing that has a metal portion. The heat transfer element can also include a phase change material disposed in the chamber. The phase change material can be in thermal communication with the metal portion. The Heat transfer element can be bonded to the element to define a bonded structure.

Abstract: Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single, monolithic substrate are connected in series to achieve a higher amount of electrical isolation for a single substrate than for isolators formed on separate substrates connected in series. Discrete dielectric regions positioned between isolator components forming an isolator provide electrical isolation between the isolator components as well as between the isolators formed on the substrate. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.

Abstract: Power isolators with multiple selectable feedback modes are described. The power isolators may transfer a power signal from a primary side to a second side. A feedback signal may be provided from the secondary side to the primary side to control generation of the power signal on the primary side. In this manner, the power signal provided to the secondary side may be maintained within desired levels. The feedback signal may be generated by feedback circuitry configurable to operate in different modes, such that the feedback signal may be of differing types depending on which feedback mode is implemented.

Abstract: Isolators for high frequency signals transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may include resonators capable of operating at high frequencies with high transfer efficiency, high isolation rating, and a small substrate footprint. In some embodiments, the isolators may operate at a frequency not less than 20 GHz, not less than 30 GHz, not less than 65 GHz, or between 20 GHz and 100 GHz, including any value or range of values within such range. The isolators may include inductive loops with slits and capacitors integrally formed at the slits. The sizes and shapes of the inductive loops and capacitors may be configured to control the values of equivalent inductances and capacitances of the isolators. The isolators are compatible to different fabrication processes including, for example, micro-fabrication and PCB manufacture processes.

Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.

Abstract: Micro-scale planar-coil transformers including one or more shields are disclosed. The one or more shields can block most common-mode current from crossing from one side to another side of a transformer. Reduction of common-mode current crossing the transformer results in reduction of dipole radiation, which is the main component of electromagnetic interference (EMI) in some transformers.

Abstract: An integrated circuit fabricated with a number of layer may include a substrate, a transformer having a first winding, a second winding and a magnetic core. The first winding and the second winding may surround the magnetic core. The transformer may be disposed above a first side of the substrate. A flux conductor may be disposed on a second surface of the substrate opposite to the first surface.