Patents by Inventor Barry A. Hoberman

Barry A. Hoberman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High speed first-in-first-out memory
    Patent number: 4642797
    Abstract: A high speed M-stack fall-through FIFO memory system is disclosed which reduces fall-through delay and which permits at least a doubling of the maximum shift rates at input and output ports. Input port data may be entered in one of M physical memory locations and output port data may be read from one of M physical memory locations.
    Type: Grant
    Filed: November 10, 1983
    Date of Patent: February 10, 1987
    Assignee: Monolithic Memories, Inc.
    Inventor: Barry A. Hoberman
  • Memory cell and array
    Patent number: 4574367
    Abstract: A fall-through memory array comprising in a plurality of rows and columns a plurality of memory cells, each memory cell comprising a pair of cross-coupled transistors having three emitters, a collector and a base. Control potentials applied to a word line, coupled to each one of two of the emitters of each of the transistors, control the transfer of data bits from one row of such memory cells to another.
    Type: Grant
    Filed: November 10, 1983
    Date of Patent: March 4, 1986
    Assignee: Monolithic Memories, Inc.
    Inventors: Barry A. Hoberman, William E. Moss