Abstract: A video residual decoding apparatus is used for applying residual decoding to a transform block that is divided into sub-blocks, and includes a residual decoding circuit and a storage device. The residual decoding circuit enters a coefficient loop for decoding one or more syntax elements at each of coefficient positions within a sub-block that has at least one non-zero coefficient level. The coefficient loop includes one decoding pass and at least one other decoding pass. During the at least one other decoding pass, the residual decoding circuit records side information in the storage device, where the side information is indicative of specific coefficient positions at which specific syntax elements need to be decoded in the one decoding pass. During the one decoding pass, the residual decoding circuit refers to the side information for decoding the specific syntax elements at the specific coefficient positions, respectively.

Abstract: A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, a high work function layer, a top electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the high work function layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming said RRAM device is also provided.

Abstract: A system of collaboratively processing occurrences of events is configured to perform the following operations: transmits information of the occurrence to Asteroid_Clump_on_Duty (ACOD) and some clumps; perform a format verification, a Tally_sufficiency verification, a validation on the occurrence; each clump that performs the validation successfully claims and notifies the ACOD, Asteroid_Clump_of_Backup (ACB), and all clumps on a transmission path; performs a check on the validation; writes the occurrence data to a Satellite_Globule_Cluster (SGC) globule data structure in response to checking that the number of the passing count based on the types of clump is greater than a required threshold, wherein the SGC globule data gradually forms a Satellite_Globule_Cluster data structure. Some ACOD compete in a contest in order to write the occurrence data in Satellite_Globule_Cluster to Cardinal_Globule_Cluster(CGC).

Abstract: An integrated circuit layout includes a first standard cell and a second standard cell. The first standard cell includes first gate lines arranged along a first direction and extending along a second direction. The second standard cell abuts to one side of the first standard cell along the second direction and includes second gate lines arranged along the first direction and extending along the second direction. A first gate line width of the first gate lines and a second gate line width of the second gate lines are different. A first cell width of the first standard cell and a second cell width of the second standard cell are integral multiples of a default gate line pitch of the first gate lines and the second gate lines. At least some of the second gate lines and at least some of the first gate lines are aligned along the second direction.

Abstract: Provided is a resistive random-access memory device, including a dielectric layer located on a substrate, a first electrode which is a column located on the dielectric layer, a second electrode covering a top surface and a sidewall of the first electrode, and a variable resistance layer sandwiched between the top surface of the first electrode and the second electrode and between the sidewall of the first electrode and the second electrode and located between the second electrode and the dielectric layer.

Abstract: A flexible optical element adopting liquid crystals (LCs) as the materials for realizing electrically tunable optics is foldable. A method for manufacturing the flexible element includes patterned photo-polymerization. The LC optics can include a pair of LC layers with orthogonally aligned LC directors for polarizer-free properties, flexible polymeric alignment layers, flexible substrates, and a module for controlling the electric field. The lens power of the LC optics can be changed by controlling the distribution of electric field across the optical zone.

Abstract: A Deep Trench Isolation (DTI) structure is disclosed. A DTI structure formed in a semiconductor substrate. The DIT structure includes an isolation layer and filling material. The isolation layer is formed from a p-type semiconductor material. Sidewall portions of the isolation layer are in contact with the semiconductor substrate. A bottom portion of the isolation layer is in contact with a connection feature, which is connected to an interconnect structure and configured to apply a bias to the isolation layer of the DTI structure to achieve a controllable passivation in the semiconductor substrate.

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectric layer and the conductive via. The second conductive layer is patterned to form a sub 60 nm second conductive layer wherein the conductive via and second conductive layer together form a T-shaped second bottom electrode. MTJ stacks are deposited on the T-shaped second bottom electrode and on the first bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and planarized to expose a top surface of the MTJ stack on the T-shaped second bottom electrode. A top electrode contacts the MTJ stack on the T-shaped second bottom electrode plug.

Abstract: A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include air gaps formed in one or both sidewall spacers adjacent to the gate and/or above the source or drain regions of the device. The formation of the air gaps may reduce unwanted parasitic and/or fringing capacitance.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a first movable portion, a fixed portion, a first driving assembly, and a first guiding assembly. The first movable portion is used for connecting to a first optical element driving mechanism. The first optical element driving mechanism has a main axis that extends in a first direction. The first movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the first movable portion to move relative to the fixed portion. The first guiding assembly is used for guiding the movement of the fixed portion relative to the fixed portion.

Abstract: This disclosure provides for robust isolation across the SOI structure. In contrast to forming a charge trap layer in specific areas on the structure, a charge trap layer may be built across the insulating/substrate interface. The charge trap layer may be an implantation layer formed throughout and below the insulation layer. Devices built on this SOI structure have reduced cross-talk between the devices. Due to the uniform structure, isolation is robust across the structure and not confined to certain areas. Additionally, deep trench implantation is not required to form the structure, eliminating cost. The semiconductor-on-insulator substrate may include an active silicon layer over an oxide layer. The oxide layer may be over a charge trap layer. The charge trap layer may be over a silicon substrate.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: An optical element drive mechanism is provided. The optical element drive mechanism includes an immovable part, a first movable part, a first drive assembly, and a guidance assembly. The first movable part is movable relative to the immovable part. The first movable part is connected to a first optical element. The first drive assembly drives the first movable part to move relative to the immovable part. The guidance assembly guides the movement of the first movable part in the first dimension.

Abstract: A speaker module is adapted to be configured to a wearable device. The speaker module includes an enclosure and a driving unit. The driving unit is used to generate sound. The enclosure contains the driving unit. A sound sum of the sound output from a front opening, a first rear opening and a second rear opening of the enclosure has directivity. The connection vectors and the inverse vector of the connection normal vector defined by these openings are added to form a combined vector. A unit vector of the combination vector and a unit vector of a front normal vector facing outwards of the front opening are added to form a sum vector. The direction of the sum vector is the direction of the sound sum.

Abstract: A data storage system with intelligent power management includes a plurality of data storage devices and a controller. Each data storage device is capable of operating in one of (N+1) power saving functions where N is an integer larger than 1. The (N+1) power saving functions sequentially correspond to from the 0th to the Nth power saving levels. The controller reads a user-setting power saving level (I) where I is an integer index ranging from 0 to N. The controller reads a current power saving level (J) of a current power saving function of one of the plurality of data storage devices where J is an integer index ranging from 0 to N. The controller controls said one data storage device to operate in one power saving function among the (N+1) power saving functions according to the user-setting power saving level (I) and the current power saving level (J).

Abstract: A method for etching a magnetic tunneling junction (MTJ) structure is described. A MTJ stack is deposited on a bottom electrode wherein the MTJ stack comprises at least a pinned layer, a barrier layer on the pinned layer, and a free layer on the barrier layer, A top electrode layer is deposited on the MTJ stack. A hard mask is deposited on the top electrode layer. The top electrode layer and hard mask are etched. Thereafter, the MTJ stack not covered by the hard mask is etched, stopping at or within the pinned layer. Thereafter, an encapsulation layer is deposited over the partially etched MTJ stack and etched away on horizontal surfaces leaving a self-aligned hard mask on sidewalls of the partially etched MTJ stack. Finally, the remaining MTJ stack not covered by hard mask and self-aligned hard mask is etched to complete the MTJ structure.

Abstract: An ultra-large height top electrode for MRAM is achieved by employing a novel thin metal/thick dielectric/thick metal hybrid hard mask stack. Etching parameters are chosen to etch the dielectric quickly but to have an extremely low etch rate on the metals above and underneath. Because of the protection of the large thickness of the dielectric layer, the ultra-large height metal hard mask is etched with high integrity, eventually making a large height top electrode possible.