Patents by Inventor Beng S. Ong

Beng S. Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9184391
    Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: November 10, 2015
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Patent number: 9024298
    Abstract: An encapsulation, barrier, or protective layer for electronic devices is disclosed comprising a lac-based material, its synthetic form and variant, or a combination thereof, which protects electronic devices from adverse environmental effects.
    Type: Grant
    Filed: July 26, 2005
    Date of Patent: May 5, 2015
    Assignee: Xerox Corporation
    Inventors: Mihaela Maria Birau, Yiliang Wu, Beng S Ong
  • Publication number: 20140088313
    Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
    Type: Application
    Filed: December 5, 2013
    Publication date: March 27, 2014
    Applicant: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong, Yu Qi, Yuning Li
  • Patent number: 8673959
    Abstract: A polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Grant
    Filed: April 22, 2008
    Date of Patent: March 18, 2014
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S Ong, Yiliang Wu, Ping Liu
  • Patent number: 8609867
    Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: December 17, 2013
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong, Yu Qi, Yuning Li
  • Patent number: 8486304
    Abstract: A composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation, wherein the viscosity of the composition results from a process comprising (a) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (b) lowering the temperature of the composition from the elevated temperature to the first lower temperature; and (c) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature, wherein the amount of the polymer dissolved in the liquid at the elevated temperature ranges from about 0.2% to about 5% based on the total weight of the polymer and the liquid.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: July 16, 2013
    Inventors: Yiliang Wu, Ping Liu, Beng S. Ong, Dasarao K. Murti
  • Patent number: 8334391
    Abstract: A polymer of the formula/structure wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each R1 and R2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R3 and R4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR? wherein R? is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: December 18, 2012
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Yiliang Wu, Beng S. Ong, Ping Liu
  • Patent number: 8222073
    Abstract: A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: July 17, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Beng S Ong
  • Patent number: 8222076
    Abstract: A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid deposited one or more zinc oxide precursor compositions.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: July 17, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Yuning Li, Beng S. Ong
  • Publication number: 20120157689
    Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
    Type: Application
    Filed: February 6, 2012
    Publication date: June 21, 2012
    Applicant: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong, Yu Qi, Yuning Li
  • Patent number: 8153755
    Abstract: An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: April 10, 2012
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Hualong Pan, Yuning Li, Yiliang Wu, Ping Liu
  • Patent number: 8134144
    Abstract: There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: March 13, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Jessica Sacripante, Beng S. Ong, Paul Smith
  • Patent number: 8110690
    Abstract: A substituted indolocarbazole comprising at least one optionally substituted thienyl.
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: February 7, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S Ong, Yu Qi, Yuning Li
  • Patent number: 8089062
    Abstract: An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.
    Type: Grant
    Filed: March 23, 2005
    Date of Patent: January 3, 2012
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong, Ping Liu
  • Patent number: 8084765
    Abstract: An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical properties.
    Type: Grant
    Filed: May 7, 2007
    Date of Patent: December 27, 2011
    Assignee: Xerox Corporation
    Inventors: Yu Qi, Yiliang Wu, Yuning Li, Beng S. Ong
  • Patent number: 8067264
    Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: November 29, 2011
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
  • Patent number: 8049205
    Abstract: An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: November 1, 2011
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Yuning Li, Yiliang Wu
  • Patent number: 8039833
    Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: October 18, 2011
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
  • Patent number: 8003807
    Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: August 23, 2011
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Patent number: 7994495
    Abstract: An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: August 9, 2011
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong