Patents by Inventor Beng S. Ong

Beng S. Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ethynylene acene polymers and electronic devices generated therefrom
    Patent number: 7586120
    Abstract: An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: September 8, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu
  • Organic thin film transistors
    Patent number: 7573063
    Abstract: A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: August 11, 2009
    Assignee: Xerox Corporation
    Inventors: Ping Liu, Yiliang Wu, Yuning Li, Beng S. Ong
  • Semiconductors and electronic devices generated therefrom
    Patent number: 7563860
    Abstract: An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof wherein each R1 through R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: July 21, 2009
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Beng S. Ong
  • ORGANIC THIN FILM TRANSISTORS
    Publication number: 20090179194
    Abstract: An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
    Type: Application
    Filed: January 16, 2008
    Publication date: July 16, 2009
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Beng S. Ong
  • Heteroacene polymers and electronic devices generated therefrom
    Patent number: 7557370
    Abstract: An electronic device comprising a semiconductive material of Formula or structure (I) wherein each R1, R2, R3 and R4 are independently hydrogen (H), a heteroatom containing group, a suitable hydrocarbon, or a halogen; Ar and Ar? each independently represents an aromatic moiety; x, y, a, b, c, d, e, f and g represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR?? wherein R?? is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: July 7, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu
  • TFT fabrication process
    Patent number: 7553706
    Abstract: A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: June 30, 2009
    Assignee: Xerox Corporation
    Inventors: Ping Liu, Yiliang Wu, Beng S Ong
  • Polyacenes and electronic devices generated therefrom
    Patent number: 7550760
    Abstract: An electronic device comprises a semiconductive material containing a homopolyacene of Formula (I): wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R? and R? are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; a represents a number of benzene rings on a left side of the central benzene ring; b represents a number of benzene rings on a right side of the central benzene ring; x represents a total number of R? groups on the left side of the central benzene ring; y represents a total number of R? groups on the right side of the central benzene ring; and n represents the number of repeating units and is from 2 to about 5,000.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: June 23, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Ping Liu, Yiliang Wu, Beng S. Ong
  • THIN FILM TRANSISTOR
    Publication number: 20090127552
    Abstract: A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.
    Type: Application
    Filed: January 27, 2009
    Publication date: May 21, 2009
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Beng S. Ong
  • POLYMER HAVING THIENO[3,2-b] THIOPHENE MOIETIES
    Publication number: 20090124788
    Abstract: A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.
    Type: Application
    Filed: December 10, 2008
    Publication date: May 14, 2009
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Ping Liu, Yiliang Wu, Beng S. Ong
  • DEVICE CONTAINING POLYMER HAVING INDOLOCARBAZOLE- REPEAT UNIT AND DIVALENT LINKAGE
    Publication number: 20090114909
    Abstract: An electronic device comprising a polymer comprising at least one type of repeat unit comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Application
    Filed: December 15, 2008
    Publication date: May 7, 2009
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Small molecule compound having indolocarbazole moiety and divalent linkage
    Patent number: 7528261
    Abstract: A small molecule compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: May 5, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S Ong, Yiliang Wu, Ping Liu
  • ELECTRONIC DEVICE FABRICATION PROCESS
    Publication number: 20090110812
    Abstract: A process to fabricate an electronic device comprising: (a) liquid depositing a composition comprising a liquid, silver-containing nanoparticles, a replacement stabilizer comprising a carboxylic acid on the surface of the silver-containing nanoparticles, and a residual amount of an initial stabilizer on the surface of the silver-containing nanoparticles, resulting in a deposited composition; and (b) heating the deposited composition to form an electrically conductive layer comprising silver.
    Type: Application
    Filed: December 4, 2008
    Publication date: April 30, 2009
    Applicant: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong
  • Polydiazaacenes
    Patent number: 7517476
    Abstract: A polymer represented by Formula or structure (I) wherein at least one of each R, R1, R2, R3, R4, R5, and R6 is independently hydrogen, alkyl, aryl, arylalkyl, alkoxy, halogen, cyano, or nitro; x, y, a and b represent the number of groups and rings, respectively; and n represents the number of repeating groups or moieties.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: April 14, 2009
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Beng S. Ong
  • Polythiophenes and devices thereof
    Patent number: 7517945
    Abstract: Polythiophenes of the formula wherein R is a side chain; m is the number of substituents; A is a divalent linkage; x, y and z represent, respectively, the numbers of R substituted thienylene, unsubstituted thienylene, and divalent linkages A in the monomer segment with z being either 0 or 1; and n represents the number of the repeating monomer segments in the polymer chain or the degree of polymerization.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: April 14, 2009
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
  • Polydiazaacenes and electronic devices generated therefrom
    Patent number: 7517477
    Abstract: An electronic device, such as a thin film transistor, containing a polymer of the formula or structure wherein at least one of each R, R1, R2, R3, R4, R5 and R6 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro; x and y represent the number of R substituents; a and b represent the number of rings; and n represents the number of repeating groups or moieties.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: April 14, 2009
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Beng S. Ong
  • Thin film transistor
    Patent number: 7511343
    Abstract: A thin film transistor is disclosed comprising a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: March 31, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong
  • Stabilized silver nanoparticle composition
    Patent number: 7494608
    Abstract: A composition comprising a liquid and a plurality of silver-containing nanoparticles with a stabilizer, wherein the silver-containing nanoparticles are a product of a reaction of a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an organic solvent wherein the hydrazine compound is a hydrocarbyl hydrazine, a hydrocarbyl hydrazine salt, a hydrazide, a carbazate, a sulfonohydrazide, or a mixture thereof and wherein the stabilizer includes an organoamine.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: February 24, 2009
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Yiliang Wu, Beng S Ong
  • Electrically conductive feature fabrication process
    Patent number: 7491646
    Abstract: A process for fabricating an electrically conductive feature comprising: (a) liquid depositing a low viscosity composition comprising starting ingredients including an organic anine, a silver compound, and optionally an organic acid, to result in a deposited composition; and (b) heating the deposited composition, resulting in the electrically conductive feature comprising silver.
    Type: Grant
    Filed: July 20, 2006
    Date of Patent: February 17, 2009
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong
  • Fabricating zinc oxide semiconductor using hydrolysis
    Patent number: 7491575
    Abstract: A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide; (b) liquid depositing; and (c) optionally heating, wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: February 17, 2009
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Beng S. Ong
  • POLY[BIS(ETHYNYL)HETEROACENE]S AND ELECTRONIC DEVICES GENERATED THEREFROM
    Publication number: 20090039344
    Abstract: An electronic device comprising a polymer of Formula or Structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
    Type: Application
    Filed: October 17, 2008
    Publication date: February 12, 2009
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Ping Liu, Yiliang Wu, Beng S. Ong