Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A computer implemented method and system for identifying advertisements targeted to individuals based on analysis of audio recordings. The method includes recording audio input from at least one media transmission, analyzing the recorded media audio to identify content of the at least one media transmission, recording audio input from at least one individual, analyzing the recorded individual audio to classify the at least one individual into at least one segment, analyzing the recorded individual audio to identify at least one sentiment related to the identified media content, analyzing the at least one sentiment in context with the identified media content and identifying at least one advertisement targeted to the at least one segment based on the contextual analysis.

Abstract: Embodiments are directed to a support apparatus. The support apparatus might comprise a body configured to support an entity. The body might comprise a material that has a physical property. The support apparatus might further comprise a coupler system configured to couple electric current from a power source to the material. The material is arranged such that coupling an electric current to the material changes the physical property of the material. Embodiments are further directed to a method. The method might comprise forming one or more cavities in a support apparatus. The method might further comprise providing one or more couplers in electrical contact with each of the one or more channels. The method further comprises filling each of the one or more cavities with a fluid that has electrically changeable rigidity. Finally, the method might comprise connecting a power source to each of the one or more couplers.

Abstract: A method for forming a conductive structure for a semiconductor device includes depositing a barrier layer in a trench formed in a dielectric material and forming an interface layer over the barrier layer. A main conductor is formed over the interface layer, and the main conductor is recessed selectively to the interface layer and the barrier layer to a position below a top surface of the dielectric layer. The interface layer is selectively wet etched to the main conductor and the barrier layer using a chemical composition having an oxidizer, wherein the chemical composition is buffered to include a pH above 7. The barrier layer is selectively etching to the main conductor and the interface layer.

Abstract: Methods are provided for fabricating metallic interconnect structures having reduced electrical resistivity that is obtained by applying mechanical strain to the metallic interconnect structures, as well as semiconductor structures having metallic interconnect structures formed with permanent mechanical strain to provide reduced electrical resistivity. For example, a method includes forming a metallic interconnect structure in an interlevel dielectric (ILD) layer of a back-end-of-line (BEOL) structure of a semiconductor structure, and forming a stress layer in contact with the metallic interconnect structure. A thermal anneal process is performed to cause the stress layer to expand and apply compressive strain to the metallic interconnect structure and permanently deform at least a portion of the metallic interconnect structure into a stress memorized state of compressive strain.

Abstract: A method of forming a skip-via, including, forming a first dielectric layer on a first metallization layer, forming a second metallization layer on the first dielectric layer and a second dielectric layer on the second metallization layer, removing a section of the second dielectric layer to form a via to the second metallization layer, removing a portion of the second metallization layer to form an aperture, and removing an additional portion of the second metallization layer to form an exclusion zone.

Abstract: Techniques for preventing switching of spins in a magnetic tunnel junction by stray magnetic fields using a thin film magnetic shield are provided. In one aspect, a method of forming a magnetic tunnel junction includes: forming a stack on a substrate, having a first magnetic layer, a tunnel barrier, and a second magnetic layer; etching the stack to partially pattern the magnetic tunnel junction in the stack, wherein the etching includes patterning the magnetic tunnel junction through the second magnetic layer, the tunnel barrier, and partway through the first magnetic layer; depositing a first spacer and a magnetic shield film onto the partially patterned magnetic tunnel junction; etching back the magnetic shield film and first spacer; complete etching of the magnetic tunnel junction through the first magnetic layer to form a fully patterned magnetic tunnel junction; and depositing a second spacer onto the fully patterned magnetic tunnel junction.

Abstract: A multi-level semiconductor device and a method of fabricating a multi-level semiconductor device involve a first interlayer dielectric (ILD) layer with one or more metal lines formed therein. A silicide is formed on a surface of the first ILD layer and is directly adjacent to each of the one or more metal lines on both sides of each of the one or more metal lines. A second ILD is formed above the silicide, and a via is formed through the second ILD above one of the one or more metal lines. One or more second metal lines are formed above the second ILD, one of which is formed in the via. The second metal line in the via contacts the one of the one or more metal lines and the silicide adjacent to the one of the one or more metal lines.

Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises etching a pattern of lines that contain notches that are narrower than other parts of the line. Thereafter, vias are created where the notches are located. The locations of the vias are such that the effect of blown-out areas is minimized. Thereafter, the lines are etched and the vias and line areas are filled. The layers are planarized such that the metal fill is level with a surrounding ultra-low-k dielectric. Additional metal layers, lines, and vias can be created. Other embodiments are also described herein.

Abstract: Embodiments of the invention are directed to computer-implemented methods, computer systems, and computer program products for customizing a virtual reality avatar. The method includes receiving inputs from an electromyography sensor. The inputs from the electromyography sensor include inputs derived from the activity or inactivity of facial muscles. In some embodiments, the electromyography sensor is integrated into a head mounted display to be in contact with a user's facial muscles. The inputs from the electromyography sensor are translated into data that represents sensed facial expressions. The facial features of the user's virtual reality avatar are modified based at least in part on the data that represents sensed facial expressions.

Abstract: A method is presented for forming a semiconductor structure. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form trenches for receiving a metal, depositing one or more sacrificial layers, and etching portions of the one or more sacrificial layers to expose a top surface of the metal of one or more of the trenches. The method further includes selectively depositing an electrode over the top surface of the exposed metal and nitridizing the electrode to form a diffusion barrier between chip components and the metal.

Abstract: A method is presented for forming a semiconductor structure. The method includes depositing an insulating layer over a semiconductor substrate, etching the insulating layer to form trenches for receiving a metal, depositing one or more sacrificial layers, and etching portions of the one or more sacrificial layers to expose a top surface of the metal of one or more of the trenches. The method further includes selectively depositing an electrode over the top surface of the exposed metal and nitridizing the electrode to form a diffusion barrier between chip components and the metal.

Abstract: A semiconductor structure and methods of forming the semiconductor structure forming a single damascene line formed of a conductive material in a dielectric layer. The single damascene line is at a thickness equal to a line height and a via height. The single damascene line is subtractively cut and patterned to form a first line including a via at a first line end and a second line including a via at a second line end. The tip-to-tip spacing is minimal and defines via pitch. A conformal conductive metal cap layer including cobalt is deposited onto the first and second lines including the respective vias at the first and second line ends.

Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.

Abstract: A multi-level semiconductor device and a method of fabricating a multi-level semiconductor device involve a first interlayer dielectric (ILD) layer with one or more metal lines formed therein. A silicide is formed on a surface of the first ILD layer and is directly adjacent to each of the one or more metal lines on both sides of each of the one or more metal lines. A second ILD is formed above the silicide, and a via is formed through the second ILD above one of the one or more metal lines. One or more second metal lines are formed above the second ILD, one of which is formed in the via. The second metal line in the via contacts the one of the one or more metal lines and the silicide adjacent to the one of the one or more metal lines.

Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.

Abstract: Techniques for modifying user behavior and screening for impairment using a mobile feedback controller, such as a smartwatch, are provided. In one aspect, a method for monitoring a user includes the steps of: collecting real-time data from the user, wherein the data is collected via a mobile feedback controller worn by the user; determining whether the data collected from the user indicates impairment; determining appropriate corrective actions to be taken if the data collected from the user indicates impairment, otherwise continuing to collect data from the user in real-time; determining whether any action is needed; and undertaking the appropriate corrective actions if action is needed, otherwise continuing to collect data from the user in real-time.

Abstract: A system and method perform remote physical training. The method includes receiving movements performed by an operator who is remotely located, and presenting the movements of the operator as movements performed by an avatar representing the operator in a virtual reality environment. The method also includes remotely monitoring the movements of the avatar, and providing real-time feedback on the movements to the operator.

Abstract: A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.