Abstract: Disclosed is a substrate manufacturing method for realizing three-dimensional packaging, which includes: preparing a base plate, the base plate including a dielectric material layer, a first sidewall pad, a first through-hole pillar and a cavity, the cavity being filled with a first metal block; processing a first circuit layer and a second circuit layer, the first circuit layer including a first padding plate and a second metal block, and the second circuit layer including a second padding plate and a plurality of pin pads; processing and laminating interlayer through-hole pillars; processing a third circuit layer and a fourth circuit layer, the third circuit layer including a second sidewall pad and the fourth circuit layer including a routing circuit; and etching to expose the first sidewall pad, the second sidewall pad and the pin pads.

Abstract: A packaged cavity structure includes an embedded packaging frame having a first cavity and a first conductive post respectively penetrating an insulation layer in a height direction, a chipset within the first cavity, a first circuit layer on an upper surface of the embedded packaging frame, a first dielectric layer on the first circuit layer, a second circuit layer on the first dielectric layer, a through-hole penetrating the first dielectric layer and the insulation layer, a third circuit layer on a lower surface of the embedded packaging frame, a support post enclosure on the third circuit layer, and a packaging layer formed along the outside of the support post enclosure. A second cavity communicating with the through-hole is formed between the packaging layer and the lower surface of the embedded packaging frame, and the chipset includes a first chip and a second chip provided in a back-to-back stack.

Abstract: A semiconductor package structure and a manufacturing method therefor are disclosed. The semiconductor package structure includes a package layer, a first device layer, a first insulation layer, a conductive copper pillar, and a second device layer. The package layer covers the first device layer. The first device layer, the first insulation layer, and the second device layer are sequentially stacked. The conductive copper pillar extends through the first insulation layer. The first device layer and the second device layer are electrically connected through the conductive copper pillar. The first device layer includes a first circuit layer, a trench, and an embedded device. The embedded device is connected to the first circuit layer. The trench is arranged below the embedded device. The trench is partially or completely overlapped with a projection of the embedded device in a mounting direction of the embedded device.

Abstract: Disclosed is a manufacturing method for an embedded structure. The method includes: preparing a temporary carrier board; preparing a second circuit layer on at least one of the upper surface and the lower surface of the temporary carrier board, and preparing a first dielectric layer to cover the second circuit layer; patterning and curing the first dielectric layer to form a cavity, mounting a device in the cavity, and performing hot-curing, wherein a surface of the device provided with a terminal faces an opening of the cavity; and preparing a second dielectric layer, wherein the device is embedded in the second dielectric layer, and a surface of the second dielectric layer is higher than a surface of the terminal by a preset value.

Abstract: A chip high-density interconnection package structure includes a plate having a groove and a glass frame, a first via post penetrating the glass frame, a second via post penetrating the groove, a first line layer and a second line layer on the glass frame and electrically connected via the first via post, a third line layer and a fourth line layer on the groove and electrically connected via the second via post, a chip connection bridge on the third line layer in the groove, and a fifth line layer on the first line layer, and chips on the second line layer and the fourth line layer. The chip connection bridge has a first pad connected to the third line layer, the terminals of the two chips are connected to the fourth line layer and/or the second line layer, and the fifth line layer is connected to the first line layer.

Abstract: Disclosed is an embedded chip package, comprising at least one chip and a frame surrounding the at least one chip, the chip having a terminal face and a back face separated by a height of the chip, the frame having a height equal to or larger than the height of the chip, wherein the gap between the chip and the frame is fully filled with a photosensitive polymer dielectric, the terminal face of the chip being coplanar with the frame, a first wiring layer being formed on the terminal face of the chip and a second wiring layer being formed on the back face of the chip. Moreover, a method for manufacturing an embedded chip package is disclosed.

Abstract: A method for manufacturing a high-heat-dissipation mixed substrate includes: preparing a mother substrate, the mother substrate including an insulating layer and a temporary carrier plate which are laminated; arranging a plurality of first grooves and a plurality of first cavities on the mother substrate; filling the first groove with a thermally-conductive material to form a first thermally-conductive block, and adhering an embedded device in the first cavity and filling the first cavity with the thermally-conductive material to form a second thermally-conductive block; removing the temporary carrier plate to obtain a semi-finished substrate; manufacturing circuit layers on two opposite side surfaces of the semi-finished substrate to obtain a target mother substrate; and cutting the target mother substrate along region dividing lines to obtain a mixed substrate with a side surface being a thermally-conductive surface.

Abstract: A manufacturing method for an embedded flip chip package substrate includes laminating a first dielectric layer on the first line layer formed on a carrier plate, forming a first window on the first dielectric layer, filling a first copper post in the first window, forming a second window on the first dielectric layer, mounting a flip chip to the second window, sequentially stacking a packaging layer and a second dielectric layer covered with a first metal layer on the first dielectric layer, pressing a packaging layer encapsulating the first copper post and the flip chip and a second dielectric layer, curing the packaging layer, opening a hole through the first metal layer, the second dielectric layer and the packaging layer to form an interlayer conducting blind hole, forming a second line layer on the first metal layer, and removing the carrier plate to obtain a package substrate.

Abstract: A method for manufacturing a device embedded packaging structure include laminating a first dielectric material on a copper foil to form a first dielectric layer, and forming a first feature pattern in the first dielectric layer to expose the copper foil, etching the exposed copper foil to form a device opening frame and a via post opening frame to obtain a metal frame, applying an adhesive layer on the metal frame, and mounting a device to the adhesive layer in the device opening frame, laminating a second dielectric material to form a second dielectric layer covering the metal frame and filling the device opening frame and the via post opening frame, forming a via post in the via post opening frame, and forming a first wiring layer and a second wiring layer conductively connected by the via post on the upper and lower surfaces of the second dielectric layer.

Abstract: A method for manufacturing a structure for embedding and packaging multiple devices by layer includes preparing a polymer supporting frame, mounting a first device in a first device placement mouth frame to form a first packaging layer, forming a first circuit layer and a second circuit layer, forming a second conductive copper pillar layer and a second sacrificial copper pillar layer, forming a second insulating layer on the first circuit layer, and forming a third insulating layer on the second circuit layer, forming a second device placement mouth frame vertically overlapped with the first device placement mouth frame, mounting a second device and a third device in the second device placement mouth frame to form a second packaging layer, forming a third circuit layer on the second insulating layer. A terminal of the second device and a terminal of the third device are respectively communicated with the third circuit layer.

Abstract: A package substrate with an embedded device and a manufacturing method therefor are disclosed. The method includes: manufacturing a third circuit layer and a target on a temporary carrier plate, and laminating a third dielectric layer; placing a device to be embedded on the third dielectric layer which is then covered with a second dielectric layer; laminating a second copper foil and manufacturing a second circuit layer, a second copper pillar, and a third copper pillar; laminating a first dielectric layer and a first copper foil sequentially, and removing the temporary carrier plate; laminating a fourth dielectric layer on the third circuit layer; laminating a fourth copper foil on the fourth dielectric layer; and manufacturing a fourth circuit layer and a fourth copper pillar through the fourth copper foil, and manufacturing a first circuit layer and a first copper pillar through the first copper foil.

Abstract: A multichip interconnecting packaging structure includes a glass frame, a first line layer and a second line layer respectively provided on the first surface and the second surface of the glass frame, a first via post penetrating through the glass frame, a cavity penetrating through the glass frame, a chip connecting device embedded in the cavity, a first insulating layer filling the cavity to cover the chip connecting device, and a first chip and a second chip provided on the surface of the first line layer, wherein a terminal of the chip connecting device is connected to the first line layer, the first line layer and the second line layer are in conductive communication through the first via post, the first chip and the second chip are connected to the chip connecting device through the first line layer to interconnect the first chip with the second chip.

Abstract: A packaging structure for realizing chip interconnection includes a core layer, a bridging layer, a first dielectric layer, a second dielectric layer, a first bonding pad layer and a second bonding pad layer. The first dielectric layer is arranged between the core layer and the first bonding pad layer, the second dielectric layer is arranged between the second bonding pad layer and the core layer. The first bonding pad layer is connected with the core layer through a first via, the second bonding pad layer is connected with the core layer through a second via. The bridging layer is embedded in the first dielectric layer. The bridging layer is electrically insulated from the core layer, and the bridging layer is connected with the first bonding pad layer through a third via.

Abstract: A method for manufacturing a light-emitting photosensitive sensor structure includes preparing a package substrate, wherein the package substrate has a cavity formed by a light-shield frame performing enclosing, and the bottom of the cavity is provided with a first line layer, forming a light transmission channel on the light-shield frame, mounting a light-emitting photosensitive sensor in the cavity of the package substrate so that the photosensitive luminescent device is electrically connected to the first line layer, filling the cavity and the light transmission channel with a transparent encapsulating material to form a transparent packaging layer on the photosensitive luminescent device, forming a light-shield layer on the transparent packaging layer, and performing cutting along a cutting line of the light-shield frame to obtain a light-emitting photosensitive sensor structure having a directional light transmission channel.

Abstract: An embedded chip package according to an embodiment of the present application may include at least one chip and a frame surrounding the at least one chip, the chip having a terminal face and a back face separated by a height of the chip, the frame having a height equal to or larger than the height of the chip, wherein the gap between the chip and the frame is fully filled with a photosensitive polymer dielectric, the terminal face of the chip being coplanar with the frame, a first wiring layer being formed on the terminal face of the chip and a second wiring layer being formed on the back face of the chip.

Abstract: A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.

Abstract: A liquid circulating cooling package substrate includes a circulating cooling structure including a cooling chamber in a first dielectric layer to expose a heat dissipation face, a metal heat dissipation layer on the inner surface of the cooling chamber, an upright support column formed on a metal heat dissipation layer, and a cooling cover supported on the support column to close the cooling chamber along the periphery of the cooling chamber. The metal heat dissipation layer completely covers the heat dissipation face and the inner side surface of the cooling chamber, and a liquid inlet and a liquid outlet are formed on the cooling cover. A circulating cooling structure is provided in the first dielectric layer, and the circulating cooling structure is formed during the processing of an embedded package substrate such that the processing flow is simple and the cost is low.

Abstract: A manufacturing method for a substrate embedded with integrated inductor includes: providing a bearing plate; manufacturing a first conduction copper column on the bearing plate; arranging a first dielectric layer on the bearing plate which covers the first conduction copper column; opening the first dielectric layer to form a first opening; filling a magnetic material at the first opening; grinding the first dielectric layer so that surfaces of the first conduction copper column and the magnetic material are flush with a surface of the first dielectric layer; removing the bearing plate, etching a metal layer on the surface of the first dielectric layer to form a package substrate; arranging a first circuit layer and a solder mask layer on an upper surface and a lower surface of the package substrate; and forming a window in the solder mask layer corresponding to the first circuit layer.

Abstract: A package substrate manufacturing method includes: providing a bearing plate, manufacturing a pattern and depositing metal to form the first circuit layer; manufacturing a pattern on the first circuit layer, depositing and etching metal to form a metal cavity, laminating a dielectric layer on the metal cavity, and performing thinning to expose the metal cavity; removing the bearing plate, etching the metal cavity to expose the cavity, depositing metal on the cavity and the dielectric layer, and performing pattern manufacturing and etching to form a second circuit layer; forming a first and second solder mask layers correspondingly on the first and second circuit layers, and performing pattern manufacturing on the first solder mask layer or the second solder mask layer to form a bonding pad; and cutting the cavity, the first circuit layer, the second circuit layer, the first solder mask layer and the second solder mask layer.

Abstract: A manufacturing method for a conductive substrate with a filtering function includes preparing a core layer and forming first and second conductive holes in the core layer, forming a sacrificial copper layer on the first conductive hole and on the core layer, forming a metal layer on the second conductive hole, forming a metal post in the first conductive hole, forming a lower insulating layer on the core layer, forming a lower insulative post in the second conductive hole, forming a magnet wrapping around the metal post to obtain a first conductive post, forming an upper insulating layer on the core layer, forming an upper insulative post in the second conductive hole to obtain a second conductive post, removing the upper insulating layer, the lower insulating layer, and the remaining sacrificial copper post layer, followed by flattening.