Abstract: A package substrate manufacturing method includes: providing a bearing plate, manufacturing a pattern and depositing metal to form the first circuit layer; manufacturing a pattern on the first circuit layer, depositing and etching metal to form a metal cavity, laminating a dielectric layer on the metal cavity, and performing thinning to expose the metal cavity; removing the bearing plate, etching the metal cavity to expose the cavity, depositing metal on the cavity and the dielectric layer, and performing pattern manufacturing and etching to form a second circuit layer; forming a first and second solder mask layers correspondingly on the first and second circuit layers, and performing pattern manufacturing on the first solder mask layer or the second solder mask layer to form a bonding pad; and cutting the cavity, the first circuit layer, the second circuit layer, the first solder mask layer and the second solder mask layer.

Abstract: A manufacturing method for a conductive substrate with a filtering function includes preparing a core layer and forming first and second conductive holes in the core layer, forming a sacrificial copper layer on the first conductive hole and on the core layer, forming a metal layer on the second conductive hole, forming a metal post in the first conductive hole, forming a lower insulating layer on the core layer, forming a lower insulative post in the second conductive hole, forming a magnet wrapping around the metal post to obtain a first conductive post, forming an upper insulating layer on the core layer, forming an upper insulative post in the second conductive hole to obtain a second conductive post, removing the upper insulating layer, the lower insulating layer, and the remaining sacrificial copper post layer, followed by flattening.

Abstract: A package substrate includes: a glass frame having a through hole and a chip embedding cavity; an electronic component arranged in the chip embedding cavity; a dielectric layer filled on an upper surface of the glass frame and in the chip embedding cavity; a metal pillar passing through the through hole; a circuit layer arranged on the upper surface and/or a lower surface of the glass frame and connected to the electronic component and the metal pillar; and a solder mask arranged on a surface of the circuit layer and having a pad which is connected to the circuit layer.

Abstract: A packaging structure includes multiple packaging units, and the packaging units include a hard plate region, a winding region, and a fan-out region. In the packaging structure, the hard plate region of the packaging unit is arranged in a stacked manner, some or all of the fan-out regions are packaged with a chip, and some or all of the fan-out regions packaged with a chip are stacked with the hard plate regions after being bent by the winding region. So designed, each fan-out region is individually packaged and then packaged by stacking with each other to achieve the interconnections between a chip and a chip, and between a chip and a substrate without interference between the packaging units.

Abstract: A carrier plate for preparing a package substrate according to an embodiment includes a dielectric layer, a seed layer in the dielectric layer, and a copper pillar layer on the seed layer. A bottom end of the seed layer is higher than a lower surface of the dielectric layer. A top end of the copper pillar layer is lower than an upper surface of the dielectric layer. The upper and lower surfaces of the dielectric layer are respectively provided with a first metal layer and a second metal layer.

Abstract: In a method of manufacturing a connector, a first copper pillar layer and a sacrificial copper pillar layer are formed on a temporary bearing plate coated with copper, an etch stop layer is applied on the sacrificial copper pillar layer and electroplated to form a second copper pillar layer, insulating materials is laminated to form a first dielectric layer, a first circuit layer is formed on the first dielectric layer, a second copper pillar layer and a sacrificial copper pillar layer are extended on the first circuit layer, and a sacrificial copper layer is formed on the first circuit layer, insulating material is laminated on the first circuit layer to form a second dielectric layer, the temporary bearing plate is removed, a second and third circuit layers are simultaneously formed on the first and second dielectric layers, and the sacrificial copper layer and the sacrificial copper pillar layer are etched.

Abstract: A package substrate and a manufacturing method thereof are disclosed. The method includes: providing an inner substrate; processing an adhesive photosensitive material on a surface of a first side of the inner substrate to obtain an adhesive first insulating dielectric layer; mounting a component on the first insulating dielectric layer; and processing a photosensitive packaging material on the first side of the inner substrate to obtain a second insulating dielectric layer, where the second insulating dielectric layer covers the component.

Abstract: A method for manufacturing a packaging substrate, and a packaging substrate are disclosed. The method includes: providing a bottom board with a first circuit layer, the first circuit layer being provided with at least one demand point, and one side of the demand point being provided with a first to-be-avoided region; machining a first intermediate insulating layer on the bottom board, the first intermediate insulating layer including a first intermediate insulating dielectric covering the first to-be-avoided region; machining a first intermediate wiring layer on the first intermediate insulating layer, the first intermediate wiring layer including a first intermediate circuit partially arranged on the first intermediate insulating dielectric and connected to the demand point; machining a first insulating layer on the first intermediate wiring layer which is stacked on the bottom board and covers the first intermediate wiring layer; and machining a circuit build-up layer on the first insulating layer.

Abstract: A multilayer substrate and a manufacturing method thereof are disclosed. The multilayer substrate includes two or more dielectric layers laminated in sequence; a public line disposed at a top or bottom dielectric layer of the two or more dielectric layers; and two or more first through hole pillars respectively each embedded in a respective one of the dielectric layers, and the first through hole pillars are connected in cascade and then connected with the public line.

Abstract: A capacitor and inductor embedded structure and a manufacturing method therefor, and a substrate are disclosed. The method includes: providing a metal plate; sequentially depositing and etching a first protective layer, a thin film dielectric layer, a second protective layer, and an upper electrode layer on an upper surface of the metal plate to form a thin film capacitor and a capacitor upper electrode; pressing an upper dielectric layer to the upper surface of the metal plate, covering the thin film capacitor and the capacitor upper electrode, and etching the metal plate to form a capacitor lower electrode; pressing a lower dielectric layer to a lower surface of the metal plate, and performing drilling on the upper dielectric layer and the lower dielectric layer to form inductor through holes and capacitor electrode through holes; electroplating metal to form an inductor and circuit layers.

Abstract: A connector for implementing multi-faceted interconnection according to an embodiment of the present disclosure includes a first dielectric layer between a first circuit layer and a second circuit layer, a first copper pillar layer connecting the first circuit layer and the second circuit layer in the first dielectric layer, a second dielectric layer on the first circuit layer, a third circuit layer on the second dielectric layer, and a vertical second copper pillar layer connected to the third circuit layer, wherein an opening is formed in the second dielectric layer to expose the first circuit layer, and the second copper pillar layer exposes side faces facing side end faces of the first dielectric layer and the second dielectric layer.

Abstract: A method for manufacturing a structure for embedding and packaging multiple devices by layer includes preparing a polymer supporting frame, mounting a first device in a first device placement mouth frame to form a first packaging layer, forming a first circuit layer and a second circuit layer, forming a second conductive copper pillar layer and a second sacrificial copper pillar layer, forming a second insulating layer on the first circuit layer, and forming a third insulating layer on the second circuit layer, forming a second device placement mouth frame vertically overlapped with the first device placement mouth frame, mounting a second device and a third device in the second device placement mouth frame to form a second packaging layer, forming a third circuit layer on the second insulating layer. A terminal of the second device and a terminal of the third device are respectively communicated with the third circuit layer.

Abstract: An embedded inductance structure includes an insulating layer, an inductance located in the insulating layer, a multi-layer conducting circuit located in the insulating layer and on the upper surface and lower surface of the insulating layer, and a multi-layer conductive copper column layer located in the insulating layer. The inductance and the multi-layer conducting circuit are conductively connected via the multi-layer conductive copper column layer, and the inductance includes a magnet and an inductance coil in direct contact with the magnet, and the inductance coil is composed of a multi-layer conductive coil and a conductive copper column located between adjacent conductive coils. The multi-layer conductive coils are respectively in a ring shape with a notch and are disconnected at the notch, and the positions of the conductive copper columns located on the upper side and lower of each conductive coil are different in the longitudinal direction.

Abstract: A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.

Abstract: A two-sided interconnected embedded chip packaging structure includes a first insulating layer and a second insulating layer. The first insulating layer includes a first conductive copper column layer penetrating through the first insulating layer in a height direction and a first chip located between adjacent first conductive copper columns, and the first chip is attached to the inside of the lower surface of the first insulating layer. The second insulating layer includes a first conductive wire layer and a heat radiation copper surface which are located in the upper surface of the second insulating layer, the first conductive wire layer is provided with a second conductive copper column layer, the first conductive copper column layer is connected with the first conductive wire layer, and the heat radiation copper surface is connected with the reverse side of the first chip.

Abstract: Disclosed are a method for manufacturing a support frame structure and a support frame structure.

Abstract: An embedded chip package according to an embodiment of the present application may include at least one chip and a frame surrounding the at least one chip, the chip having a terminal face and a back face separated by a height of the chip, the frame having a height equal to or larger than the height of the chip, wherein the gap between the chip and the frame is fully filled with a photosensitive polymer dielectric, the terminal face of the chip being coplanar with the frame, a first wiring layer being formed on the terminal face of the chip and a second wiring layer being formed on the back face of the chip.

Abstract: An embedded packaging structure and a manufacturing method thereof are disclosed. The method includes: providing a bearing plate with a first metal seed layer; processing on the first metal seed layer to obtain a substrate; removing the bearing plate to obtain the substrate, and processing on the substrate to obtain a first and a second cavities penetrating therethrough; assembling a first component in the first cavity, assembling a connecting flexible board in the second cavity, processing on a second side of the substrate to obtain a second insulating layer; processing on a first side of the substrate to obtain a second circuit layer, assembling a second component on the second circuit layer; bending the substrate through the connecting flexible board to form an included angle less than 180 degrees on the first side, and packaging the first side by using a packaging material to obtain a packaging layer.

Abstract: A signal-heat separated TMV packaging structure includes an insulating dielectric material, an inner signal line layer arranged in the insulating dielectric material, an outer signal line layer, a heat dissipation metal face and a chip. A first side of the insulating dielectric material is provided with an isolating layer. The outer signal line layer is arranged on a surface of a second side of the insulating dielectric material and is connected with the inner signal line layer through a TMV structure. The heat dissipation metal face is arranged on a surface of the first side of the insulating dielectric material, and is separated from the inner signal line layer. The chip is embedded in the insulating dielectric material, with an active face in electrically-conductive connection with the inner signal line layer and a passive face in heat transfer connection with the heat dissipation metal face.

Abstract: A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.