Abstract: A light-emitting diode (LED) device can include a mesa with a sidewall encompassing a first semiconductor layer, a second semiconductor layer, and an active region between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are oppositely doped. The active region includes a quantum well. The LED device can further include at least one epitaxial layer grown over the sidewall of the mesa. The at least one epitaxial layer comprises a semiconductor material having a wider bandgap than a semiconductor material of the quantum well and is configured to induce compressive or tensile strain in the quantum well. The compressive or tensile strain causes a bandgap of a peripheral portion of the quantum well to differ from a bandgap of a central portion of the quantum well, thereby tuning an emission profile (e.g., wavelength and/or intensity) of the LED device.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

Abstract: A radiation-emitting semiconductor chip may include a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, a first metallic mirror with which charge carriers can be embedded into the first semiconductor layer, a first metallic contact layer disposed atop the first metallic mirror, and a second metallic contact layer disposed atop the first metallic contact layer. A first seed layer may be disposed between the first metallic contact layer and the first metallic mirror. A second seed layer may be disposed between the first metallic contact layer and the second metallic contact layer. The radiation-emitting semiconductor chip may include a radiation exit face having a multitude of emission regions. The first metallic mirror may have a multitude of cutouts that each define a lateral extent of one of the emission regions.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A lateral micro-light emitting diode includes a first semiconductor layer, an active region on the first semiconductor layer and including one or more quantum well layers configured to emit light, a p-type semiconductor region on a first lateral region (e.g., a central region) of the active region, and an n-type semiconductor region on a second lateral region (e.g., peripheral regions) of the active region, where the n-type semiconductor region and the p-type semiconductor region are on a same side of the active region.

Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.

Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic component comprising at least one semiconductor element having an active region adapted to generate light is proposed. the device comprises a dielectric filter disposed above a first major surface of the at least one semiconductor element and adapted to transmit light only in pre-planar directions, and a reflective material disposed on at least one side surface of the at least one semiconductor element and on at least one side surface of the dielectric filter.

Abstract: A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.