Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Abstract: A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).

Abstract: For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

Abstract: An optoelectronic component (100) comprises a first semiconductor layer stack (101), which has an active layer (110) designed for the emission of radiation and a main area (111). A separating layer (103) is arranged on said main area, said separating layer forming a semitransparent mirror. The optoelectronic component comprises a second semiconductor layer stack (102), which is arranged at the separating layer and which has a further active layer (120) designed for the emission of radiation.

Abstract: At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.

Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Abstract: A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places.

Abstract: A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

Abstract: A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Abstract: Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (?1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (?2) by absorption of the radiation of the first wavelength in the barrier layer structure.