Patents by Inventor Berthold Hahn

Berthold Hahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-emitting semiconductor device and fabric
    Patent number: 11296265
    Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: April 5, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Martin Rudolf Behringer, Alexander F. Pfeuffer, Andreas Plößl, Georg Bogner, Berthold Hahn, Frank Singer
  • µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
    Publication number: 20220102583
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Application
    Filed: January 29, 2020
    Publication date: March 31, 2022
    Inventors: Thorsten BAUMHEINRICH, Martin BEHRINGER, Andreas BIEBERSDORF, Ruth BOSS, Michael BRANDL, Peter BRICK, Jean-Jacques DROLET, Hubert HALBRITTER, Laura KREINER, Erwin LANG, Andreas LEBER, Tobias MEYER, Alexander PFEUFFER, Marc PHILIPPENS, Jens RICHTER, Thomas SCHWARZ, Paul TA, Tansen VARGHESE, Xue WANG, Sebastian WITTMANN, Julia STOLZ, Karsten DIEKMANN, Karl ENGL, Siegfried HERRMANN, Berthold HAHN, Stefan ILLEK, Bruno JENTZSCH, Korbinian PERZLMAIER, Ines PIETZONKA, Andreas RAUSCH, Kilian REGAU, Tilman RUEGHEIMER, Simon SCHWALENBERG, Christopher SOELL, Peter STAUSS, Petrus SUNDGREN, Hoa VU, Christopher WIESMANN, Georg BOGNER, Patrick HOERNER, Christoph KLEMP, Jens MUELLER, Kerstin NEVELING, Jong PARK, Christine RAFAEL, Frank SINGER, Kanishk CHAND, Felix FEIX, Christian MUELLER, Eva-Maria RUMMEL, Nicole HEITZER, Marie ASSMANN, Christian BERGER, Ana KANEVCE
  • Radiation-emitting semiconductor device and fabric
    Patent number: 11264550
    Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: March 1, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Martin Rudolf Behringer, Alexander F. Pfeuffer, Andreas Plößl, Georg Bogner, Berthold Hahn, Frank Singer
  • ENHANCED LIGHT OUTCOUPLING OF MICRO-LEDS USING PLASMONIC SCATTERING OF METALLIC NANOPARTICLES
    Publication number: 20220059740
    Abstract: A micro-light emitting diode (micro-LED) including a substrate, a mesa structure including a plurality of semiconductor layers formed on the substrate, and an insulation material layer on sidewalls of the mesa structure. The mesa structure includes a light emitting region configured to emit light of a first wavelength. The insulation material layer includes a transparent insulating material and metal nanoparticles immersed in the transparent insulating material. The transparent insulating material and the metal nanoparticles are configured to cause plasmonic scattering of the light of the first wavelength back into the mesa structure, such that the light of the first wavelength may be randomized in the mesa structure, thereby improving the light extraction efficiency and external quantum efficiency of the micro-LED.
    Type: Application
    Filed: August 21, 2020
    Publication date: February 24, 2022
    Inventor: Berthold HAHN
  • OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING FIRST CONNECTION REGIONS, AND OPTOELECTRONIC DEVICE
    Publication number: 20210408351
    Abstract: An optoelectronic semiconductor component having an optoelectronic semiconductor chip for emitting electromagnetic radiation. The optoelectronic semiconductor chip may have a first semiconductor layer, a second semiconductor layer, first and second current spreading layers, electrical connection elements and first connection regions. The first current spreading layer is arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The first current spreading layer is electrically connected to the first semiconductor layer. The electrical connection elements electrically connect the second semiconductor layer to the second current spreading layer. The first connection regions are connected to the first current spreading layer and extend through the second current spreading layer.
    Type: Application
    Filed: November 14, 2019
    Publication date: December 30, 2021
    Inventors: Ivar Tangring, Berthold Hahn
  • HIGH-EFFICIENCY RED MICRO-LED WITH LOCALIZED CURRENT APERTURE
    Publication number: 20210376194
    Abstract: A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.
    Type: Application
    Filed: June 2, 2020
    Publication date: December 2, 2021
    Inventors: Berthold Hahn, Thomas Lauermann, Markus Broell
  • µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
    Publication number: 20210104574
    Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 8, 2021
    Inventors: Martin BEHRINGER, Andreas BIEBERSDORF, Ruth BOSS, Erwin LANG, Tobias MEYER, Alexander PFEUFFER, Marc PHILIPPENS, Julia STOLZ, Tansen VARGHESE, Sebastian WITTMANN, Siegfried HERRMANN, Berthold HAHN, Bruno JENTZSCH, Korbinian PERZLMAIER, Peter STAUSS, Petrus SUNDGREN, Jens MUELLER, Kerstin NEVELING, Frank SINGER, Christian MUELLER
  • OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT
    Publication number: 20210050490
    Abstract: An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.
    Type: Application
    Filed: February 11, 2019
    Publication date: February 18, 2021
    Inventors: Isabel Otto, Holger Klassen, Berthold Hahn
  • Optoelectronic component with ESD protection
    Patent number: 10680135
    Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ?Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: June 9, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Berthold Hahn, Korbinian Perzlmaier, Christian Leirer, Anna Kasprzak-Zablocka
  • SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
    Publication number: 20200168767
    Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.
    Type: Application
    Filed: May 17, 2018
    Publication date: May 28, 2020
    Inventors: Isabel OTTO, Anna KASPRZAK-ZABLOCKA, Christian LEIRER, Berthold HAHN
  • SEMICONDUCTOR LASER
    Publication number: 20200136348
    Abstract: A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 ?.
    Type: Application
    Filed: April 13, 2018
    Publication date: April 30, 2020
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Roland Heinrich ENZMANN, Andreas WOJCIK, Hubert HALBRITTER, Martin Rudolf BEHRINGER, Josip MARIC, Mariel Grace JAMA, Berthold HAHN, Christian MÜLLER, Isabel OTTO
  • Radiation-Emitting Semiconductor Device and Fabric
    Publication number: 20200127181
    Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
    Type: Application
    Filed: April 18, 2018
    Publication date: April 23, 2020
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Rudolf Behringer, Alexander F. Pfeuffer, Andreas Plößl, Georg Bogner, Berthold Hahn
  • Component and method of producing components
    Patent number: 10535806
    Abstract: A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: January 14, 2020
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Leirer, Korbinian Perzlmaier, Anna Kasprzak-Zablocka, Berthold Hahn, Thomas Schwarz
  • Method of producing optoelectronic semiconductor chips
    Patent number: 10411155
    Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: September 10, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Lorenzo Zini, Alexander Frey, Joachim Hertkorn, Berthold Hahn
  • Optoelectronic semiconductor chip with built-in ESD protection
    Patent number: 10121775
    Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: November 6, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Leirer, Berthold Hahn, Karl Engl, Johannes Baur, Siegfried Herrmann, Andreas Ploessl, Simeon Katz, Tobias Meyer, Lorenzo Zini, Markus Maute
  • OPTOELECTRONIC COMPONENT
    Publication number: 20180315891
    Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ?Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting.
    Type: Application
    Filed: October 24, 2016
    Publication date: November 1, 2018
    Inventors: Berthold HAHN, Korbinian PERZLMAIER, Christian LEIRER, Anna KASPRZAK-ZABLOCKA
  • COMPONENT AND METHOD OF PRODUCING COMPONENTS
    Publication number: 20180212121
    Abstract: A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.
    Type: Application
    Filed: July 11, 2016
    Publication date: July 26, 2018
    Inventors: Christian Leirer, Korbinian Perzlmaier, Anna Kasprzak-Zablocka, Berthold Hahn, Thomas Schwarz
  • Composite substrate, semiconductor chip having a composite substrate and method for producing composite substrates and semiconductor chips
    Patent number: 9997671
    Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: June 12, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Johannes Baur, Berthold Hahn, Volker Haerle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
  • Optoelectronic semiconductor chip and optoelectronic module
    Patent number: 9947847
    Abstract: An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: April 17, 2018
    Assignee: OSRAM Opto Semiconductor GmbH
    Inventors: Berthold Hahn, Johannes Baur
  • Optoelectronic semiconductor chip and optoelectronic component
    Patent number: 9853018
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: December 26, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Leirer, Berthold Hahn, Roland Zeisel, Johannes Baur, Karl Engl