Abstract: A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes groups of magnetic tunnel junctions, where the magnetic tunnel junctions in each group are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The apparatus further includes a first conductive layer including conductive interconnects, a second conductive layer including straps, and a third conductive layer including field lines, each field line configured to generate a magnetic field for configuring an operating point of a corresponding subset of the magnetic tunnel junctions in each group based on a current flow through each field line. The magnetic tunnel junctions in each group are disposed between and connected to a corresponding one of the conductive interconnects and a corresponding one of the straps. The second conductive layer is disposed between the first conductive layer and the third conductive layer.

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and (2) the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, where the impedance of a subset of the plurality of rows in each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract: An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, wherein impedance of one or more of the magnetic tunnel junctions in each of the plurality of rows of each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

Abstract: An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: A check engine includes comparators, where each comparator has flash cells. Each comparator is configured to store at least one reference bit included in a set of reference bits defining a first pattern. Each comparator also includes an input for presenting at least one target bit included in a set of target bits defining a second pattern. Each comparator is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit. The check engine is configured such that the outputs of the comparators are combined to produce a combined output that is compared to a reference signal to determine whether there is a match between the first pattern and the second pattern.

Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on a first analog input to the circuit. Each MTJ is electrically connected to a first and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of the MTJs varies based on the magnetic field. The circuit is configured to mix the first analog input and a second analog input to generate an analog output based on the output of the second output terminal.

Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction.

Abstract: A check engine includes a plurality of comparators each including a first directional characteristic aligned to store at least one reference bit included in a set of reference bits, and a second directional characteristic aligned to present at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit, based on a relative alignment between the first directional characteristic and the second directional characteristic. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

Abstract: A check engine includes a plurality of comparators each including a first directional characteristic aligned to store at least one reference bit included in a set of reference bits, and a second directional characteristic aligned to present at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit, based on a relative alignment between the first directional characteristic and the second directional characteristic. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

Abstract: A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract: An apparatus includes a circuit and a field line. The circuit includes a magnetic tunnel junction including a storage layer and a sense layer. The field line is configured to generate a magnetic field based on an input signal, where the magnetic tunnel junction is configured such that a magnetization direction of the sense layer and a resistance of the magnetic tunnel junction vary based on the magnetic field. The circuit is configured to amplify the input signal to generate an output signal that varies in response to the resistance of the magnetic tunnel junction.