Patents by Inventor Bhaskar Jyoti Bhuyan

Bhaskar Jyoti Bhuyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164745
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: November 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20210280420
    Abstract: Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO2), copper (Cu), and low-k dielectric materials.
    Type: Application
    Filed: March 3, 2020
    Publication date: September 9, 2021
    Applicants: Applied Materials, Inc., National university of Singapore
    Inventors: Bhaskar Jyoti Bhuyan, Andrea Leoncini
  • Publication number: 20210277516
    Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 9, 2021
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Ahbijit Basu Mallick, Eugene Yu Jin Kong, Bo Qi
  • Publication number: 20210217610
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Application
    Filed: March 9, 2021
    Publication date: July 15, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Publication number: 20210215664
    Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 15, 2021
    Inventors: Mark J. SALY, Keenan Navarre WOODS, Joseph R. JOHNSON, Bhaskar Jyoti BHUYAN, William J. DURAND, Michael CHUDZIK, Raghav SREENIVASAN, Roger QUON
  • Publication number: 20210189562
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
    Type: Application
    Filed: February 23, 2021
    Publication date: June 24, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
  • Patent number: 11028477
    Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
  • Publication number: 20210134593
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Application
    Filed: January 12, 2021
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Patent number: 10985014
    Abstract: Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: April 20, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20210111033
    Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.
    Type: Application
    Filed: October 10, 2019
    Publication date: April 15, 2021
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Mikhail Korolik, Paul E. Gee, Bhaskar Jyoti Bhuyan, John Sudijono, Doreen Wei Ying Yong, Kah Wee Ang, Debanjan Jana, Niharendu Mahapatra
  • Patent number: 10957532
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Patent number: 10943780
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: March 9, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Publication number: 20210062341
    Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) or general formula (II) wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor; exposing the substrate to an oxidant; and purging the processing chamber of the oxidant.
    Type: Application
    Filed: August 26, 2019
    Publication date: March 4, 2021
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20210028004
    Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
    Type: Application
    Filed: October 12, 2020
    Publication date: January 28, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
  • Patent number: 10892157
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 12, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Publication number: 20200332415
    Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.
    Type: Application
    Filed: August 6, 2018
    Publication date: October 22, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Zhelin Sun, Ning Li, Mihaela Balseanu, Li-Qun Xia, Yijun Liu, Lin Yang
  • Patent number: 10804094
    Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: October 13, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
  • Publication number: 20200234950
    Abstract: Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.
    Type: Application
    Filed: July 17, 2018
    Publication date: July 23, 2020
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20200234943
    Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.
    Type: Application
    Filed: July 17, 2018
    Publication date: July 23, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Knisley