Patents by Inventor Bhaskar Jyoti Bhuyan

Bhaskar Jyoti Bhuyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9911591
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: March 6, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20170323775
    Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
    Type: Application
    Filed: April 13, 2017
    Publication date: November 9, 2017
    Inventors: Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
  • Publication number: 20170213726
    Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.
    Type: Application
    Filed: January 24, 2017
    Publication date: July 27, 2017
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan, Jeffrey W. Anthis, Feng Q. Liu, David Thompson
  • Publication number: 20170114459
    Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 27, 2017
    Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
  • Publication number: 20160322213
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Application
    Filed: April 29, 2016
    Publication date: November 3, 2016
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Patent number: 9234274
    Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes are provided. The metal complexes comprise thiophene, pyrrole or salen-based ligands. A substrate surface may be contacted with a vapor phase metal coordination complex such that a layer is formed on the surface comprising the metal coordination complex bound to the surface by the metal. The bound metal complex may then be contacted with a reducing gas such that an exchange reaction occurs between the bound metal coordination complex and the reducing gas, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate. The process can be repeated for additional layers.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: January 12, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Anshita Gairola
  • Publication number: 20150125605
    Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes are provided. The metal complexes comprise thiophene, pyrrole or salen-based ligands. A substrate surface may be contacted with a vapor phase metal coordination complex such that a layer is formed on the surface comprising the metal coordination complex bound to the surface by the metal. The bound metal complex may then be contacted with a reducing gas such that an exchange reaction occurs between the bound metal coordination complex and the reducing gas, thereby dissociating the bound metal complex and producing a first layer of elemental metal on the surface of the substrate. The process can be repeated for additional layers.
    Type: Application
    Filed: November 7, 2013
    Publication date: May 7, 2015
    Inventors: Bhaskar Jyoti Bhuyan, Anshita Gairola