Patents by Inventor Bhaskar Jyoti Bhuyan

Bhaskar Jyoti Bhuyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804094
    Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: October 13, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
  • Publication number: 20200234943
    Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.
    Type: Application
    Filed: July 17, 2018
    Publication date: July 23, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Knisley
  • Publication number: 20200234950
    Abstract: Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.
    Type: Application
    Filed: July 17, 2018
    Publication date: July 23, 2020
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20200216949
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.
    Type: Application
    Filed: September 19, 2018
    Publication date: July 9, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Lakmal C. Kalutarage, Rana Howlader
  • Patent number: 10699897
    Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: June 30, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan, Jeffrey W. Anthis, Feng Q. Liu, David Thompson
  • Publication number: 20200168453
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.
    Type: Application
    Filed: August 1, 2018
    Publication date: May 28, 2020
    Inventors: Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20200149158
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.
    Type: Application
    Filed: January 10, 2020
    Publication date: May 14, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Muthukumar Kaliappan, Michael Haverty, Aaron Dangerfield, Stephen Weeks, Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20200090924
    Abstract: Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.
    Type: Application
    Filed: September 14, 2018
    Publication date: March 19, 2020
    Inventors: Liqi Wu, Hung Nguyen, Bhaskar Jyoti Bhuyan, Mark Saly, Feng Q. Liu, David Thompson
  • Publication number: 20200010954
    Abstract: Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20200006064
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Application
    Filed: September 11, 2019
    Publication date: January 2, 2020
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Patent number: 10453678
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20190316256
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 17, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
  • Publication number: 20190309412
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Cong Trinh, Mihaela Balseanu, Lakmal C. Kalutarage
  • Publication number: 20190198318
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 27, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Publication number: 20190157067
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.
    Type: Application
    Filed: November 19, 2018
    Publication date: May 23, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Li-Qun Xia
  • Patent number: 10219373
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: February 26, 2019
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20180301333
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Application
    Filed: April 12, 2018
    Publication date: October 18, 2018
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Publication number: 20180199432
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Patent number: 9911591
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: March 6, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: David Thompson, Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20170323775
    Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
    Type: Application
    Filed: April 13, 2017
    Publication date: November 9, 2017
    Inventors: Mark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan